{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"目的：研究硅片经雾化施液抛光技术加工后存在的<span style=\"color:red\">位</span><span style=\"color:red\">错</span>缺陷。方法应用化学<span style=\"color:red\">腐蚀</span>法、光学方法分析硅片不同部位的<span style=\"color:red\">位</span><span style=\"color:red\">错</span><span style=\"color:red\">腐蚀</span>形貌、<span style=\"color:red\">位</span><span style=\"color:red\">错</span>密度及其分布,通过单因素实验研究雾化参数对位<span style=\"color:red\">错</span>形貌和<span style=\"color:red\">位</span><span style=\"color:red\">错</span>密度的影响规律。在相同的工艺参数下,和传统抛光进行对比实验。结果雾化抛光硅片的平均<span style=\"color:red\">位</span><span style=\"color:red\">错</span>密度为1.2×104/cm2,边沿处的<span style=\"color:red\">位</span><span style=\"color:red\">错</span>密度小于其他区域。在相同的工艺参数下,雾化施液CMP的抛光液消耗量约为传统CMP的1/10,但硅片的<span style=\"color:red\">位</span><span style=\"color:red\">错</span><span style=\"color:red\">腐蚀</span>形貌和<span style=\"color:red\">位</span><span style=\"color:red\">错</span>密度明显好于传统抛光,且蚀<span style=\"color:red\">坑</span>分布均匀分散,没有出现<span style=\"color:red\">位</span><span style=\"color:red\">错</span>排等严重缺陷。通过增大雾化器的出雾量能有效改善硅片表层的<span style=\"color:red\">位</span><span style=\"color:red\">错</span>缺陷。结论相对于传统抛光,雾化施液抛光技术能更加高效地去除硅片的<span style=\"color:red\">位</span><span style=\"color:red\">错</span>缺陷。","authors":[{"authorName":"壮筱凯","id":"9ab4d71a-530f-44e4-8cfc-6334902b6c31","originalAuthorName":"壮筱凯"},{"authorName":"李庆忠","id":"cd98ac45-35a7-404f-b38a-325911e19741","originalAuthorName":"李庆忠"}],"doi":"10.16490/j.cnki.issn.1001-3660.2015.05.024","fpage":"129","id":"d66d3758-b985-42b9-9200-0bbb8a773e48","issue":"5","journal":{"abbrevTitle":"BMJS","coverImgSrc":"journal/img/cover/BMJS.jpg","id":"3","issnPpub":"1001-3660","publisherId":"BMJS","title":"表面技术   "},"keywords":[{"id":"4c646564-94fd-457a-b51f-aaa3dd10d670","keyword":"雾化施液","originalKeyword":"雾化施液"},{"id":"2fb1ee8b-8a76-4962-9fef-cce3663f2b33","keyword":"硅片","originalKeyword":"硅片"},{"id":"924ac415-416a-43f4-8cf5-65bc3c96f445","keyword":"<span style=\"color:red\">位</span><span style=\"color:red\">错</span><span style=\"color:red\">腐蚀</span><span style=\"color:red\">坑</span>","originalKeyword":"位错腐蚀坑"},{"id":"27584d23-3331-4a4d-826b-52f8a2975395","keyword":"传统抛光","originalKeyword":"传统抛光"},{"id":"34d1daf6-b786-4425-a2db-dc96dc266aee","keyword":"雾化参数","originalKeyword":"雾化参数"}],"language":"zh","publisherId":"bmjs201505024","title":"雾化施液抛光硅片<span style=\"color:red\">位</span><span style=\"color:red\">错</span>的化学<span style=\"color:red\">腐蚀</span>形貌分析","volume":"","year":"2015"},{"abstractinfo":"用Everson<span style=\"color:red\">腐蚀</span>剂对CdZnTe晶体(111)B和(211)B面上的<span style=\"color:red\">位</span><span style=\"color:red\">错</span>进行了<span style=\"color:red\">腐蚀</span>和观察,发现(111)B面上的<span style=\"color:red\">腐蚀</span><span style=\"color:red\">坑</span>密度(EPD)值明显高于(211)B面上的EPD值,(111)B面上的EPD值与双晶衍射半峰宽有明显的依赖关系,(111)B面上的FWHM值随EPD的增加而增加.