贺志勇
,
赵晋香
,
高原
中国腐蚀与防护学报
采用双层辉光离子渗金属技术在20钢上进行镍铬共渗处理，对合金元素的溅射和吸收这两个渗金属过程，从放电及溅射等理论角度并结合试验结果进行了分析讨论。结果表明，放电条件对渗层形成效率有很大影响，合金元素的利用率在不同的放电参数下会有悬殊的变化。溅射量决定于溅射电压与气压，利用率则受工件偏压、气压、极间距的共同控制。在一定的溅射量下，利用率的高低决定了渗层质量及形成效率。提高合金元素的利用率是工艺参数选择的最重要目标。
关键词:
辉光放电
,
sputtering
,
surface alloying
王福会
,
楼翰一
,
吴维■
金属学报
用溅射方法获得了晶粒尺寸小于 0.5μm的微晶Co-30Cr-5Al涂层,并对正常晶粒的CoCrAl合金及其微晶溅射层的1000℃抗循环氧化性能进行了研究。用扫描电镜和声发射技术研究了微晶化对CoCrAl合金表面氧化膜粘附性的影响。结果表明:正常晶粒的 CoCrAl合金经1次循环氧化,初生氧化膜即出现剥落,继而表面生成了氧化铬,而氧化铬的保护性远比氧化铝差;而微晶 CoCrAl涂层经100次循环,表面氧化铝膜仍完好无损。声发射测量结果表明,微晶涂层比正常晶粒的合金具有更高的抗表面氧化膜剥落的能力。
关键词:
微晶CoCrAl涂层
,
cyclic oxidation
,
sputtering
Bangjie XIA+
,
Hanyi LOU
,
Lixin ZHANG
,
Corrosion Science Laboratory
,
Institute of Corrosion and Protection of Metals
,
Academia Sinica
,
Shenyang
,
110015
,
China
材料科学技术（英）
The morphology and microstructure of magnetron sputtered coating of superalloy K38G on cast al- loy K38G have been investigated by means of SEM, TEM and XRD. The results indicate that the sputtered coating is identical to the substrate in chemical composition but it is composed only of γ phase without γ'. The sputtered superalloy coating presents columnar structure and the grain size is in the range of 20-100 nm. There are a great number of planar defects such as stacking faults and microtwins in the coating. The morphology and microstructure of the sputtered coating may have close relation to the remarkable increase of oxidation resistance of the coating.
关键词:
sputtering
,
null
,
null
H.S.San
金属学报(英文版)
Transparent conducting oxides Cdln2O4 thin films were prepared by radio-frequency reactive sputtering from a Cd-ln aUoy target in Ar+O2 atmosphere. By transmission spectrum and Hall measurement for different samples prepared at different substrate temperatures, it could be found that the carrier concentration would increase with the decrease of substrate temperature, but absorption edge showed an abrupt variation from a blue shift to a red shift. TheoreticaUy, the paper formulated the effect of high-density point defects on band structures; it embodied the formation of band tailing, Burstein-Moss shift and band-gap narrowing. The density of holes will influence the magnitude of optical band gap and transmittance of light. Since extrapolation method does not fit degenerate semiconductor materials, a more accurate method of obtaining optical band gap is curve fitting. In addition, ionized impurities scattering is the main damping mechanism of the free electrons in Cdln2O4 films, the density of ionized impurities induced by altering substrate temperature will affect the carriers mobility.
关键词:
sputtering
,
null
,
null
WANG Fuhui LOU Hanyi WU Weitao Corrosion Science Laboratory
,
Institute of Corrosion and Protection of Metals
,
Academia Sinica
,
Shenyang
,
China Research Assistant
,
Institute of Corrosion and Protection of Metals
,
Academia Sinica
,
Shenyang 110015
,
China
金属学报(英文版)
An investigation was carried out of the resistance to cyclic oxidation of the as-cast normal-grained Co-30Cr-5Al alloy substrate at 1000℃ in air together with its sputtered coating of microcrystallized CoCrAl alloy grains sized less than 0.5μm.Acoustie emissi on counts showed that the initially formed Al_2O_3 scale on the bare alloy substrate cracked and spalled severely off after only one or two cycles on cooling and then the worse protective layer of Cr_2O_3 and CoCr_2O_4 spinel occurred on surface.While such substrate coated with sputtered microcrystallized CoCrAl alloy film was not damaged under oxidation even through 100 cycles at 1000℃.In comparison with the normal-grained alloy,the microcrystallized al- loy,coating of similar constitution exhibite excellent resistance to oxide spalling on surface.
关键词:
microcrystallized CoCrAl coating
,
null
,
null
X.F.Rong and Z.Y.Qin College of Mechanical Engineering
,
Taiyuan University of Technology
,
Taiyuan 030024
,
China
金属学报(英文版)
In this paper, a deposition feature of a SiC:H films deposited by a RF sputtering system and a effect on the hardness of the films with various deposition conditions are investigated, and the effects of the silicon on a C:H are studied. It follows from the results that the properties of hardness can be changed with the depositing conditions. An increase of silane in the gas phase allows to deposit a SiC:H having tetrahedral structure. The sets of deposition conditions by which the different types of a SiC:H films can be deposited are obtained.
关键词:
a SiC:H film
,
null
,
null
Q.C. Tian
,
J.S. Wu
金属学报(英文版)
Ti-Pd-Ni thin films were prepared by sputter deposition at room temperature. The asdeposited thin films were crystallized at 750°C followed by various cooling conditions,and the structural change emerged in the films was characterized by means of both X-ray diffraction (XRD) and differiantial scanning calorimetry (DSC). It was found that the phase transformation temperatures of Ti50.6Pd30Ni19.4 ingot are much higher than those of its thin film. The B19' and B19 phases coexisted, together with the Ti2Ni and Ti2Pd type of precipitates at the room temperature. Both the B19-B2 onestage and the B19'-B19-B2 two-stage phase transformations took place when the films experienced thermal change across the region of phase transformation temperatures.
关键词:
Ti-Pd-Ni
,
null
,
null
