{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"采用盐法制备了掺铝氧化锌(ZAO)纳米粉体.通过复合晶体-(NH4)1.95(Zn0.95Al0.05)(SO4)2·6H2O的合成证实了反应初始溶液中形成了络离子.通过改变(NH4)2SO4的加入量研究了络离子浓度对ZAO粒径的影响.通过XRD、SEM和激光粒度仪对ZAO粉体进行了表征.结果表明:络离子的存在,降低了反应初始溶液中游离金属离子的浓度,使得产物的一次粒径的可调控性增强,有利于纳米级ZAO粉体的制备.","authors":[{"authorName":"颜东亮","id":"7dd7e162-ba6c-4bcc-8625-23cae318259e","originalAuthorName":"颜东亮"},{"authorName":"陈林","id":"47042798-46d4-47b5-9b87-f04412123810","originalAuthorName":"陈林"},{"authorName":"宋杰光","id":"5baba83c-800e-4599-8b59-3074de5c2d85","originalAuthorName":"宋杰光"}],"doi":"","fpage":"704","id":"3b6374e3-0227-44f0-808a-9b0daded7793","issue":"3","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"aadec31b-5932-467e-b6cf-05dcacfeb98b","keyword":"掺铝氧化锌(ZAO)","originalKeyword":"掺铝氧化锌(ZAO)"},{"id":"547d0db7-8c7a-463d-93ce-4eb2af902352","keyword":"盐法","originalKeyword":"络盐法"},{"id":"c6cc09c9-0ae9-4691-bb59-badab01a2900","keyword":"复合晶体","originalKeyword":"新复合络盐晶体"},{"id":"0934b60d-d227-448c-ac1b-1c8bcf5f0250","keyword":"(NH4)1.95(Zn0.95Al0.05)(SO4)2-6H2O","originalKeyword":"(NH4)1.95(Zn0.95Al0.05)(SO4)2-6H2O"}],"language":"zh","publisherId":"rgjtxb98201103031","title":"络离子浓度对掺铝氧化锌(ZAO)纳米粉体粒径的影响","volume":"40","year":"2011"},{"abstractinfo":"在采用本实验室提出的盐法制备氧化铟锡(Indium-tin-oxide,简称ITO)纳米粉末的试验过程中发现和制备了一种络合晶体--K3[InCl6].通过XRD、SEM和CCD等测试手段对其物相、形貌、元素成份和结构进行了表征.结果表明:该晶体属单斜晶系,空间群为P21/c,分子式为K3[InCl6],Z=4,其晶胞参数为:a=1.2188nm,b=0.7553nm,c=1.2703nm,α=90.00°,β=108.96°,γ= 90.00°,V=110.598nm3.","authors":[{"authorName":"陈林","id":"e4d02663-26ec-44b0-8291-37780403cc38","originalAuthorName":"陈林"},{"authorName":"吴伯麟","id":"3ff3076c-ca3b-4eca-9ddf-f4cbfef5e9f4","originalAuthorName":"吴伯麟"},{"authorName":"贺孝一","id":"4955809c-04d8-46b6-83ff-76c156d90cf4","originalAuthorName":"贺孝一"}],"doi":"10.3969/j.issn.1000-985X.2006.02.048","fpage":"420","id":"ce0dc04f-b54d-4eff-ac23-d62a4bcb1832","issue":"2","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"b2ee2603-f056-4656-8433-0743b2af8f6a","keyword":"络合晶体","originalKeyword":"络合盐晶体"},{"id":"4e06a50a-664a-4638-8c66-588cd170ebc5","keyword":"K3[InCl6]","originalKeyword":"K3[InCl6]"},{"id":"7ff7d3e2-7310-4518-beb1-783465d19d96","keyword":"合成","originalKeyword":"合成"}],"language":"zh","publisherId":"rgjtxb98200602048","title":"一种络合晶体--K3[InCl6]的合成","volume":"35","year":"2006"},{"abstractinfo":"针对电力系统复合绝缘子污秽闪产生的危害问题,提出了开展污秽闪特性研究的重要性,研究了Nacl(密ESDD)一定的情况下,不同水泥污秽(灰密NSDD)对复合绝缘子污秽闪特性的影响,研究结果表明:灰密对绝缘子人工污秽闪电压也是有影响的,闪电压与灰密成幂函数关系,并且灰密对闪电压的影响是独立的.","authors":[{"authorName":"李志玮","id":"9eb27283-4ed1-4b95-973b-72b949047477","originalAuthorName":"李志玮"},{"authorName":"周瑜","id":"b3f3b0a4-2f82-40dd-be20-b8bc36aa53bc","originalAuthorName":"周瑜"},{"authorName":"姚欢","id":"fd7eb37b-e817-492d-89d5-e97cb15969ed","originalAuthorName":"姚欢"},{"authorName":"冯亦佳","id":"cab44c3f-e901-49e6-a5b9-4518328692c1","originalAuthorName":"冯亦佳"}],"doi":"10.3969/j.issn.1009-9239.2009.05.011","fpage":"45","id":"c6ccba44-6bd5-43ef-a5c3-2eb3763b7ce9","issue":"5","journal":{"abbrevTitle":"JYCL","coverImgSrc":"journal/img/cover/JYCL.jpg","id":"50","issnPpub":"1009-9239","publisherId":"JYCL","title":"绝缘材料"},"keywords":[{"id":"e90603a9-8fa9-49a9-9c05-528644d7af78","keyword":"复合绝缘子","originalKeyword":"复合绝缘子"},{"id":"d268123a-aa1e-43ea-8c2e-ff2a07fc1163","keyword":"水泥","originalKeyword":"水泥"},{"id":"1690969a-9608-4892-8258-b49faac67d0d","keyword":"人工污秽试验","originalKeyword":"人工污秽试验"},{"id":"e59cf8a2-176f-4925-b33b-631b4e8d5b3b","keyword":"污秽闪","originalKeyword":"污秽闪络"}],"language":"zh","publisherId":"jycltx200905011","title":"水泥污秽对复合绝缘子污秽闪特性的影响研究","volume":"42","year":"2009"},{"abstractinfo":"针对电力系统绝缘子污秽闪产生的危害问题,采用升压法对涂污秽物的单片瓷绝缘子(XP-210)进行人工污秽试验,分析了不同密(NaCl)、灰密(硅藻土)对单片瓷绝缘子闪电压的影响.结果表明:密、灰密对单片瓷绝缘子人工污秽闪电压都有影响,闪电压与密、灰密均成幂函数关系,并且二者对闪电压的影响是独立的.据此提出了划分电网污秽等级的建议.","authors":[{"authorName":"周瑜","id":"dca8b7d3-b6e6-4612-913d-4b7d57225de4","originalAuthorName":"周瑜"},{"authorName":"李军","id":"1e8e574b-5371-4804-9ee8-39a065294351","originalAuthorName":"李军"},{"authorName":"张仲秋","id":"09611d94-f696-4b01-8d90-1add5c9049d1","originalAuthorName":"张仲秋"},{"authorName":"吴童生","id":"8fc66475-13ad-40da-b774-ba9240eec8ce","originalAuthorName":"吴童生"},{"authorName":"李志玮","id":"8c19e0f5-205a-4f01-88a7-0b98d7ed2950","originalAuthorName":"李志玮"}],"doi":"10.3969/j.issn.1009-9239.2009.06.015","fpage":"58","id":"bf755c32-ce82-441e-81ce-98506060b29e","issue":"6","journal":{"abbrevTitle":"JYCL","coverImgSrc":"journal/img/cover/JYCL.jpg","id":"50","issnPpub":"1009-9239","publisherId":"JYCL","title":"绝缘材料"},"keywords":[{"id":"bfad1c67-cf8d-4bfa-b9cd-8b1bda614391","keyword":"瓷绝缘子","originalKeyword":"瓷绝缘子"},{"id":"c482a285-77be-4fb2-a07b-b25361277eaa","keyword":"密","originalKeyword":"盐密"},{"id":"33d9d8e7-11bc-47ec-ac8f-5b6e2eb80a59","keyword":"灰密","originalKeyword":"灰密"},{"id":"54873295-4611-4946-9fcb-55e54d81c2d4","keyword":"人工污秽试验","originalKeyword":"人工污秽试验"},{"id":"d2a4966e-d117-4ae1-b6be-04af6001ea45","keyword":"污秽闪","originalKeyword":"污秽闪络"}],"language":"zh","publisherId":"jycltx200906015","title":"不同密灰密对瓷绝缘子污秽闪特性影响的研究","volume":"42","year":"2009"},{"abstractinfo":"研究了磷酸盐类晶体中的阴离子[PO4]-和[CaP6O24]16-晶体中的结晶方位,与[ClCa6]11+八面体相互联结的稳定性决定了各个面族的生长速率.