而(211)B面上的EPD则与材料的双晶衍射半峰宽无关.研究结果表明,用Everson<span style=\"color:red\">腐蚀</span>剂得到的EPD参数依赖于材料的晶体取向,在两种常用的晶体学取向中,(111)B面上得到的EPD能较为正确的反映CdZnTe材料中的<span style=\"color:red\">位</span><span style=\"color:red\">错</span>密度.","authors":[{"authorName":"顾惠明","id":"22365c16-376a-4f1e-96db-ec56ac263d6b","originalAuthorName":"顾惠明"},{"authorName":"杨建荣","id":"4c74ceba-8c1f-48b9-87ed-f89b142ae3bc","originalAuthorName":"杨建荣"},{"authorName":"陈新强","id":"2fd290e5-1ec7-459b-b4aa-d0147bb11855","originalAuthorName":"陈新强"},{"authorName":"何力","id":"1e42b070-c7ba-4a76-bebc-458b55fc6b15","originalAuthorName":"何力"}],"doi":"10.3969/j.issn.1000-985X.1999.02.012","fpage":"172","id":"0142735d-6635-4999-ada7-7be7e9b522f0","issue":"2","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"b56d6d6f-931c-44b6-9314-79ebf702c52d","keyword":"CdZnTe","originalKeyword":"CdZnTe"},{"id":"dc800d72-dcf4-45d3-ab07-6870e48b44bc","keyword":"<span style=\"color:red\">位</span><span style=\"color:red\">错</span>","originalKeyword":"位错"},{"id":"14116e65-4bec-46cb-8a99-3f0b509dfb92","keyword":"<span style=\"color:red\">腐蚀</span>法","originalKeyword":"腐蚀法"},{"id":"f4b937a8-0b84-4d8e-b99b-d6ab69793805","keyword":"布里奇曼法","originalKeyword":"布里奇曼法"},{"id":"0683d7d2-8d1d-4b7b-b7a7-368ff4f7ced6","keyword":"衬底材料","originalKeyword":"衬底材料"}],"language":"zh","publisherId":"rgjtxb98199902012","title":"CdZnTe材料(111)B和(211)B面上位<span style=\"color:red\">错</span><span style=\"color:red\">腐蚀</span><span style=\"color:red\">坑</span>密度的差异","volume":"28","year":"1999"},{"abstractinfo":"实验目的在于解决GaN外延层中六方形<span style=\"color:red\">腐蚀</span><span style=\"color:red\">坑</span>起源问题存在的分歧,并利用<span style=\"color:red\">腐蚀</span>法准确地估计GaN的<span style=\"color:red\">位</span><span style=\"color:red\">错</span>密度.大量对熔融KOH<span style=\"color:red\">腐蚀</span>GaN过程中表面形貌的演化以及温度和时间对<span style=\"color:red\">腐蚀</span>结果影响的实验结果表明,<span style=\"color:red\">位</span><span style=\"color:red\">错</span>类型与<span style=\"color:red\">腐蚀</span><span style=\"color:red\">坑</span>三维形状相对应,而与<span style=\"color:red\">腐蚀</span><span style=\"color:red\">坑</span>大小无关,极性是GaN不同种类<span style=\"color:red\">位</span><span style=\"color:red\">错</span>的<span style=\"color:red\">腐蚀</span><span style=\"color:red\">坑</span>具有不同形状的决定性因素.使所有缺陷都显示出来所需的<span style=\"color:red\">腐蚀</span>温度和时间呈反比关系.