用扫描电子显微镜(SEM)、原子力显微镜(AFM)等表面分析方法,考察了反应烧结碳化硅(RBSC)材料在纯氧气中的氧化行为. 结果表明, 反应烧结SiC(RBSC)表面残余Si比 α-SiC拥有更多的缺陷, 初期氧化速率更快.表面粗糙度的变化在一定程度上也反映了氧化发生的过程. 结合氧化动力学、SEM及AFM,建立了RBSC初期氧化过程的生长模型. 提供表面三维信息的AFM和分析成分与形貌信息的SEM技术是研究表面氧化过程尤其是初期氧化十分方便有效的工具.
The peculiarities of oxidation behavior of reaction-bonded silicon carbide (RBSC) in pure oxygen have been studied by means of surface technologies, such as scanning electron microscopy (SEM) and atomic force microscopy (AFM). The results showed that in centrast with α-SiC, residual Si on the RBSC surface possesses a higher density of defects which in turn might cause faster oxidation rate in the initial oxidation stage. The variation of the root mean square (RMS) roughness Rq of RBSC was closely related with its oxidation process. Based on the results of oxidation kinetics measurement coupled with SEM and AFM examinations, a model was presented to describe the initial oxidation process of RBSC. The results also indicated that it is possible to use SEM and AFM to reveal the feature of initial oxidation behavior of materials such as SiC etc.