根据磷灰石各族晶面显露的习性,提出了采用人工生长的磷灰石做人工关节时,应该注意磷灰石的取向问题.平行于C轴方向生长的磷灰石有利于与人体骨骼的快速愈合.","authors":[{"authorName":"仲维卓","id":"e112d38d-e860-42e4-af16-27a14a69c0ba","originalAuthorName":"仲维卓"},{"authorName":"罗豪","id":"adc3246a-961a-4c0c-bf38-2757f1c2fd46","originalAuthorName":"罗豪"},{"authorName":"黄宣威","id":"e5d35236-adf5-4c54-b860-490d13fc38df","originalAuthorName":"黄宣威"},{"authorName":"齐振一","id":"0f436525-b006-4242-9778-e1b35a320ffc","originalAuthorName":"齐振一"},{"authorName":"华素坤","id":"2eff1864-73e6-4647-b69a-acc861873b3f","originalAuthorName":"华素坤"}],"categoryName":"|","doi":"","fpage":"223","id":"c54e5202-0368-4d61-b245-8d24384b9de2","issue":"2","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"312d4ab2-fc26-43ea-a0b3-7aa61ec36a21","keyword":"晶体结构","originalKeyword":"晶体结构"},{"id":"7f43de72-0015-442d-b9bd-696b647324aa","keyword":"null","originalKeyword":"null"},{"id":"076476ed-022b-4093-8ee7-4742d3797982","keyword":"null","originalKeyword":"null"},{"id":"0258c7ba-2e8e-49ce-b37d-6c2180cc59b1","keyword":"null","originalKeyword":"null"}],"language":"zh","publisherId":"1000-324X_1999_2_1","title":"磷酸盐晶体阴离子结晶方位与晶体形态","volume":"14","year":"1999"},{"abstractinfo":"通过对福建某山区110 kV输电线路复合绝缘子的雷击闪事故进行调研分析,总结复合绝缘子遭雷击闪的原因主要有:干弧距离太短、均压环单端配置以及接地电阻超标.提出了在山区雷电多发地段使用加长型的合成绝缘子、安装双均压环以及降低杆塔接地电阻的防雷击闪措施,实践证明该措施对防止复合绝缘子的雷击闪起到了很好的效果.","authors":[{"authorName":"敬亮兵","id":"a8a000cb-7df2-4ec4-9b1c-59f467ac2047","originalAuthorName":"敬亮兵"},{"authorName":"李景禄","id":"98e7e744-1712-4d2b-b692-454b016f805c","originalAuthorName":"李景禄"},{"authorName":"颜喜平","id":"91f17e4f-d39e-49d5-b353-8afce0f542b4","originalAuthorName":"颜喜平"},{"authorName":"马福","id":"3b31c16a-8cd0-4ee6-a9aa-f22224c2987f","originalAuthorName":"马福"}],"doi":"10.3969/j.issn.1009-9239.2008.04.013","fpage":"46","id":"a7d35ec2-ca06-4a41-bd11-04d513bbf274","issue":"4","journal":{"abbrevTitle":"JYCL","coverImgSrc":"journal/img/cover/JYCL.jpg","id":"50","issnPpub":"1009-9239","publisherId":"JYCL","title":"绝缘材料"},"keywords":[{"id":"bfa8ec7f-5d21-4cdc-a8d0-155b7a90c6ff","keyword":"复合绝缘子","originalKeyword":"复合绝缘子"},{"id":"125946d7-cfd8-4c19-b0c1-1822b3bf0ffd","keyword":"雷击闪","originalKeyword":"雷击闪络"},{"id":"f236147c-7bb2-4b79-a276-8ece8e1bcf0d","keyword":"均压环","originalKeyword":"均压环"},{"id":"a57e99f7-01ef-4bc9-9b20-71c6e2911827","keyword":"接地电阻","originalKeyword":"接地电阻"}],"language":"zh","publisherId":"jycltx200804013","title":"复合绝缘子雷击闪事故的分析及对策","volume":"41","year":"2008"},{"abstractinfo":"为了探究复合绝缘子发生闪故障后的硅橡胶材料特性,以现场运行多年并发生闪故障的绝缘子为样品,利用紫外成像确定其损坏部位,运用Fourier红外光谱分析研究憎水性基团Si-CH3、-CH3的相对含量,并对样品进行憎水性测试、表面观察及芯棒剖析。