<span style=\"color:red\">腐蚀</span>法估算GaN<span style=\"color:red\">位</span><span style=\"color:red\">错</span>密度的准确性取决于优化的<span style=\"color:red\">腐蚀</span>条件和合理的微观观测方法.","authors":[{"authorName":"高志远","id":"caa63ffd-83a1-4af4-999b-f0ddd3613a24","originalAuthorName":"高志远"},{"authorName":"郝跃","id":"ff052e77-4c25-4f45-ac9b-6ae6f6c17b67","originalAuthorName":"郝跃"},{"authorName":"张进城","id":"8d8beee7-5831-4521-9a18-25667d54e1d6","originalAuthorName":"张进城"},{"authorName":"张金凤","id":"93a29aec-e3ea-4821-a3ed-a86022cc3e36","originalAuthorName":"张金凤"},{"authorName":"倪金玉","id":"4d04134c-6f67-48e1-b169-4605d7f30568","originalAuthorName":"倪金玉"}],"doi":"10.3969/j.issn.1007-4252.2008.04.003","fpage":"742","id":"f4481f04-529b-41eb-b019-da24a58d7e50","issue":"4","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"49a75e27-a2e9-4277-9491-db4007230e08","keyword":"<span style=\"color:red\">位</span><span style=\"color:red\">错</span>密度","originalKeyword":"位错密度"},{"id":"72514575-ba99-4c13-a6e4-cfc3d06c27ba","keyword":"GaN","originalKeyword":"GaN"},{"id":"54eae27d-6388-41fc-bc6f-f933fc1cdd4b","keyword":"<span style=\"color:red\">腐蚀</span><span style=\"color:red\">坑</span>密度","originalKeyword":"腐蚀坑密度"},{"id":"ea770096-6b47-4ed7-84cd-c3d98985a8c0","keyword":"<span style=\"color:red\">腐蚀</span>机制","originalKeyword":"腐蚀机制"}],"language":"zh","publisherId":"gnclyqjxb200804003","title":"KOH热湿<span style=\"color:red\">腐蚀</span>法准确估算GaN的<span style=\"color:red\">位</span><span style=\"color:red\">错</span>密度","volume":"14","year":"2008"},{"abstractinfo":"利用扫描电镜(SEM)及能谱(EDS)技术研究激光晶体缺陷,给出了经<span style=\"color:red\">腐蚀</span>过后Nd: YAG晶体表面<span style=\"color:red\">位</span><span style=\"color:red\">错</span>蚀<span style=\"color:red\">坑</span>的清晰图片和元素分布定量信息,同时进行了对比实验,并对实验结果进行了分析.结果表明:Nd: YAG晶体位<span style=\"color:red\">错</span><span style=\"color:red\">腐蚀</span><span style=\"color:red\">坑</span>呈三角锥状,<span style=\"color:red\">腐蚀</span><span style=\"color:red\">坑</span>杂质元素分布较多,主要元素含量偏离晶体完整区成份;<span style=\"color:red\">位</span><span style=\"color:red\">错</span><span style=\"color:red\">腐蚀</span><span style=\"color:red\">坑</span>稀疏区与密堆区元素分布及含量不同.并讨论了<span style=\"color:red\">位</span><span style=\"color:red\">错</span>成因.","authors":[{"authorName":"权纪亮","id":"08d273fe-e3e3-45f4-bc53-ac172d850140","originalAuthorName":"权纪亮"},{"authorName":"谢致薇","id":"72b48e03-feb3-465d-8f22-7ed8d17c470b","originalAuthorName":"谢致薇"},{"authorName":"杨元政","id":"f4e7e0a2-985d-4f13-9a32-17530f27dd36","originalAuthorName":"杨元政"},{"authorName":"陈先朝","id":"995c41e0-f74f-4971-83bb-ad86184631c7","originalAuthorName":"陈先朝"},{"authorName":"李文涛","id":"8aa78c4b-f10a-4b2e-85a8-01ddcfeb02e2","originalAuthorName":"李文涛"},{"authorName":"刘了","id":"34725471-7405-4705-9757-1597ad6c6227","originalAuthorName":"刘了"},{"authorName":"武南平","id":"c5ee52ac-2f6b-4f40-b19e-4d9eb4db027f","originalAuthorName":"武南平"}],"doi":"","fpage":"1004","id":"f753e939-0caf-4082-a051-c3d83c08dd1b","issue":"4","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"3fa6932d-2a9c-4456-866c-15ec669440de","keyword":"扫描电镜","originalKeyword":"扫描电镜"},{"id":"27b170d1-4bf1-42b8-aa38-8482bb87d3b2","keyword":"能谱","originalKeyword":"能谱"},{"id":"671afc28-6daf-4191-8ee3-8d16f8361e4c","keyword":"激光晶体","originalKeyword":"激光晶体"},{"id":"183bb641-00b1-48a9-9b48-c4b247284aba","keyword":"<span style=\"color:red\">位</span><span style=\"color:red\">错</span>","originalKeyword":"位错"}],"language":"zh","publisherId":"rgjtxb98200904042","title":"激光晶体位<span style=\"color:red\">错</span>蚀<span style=\"color:red\">坑</span>的SEM研究","volume":"38","year":"2009"},{"abstractinfo":"利用扫描电镜电子通道衬度技术(SEM--ECC)和透射电子显微镜(TEM)对[013]取向Cu单\n晶体在空气中和NaCl水溶液中疲劳到饱和的<span style=\"color:red\">位</span><span style=\"color:red\">错</span>结构进行观察. 结果表明: 在0.5mol/L NaCl 水溶液中, <span style=\"color:red\">腐蚀</span>疲劳饱和<span style=\"color:red\">位</span><span style=\"color:red\">错</span>结构主要是迷宫和脉络<span style=\"color:red\">位</span><span style=\"color:red\">错</span>结构, 这与空气中的驻留滑移带 (PSBs)和脉络<span style=\"color:red\">位</span><span style=\"color:red\">错</span>结构不同. <span style=\"color:red\">腐蚀</span>疲劳饱和<span style=\"color:red\">位</span><span style=\"color:red\">错</span>结构的观察表明, 介质对疲劳<span style=\"color:red\">位</span><span style=\"color:red\">错</span>结构的影响相当于在其它条件都不变的情况下, 增大了疲劳的塑性切应变幅.","authors":[{"authorName":"杨继红","id":"a2a29e7d-13f9-4bec-a825-f6d73eeb9d72","originalAuthorName":"杨继红"},{"authorName":"贾维平","id":"d7f55cfc-7af9-4535-adf8-411872114247","originalAuthorName":"贾维平"},{"authorName":"李守新","id":"861aa1b2-f327-49aa-a716-07c7aedf7b31","originalAuthorName":"李守新"}],"categoryName":"|","doi":"","fpage":"99","id":"870cc576-0b4a-49dd-bd78-8ce5436683f6","issue":"1","journal":{"abbrevTitle":"JSXB","coverImgSrc":"journal/img/cover/JSXB.jpg","id":"48","issnPpub":"0412-1961","publisherId":"JSXB","title":"金属学报"},"keywords":[{"id":"5597a13c-d836-43b6-a42a-449baeea9286","keyword":"Cu单晶体","originalKeyword":"Cu单晶体"},{"id":"53300e1b-14c1-481b-94b0-52f8bad8b6b6","keyword":"corrosion fatigue","originalKeyword":"corrosion fatigue"}],"language":"zh","publisherId":"0412-1961_2004_1_4","title":"[013]取向Cu单晶体在NaCl水溶液中<span style=\"color:red\">腐蚀</span>疲劳<span style=\"color:red\">位</span><span style=\"color:red\">错</span>结构的观察","volume":"40","year":"2004"},{"abstractinfo":"利用扫描电镜电子通道衬度技术(SEM-ECC)和透射电子显微镜(TEM)对[013]取向Cu单晶体在空气中和NaCl水溶液中疲劳到饱和的<span style=\"color:red\">位</span><span style=\"color:red\">错</span>结构进行观察.结果表明:在0.5 mol/L NaCl水溶液中,<span style=\"color:red\">腐蚀</span>疲劳饱和<span style=\"color:red\">位</span><span style=\"color:red\">错</span>结构主要是迷宫和脉络<span style=\"color:red\">位</span><span style=\"color:red\">错</span>结构,这与空气中的驻留滑移带(PSBs)和脉络<span style=\"color:red\">位</span><span style=\"color:red\">错</span>结构不同.<span style=\"color:red\">腐蚀</span>疲劳饱和<span style=\"color:red\">位</span><span style=\"color:red\">错</span>结构的观察表明,介质对疲劳<span style=\"color:red\">位</span><span style=\"color:red\">错</span>结构的影响相当于在其它条件都不变的情况下,增大了疲劳的塑性切应变幅.","authors":[{"authorName":"杨继红","id":"155d6aeb-b040-463e-9ab2-39a05239ef26","originalAuthorName":"杨继红"},{"authorName":"贾维平","id":"1c85ff02-d768-434a-964e-4feda7b211cd","originalAuthorName":"贾维平"},{"authorName":"李守新","id":"a5e1ea52-fbf7-45d8-978b-eacb6fa862c9","originalAuthorName":"李守新"},{"authorName":"柯伟","id":"b086ab9b-ee62-4eba-a239-ca73026c07da","originalAuthorName":"柯伟"}],"doi":"10.3321/j.issn:0412-1961.2004.01.019","fpage":"99","id":"d68b5259-8b22-498b-b769-a4080e2c94cd","issue":"1","journal":{"abbrevTitle":"JSXB","coverImgSrc":"journal/img/cover/JSXB.jpg","id":"48","issnPpub":"0412-1961","publisherId":"JSXB","title":"金属学报"},"keywords":[{"id":"70fde4df-a6be-4382-8073-6c140213e0c6","keyword":"Cu单晶体","originalKeyword":"Cu单晶体"},{"id":"d1dc4048-7831-4959-bc88-b162adc1c1b0","keyword":"<span style=\"color:red\">腐蚀</span>疲劳","originalKeyword":"腐蚀疲劳"},{"id":"729193c3-3198-4a9e-9aa3-df88cbc1565f","keyword":"<span style=\"color:red\">位</span><span style=\"color:red\">错</span>微结构","originalKeyword":"位错微结构"}],"language":"zh","publisherId":"jsxb200401019","title":"[013]取向Cu单晶体在NaCl水溶液中<span style=\"color:red\">腐蚀</span>疲劳<span style=\"color:red\">位</span><span style=\"color:red\">错</span>结构的观察","volume":"40","year":"2004"},{"abstractinfo":"通过扫描电镜、扫描探针显微镜和电子背散射衍射仪对改进的Chen法<span style=\"color:red\">腐蚀</span>液在Hg3In2Te6(111)晶片上形成的<span style=\"color:red\">腐蚀</span><span style=\"color:red\">坑</span>进行了研究.实验发现,<span style=\"color:red\">腐蚀</span><span style=\"color:red\">坑</span>形貌主要有线形、梭形、枣形3种,且后两者的沟槽在(111)面的投影只有3种取向,并互成120°夹角.进一步分析的结果表明,上述蚀<span style=\"color:red\">坑</span>的形成可由螺<span style=\"color:red\">位</span><span style=\"color:red\">错</span>双交滑移的模型加以解释.","authors":[{"authorName":"罗林","id":"3881960f-fcb8-496b-b098-63491b72669b","originalAuthorName":"罗林"},{"authorName":"介万奇","id":"e6263e11-c1da-4d8c-ac24-861631bf10aa","originalAuthorName":"介万奇"},{"authorName":"孙叶","id":"0b386230-0ac4-48bc-9ef6-7d8105ac80d1","originalAuthorName":"孙叶"},{"authorName":"王涛","id":"3c91a0a6-d69a-4344-9ece-b5d49b47436f","originalAuthorName":"王涛"},{"authorName":"傅莉","id":"2577cca3-73e7-4b8a-9483-d97615f7386c","originalAuthorName":"傅莉"}],"doi":"","fpage":"1853","id":"c0320a1b-7415-4853-8f0d-ef10e97c48b1","issue":"10","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"9771c68c-f572-42c0-b81d-24c2ea5936fb","keyword":"碲铟汞","originalKeyword":"碲铟汞"},{"id":"1e4bcb3f-ac54-4ff5-b8b8-d3cee5def6af","keyword":"<span style=\"color:red\">腐蚀</span><span style=\"color:red\">坑</span>","originalKeyword":"腐蚀坑"},{"id":"f2ae46f9-d591-4856-88fd-6b2481366352","keyword":"<span style=\"color:red\">位</span><span style=\"color:red\">错</span>","originalKeyword":"位错"},{"id":"d65a6191-2d2e-4746-a22e-e003f08dde85","keyword":"电子背散射衍射","originalKeyword":"电子背散射衍射"},{"id":"1e18e74d-8a7a-459c-9060-b726e916638e","keyword":"双交滑移","originalKeyword":"双交滑移"}],"language":"zh","publisherId":"gncl201010051","title":"碲铟汞(111)晶面<span style=\"color:red\">腐蚀</span><span style=\"color:red\">坑</span>的研究","volume":"41","year":"2010"},{"abstractinfo":"采用化学<span style=\"color:red\">腐蚀</span>法研究Nd∶YAG晶体位<span style=\"color:red\">错</span>.研究发现,<span style=\"color:red\">腐蚀</span>剂、<span style=\"color:red\">腐蚀</span>温度以及<span style=\"color:red\">腐蚀</span>时间对位<span style=\"color:red\">错</span>的显示都有影响.浓磷酸<span style=\"color:red\">腐蚀</span>剂在220 ℃下<span style=\"color:red\">腐蚀</span>20 min时,显示的<span style=\"color:red\">位</span><span style=\"color:red\">错</span>最为清晰.蚀<span style=\"color:red\">坑</span>形状为菱形,经过计算,<span style=\"color:red\">位</span><span style=\"color:red\">错</span>密度大约为10~3 cm~(-2).同一种<span style=\"color:red\">腐蚀</span>剂在不同的<span style=\"color:red\">腐蚀</span>时间所形成的<span style=\"color:red\">位</span><span style=\"color:red\">错</span>蚀<span style=\"color:red\">坑</span>大小和形貌是不同的.同时发现在样品的边缘有<span style=\"color:red\">位</span><span style=\"color:red\">错</span>塞积群.","authors":[{"authorName":"孙晶","id":"a5f13933-3a83-4876-95ee-1f8967deadb7","originalAuthorName":"孙晶"},{"authorName":"李昌立","id":"4ccabeb0-bd64-47a8-a75d-3e01e53cb0bf","originalAuthorName":"李昌立"},{"authorName":"于文生","id":"061b80c7-c544-4c17-8069-602b4a5b6bf9","originalAuthorName":"于文生"},{"authorName":"李四海","id":"812daab2-c2b2-4681-8e24-7bda70ed80cf","originalAuthorName":"李四海"},{"authorName":"张大龙","id":"eb6963d6-7799-4701-9b1d-d89836e62378","originalAuthorName":"张大龙"},{"authorName":"刘景和","id":"68520266-c068-40e5-af40-aa5f153b2520","originalAuthorName":"刘景和"}],"doi":"","fpage":"1320","id":"ab7468a9-4c1e-4d3a-aff9-6fb4dc6cb3d1","issue":"6","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"5f565337-5686-4c2c-bb10-722d63b9ea2a","keyword":"Nd:YAG","originalKeyword":"Nd:YAG"},{"id":"a5878b74-7aef-4d9d-9488-e8f5cfd6144c","keyword":"化学<span style=\"color:red\">腐蚀</span>","originalKeyword":"化学腐蚀"},{"id":"4898f244-9a0f-4121-8c0c-8ad8a3d69ef4","keyword":"<span style=\"color:red\">位</span><span style=\"color:red\">错</span>","originalKeyword":"位错"}],"language":"zh","publisherId":"rgjtxb98200906005","title":"化学<span style=\"color:red\">腐蚀</span>法研究Nd:YAG晶体位<span style=\"color:red\">错</span>","volume":"38","year":"2009"},{"abstractinfo":"研究了Ａ５３７低合金钢在３．５％ＮａＣｌ活化体系的低周<span style=\"color:red\">腐蚀</span>疲劳近表面的微观<span style=\"color:red\">位</span><span style=\"color:red\">错</span>行为，特别是在不同的极化电位条件的<span style=\"color:red\">位</span><span style=\"color:red\">错</span>结构．结果表明，在Ａ５３７／３．５％ＮａＣｌ活化体系中，当样品在相同应变幅条件加载直至断裂后，近表面的<span style=\"color:red\">位</span><span style=\"color:red\">错</span>结构在－５８０ｍＶ阳极极化和－１２００ｍＶ强阴极极化条件，均为墙结构；而在－８００ｍＶ阴极保护条件下，为胞结构．","authors":[{"authorName":"王俭秋","id":"34a60a56-7cb7-47f8-8a81-ca52259b1fb9","originalAuthorName":"王俭秋"},{"authorName":"李劲","id":"f7011109-9dd3-4389-b276-d3b0fb358ccc","originalAuthorName":"李劲"},{"authorName":"柯伟","id":"29c7b29e-5180-487e-9bd4-de71c62cde92","originalAuthorName":"柯伟"}],"categoryName":"|","doi":"","fpage":"730","id":"2b7da669-0b9c-4b80-93fb-ba0163100054","issue":"7","journal":{"abbrevTitle":"JSXB","coverImgSrc":"journal/img/cover/JSXB.jpg","id":"48","issnPpub":"0412-1961","publisherId":"JSXB","title":"金属学报"},"keywords":[{"id":"569cb523-b859-41ab-9b4b-f6399e31f003","keyword":"Ａ５３７钢","originalKeyword":"Ａ５３７钢"},{"id":"755ddb6d-ac73-4d4a-abe4-74652e48be8a","keyword":" low cycle fatigue","originalKeyword":" low cycle fatigue"},{"id":"b4444839-3b37-4855-8cff-f7fe3842ff6e","keyword":" anodic polarization","originalKeyword":" anodic polarization"},{"id":"d2cf5264-dcdd-49ce-9232-e726f847b454","keyword":" cathodic polarization","originalKeyword":" cathodic polarization"},{"id":"5b2561e0-aa1c-4fcf-a5e2-d37825c37e78","keyword":"cathodic protection","originalKeyword":"cathodic protection"},{"id":"dd66a12d-7c65-43f3-82e9-8d0a2ec33698","keyword":" dislocation wall","originalKeyword":" dislocation wall"},{"id":"1d723264-605b-4b2b-b7bc-619b30b84842","keyword":" dislocation cell.","originalKeyword":" dislocation cell."}],"language":"zh","publisherId":"0412-1961_1996_7_3","title":"极化对A537钢低周<span style=\"color:red\">腐蚀</span>疲劳的近表面微观<span style=\"color:red\">位</span><span style=\"color:red\">错</span>行为的影响","volume":"32","year":"1996"},{"abstractinfo":"阐述了Thomas-Fermi-Dirac-Cheng电子理论的<span style=\"color:red\">位</span><span style=\"color:red\">错</span>形成机制. 通过对系统总能量的分析提出了<span style=\"color:red\">位</span><span style=\"color:red\">错</span>能够存在的判据, 计算给出多种单质材料<span style=\"color:red\">位</span><span style=\"color:red\">错</span>存在的极限尺寸值.","authors":[{"authorName":"程开甲","id":"9875b592-1c07-4edf-8545-85a17f72917e","originalAuthorName":"程开甲"},{"authorName":"程漱玉","id":"16455dd9-cf2a-4ffc-a670-6ddc05a07890","originalAuthorName":"程漱玉"}],"doi":"","fpage":"81","id":"c5a68e38-834c-44b1-9bf9-1d18c35dffe9","issue":"2","journal":{"abbrevTitle":"XYJSCLYGC","coverImgSrc":"journal/img/cover/XYJSCLYGC.jpg","id":"69","issnPpub":"1002-185X","publisherId":"XYJSCLYGC","title":"稀有金属材料与工程"},"keywords":[{"id":"6adb403a-a239-4021-a342-386a28046e41","keyword":"<span style=\"color:red\">位</span><span style=\"color:red\">错</span>","originalKeyword":"位错"},{"id":"38edc98f-54bc-49bf-b851-8027c1cb56ce","keyword":"Thomas-Fermi-Dirac-Cheng","originalKeyword":"Thomas-Fermi-Dirac-Cheng"},{"id":"cd6a8c41-dd59-4b0d-813c-51be6183d5b1","keyword":"极限尺寸","originalKeyword":"极限尺寸"}],"language":"zh","publisherId":"xyjsclygc200202001","title":"论<span style=\"color:red\">位</span><span style=\"color:red\">错</span>的稳定存在","volume":"31","year":"2002"}],"totalpage":2397,"totalrecord":23965}