结果表明:硅橡胶复合绝缘子发生闪故障后,憎水性几乎丧失,表面出现粉化、硬化及龟裂现象,表层憎水性基团的相对含量下降,芯棒的制作工艺对复合绝缘子的综合性能影响较大。","authors":[{"authorName":"黄成才","id":"abf275f1-e37f-49b0-8aac-1b6ad7f4dd14","originalAuthorName":"黄成才"},{"authorName":"李永刚","id":"845b868a-aec6-4f94-aeb6-bcd6bd117877","originalAuthorName":"李永刚"},{"authorName":"张志猛","id":"37b261fa-96b5-4296-a9b6-e96a1a413ac1","originalAuthorName":"张志猛"},{"authorName":"王庚森","id":"f9992747-040d-4cea-8b1d-ef84ebfbbd0f","originalAuthorName":"王庚森"}],"doi":"","fpage":"53","id":"73c270dd-0a0f-49a4-a80a-c2a631eb65e5","issue":"4","journal":{"abbrevTitle":"JYCL","coverImgSrc":"journal/img/cover/JYCL.jpg","id":"50","issnPpub":"1009-9239","publisherId":"JYCL","title":"绝缘材料"},"keywords":[{"id":"1d8cc94e-01f2-4e7a-8268-c2c8362a3b48","keyword":"复合绝缘子","originalKeyword":"复合绝缘子"},{"id":"ba3d0890-1452-4282-b522-e3ec77034555","keyword":"闪","originalKeyword":"闪络"},{"id":"dadcab42-251e-4da9-9958-ee583d5d9d41","keyword":"紫外成像","originalKeyword":"紫外成像"},{"id":"88d0ce9a-95d3-4b45-91cf-38305c3f46f3","keyword":"红外光谱","originalKeyword":"红外光谱"},{"id":"516668d4-3e55-4e5c-9a20-7c0754a3db14","keyword":"憎水性","originalKeyword":"憎水性"},{"id":"d2bd998a-9686-4097-840a-2a1159bca932","keyword":"芯棒","originalKeyword":"芯棒"}],"language":"zh","publisherId":"jycltx201404014","title":"复合绝缘子闪后的材料特性分析","volume":"","year":"2014"},{"abstractinfo":"研究了一维阶梯型函数光子晶体,给出色散关系和透射率的表达式,并与常规光子晶体比较,发现在常规光子晶体中加入缺陷层后,出现明显的缺陷模。而在阶梯型函数光子晶体中加入缺陷层后,缺陷模个数少且强度弱。进一步研究了带缺陷和不带缺陷的阶梯型函数光子晶体的光场分布。发现有缺陷层时,光场强度分布得到增强或者减弱,不同于常规光子晶体中的光强只局域增强。函数光子晶体的这些的特性对光子晶体的设计与应用具有重要的实际意义。","authors":[{"authorName":"王光怀","id":"90976906-c4a3-46bc-878d-d7566920a303","originalAuthorName":"王光怀"},{"authorName":"张斯淇","id":"65388c6c-18ac-4855-95fa-fc92fa1c9dca","originalAuthorName":"张斯淇"},{"authorName":"王婧","id":"6f74992b-5a58-4c5f-a537-9237ef9fa1c3","originalAuthorName":"王婧"},{"authorName":"吴向尧","id":"1f7fd3cc-770a-4e07-a030-6392e97cf0f4","originalAuthorName":"吴向尧"},{"authorName":"刘晓静","id":"8505f361-617a-46c7-99bb-0ad7a2588ba0","originalAuthorName":"刘晓静"},{"authorName":"巴诺","id":"fcecd5e1-9911-4a88-b3c7-43c0bce20524","originalAuthorName":"巴诺"},{"authorName":"李宏","id":"0b9a056c-4c7d-4d86-8949-0a7b150a9dc6","originalAuthorName":"李宏"},{"authorName":"李春红","id":"d8350358-5043-4689-be86-8b8f4f3647cd","originalAuthorName":"李春红"},{"authorName":"郭义庆","id":"a1f9609e-35ee-44b0-8a9d-d421d8ab3709","originalAuthorName":"郭义庆"},{"authorName":"吴义恒","id":"35172223-4f06-4f80-b088-fb4ded64c7d6","originalAuthorName":"吴义恒"}],"doi":"","fpage":"2463","id":"bf6332ef-4fa5-4b94-bd52-a5d181f5f216","issue":"18","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"8dfdc2a8-90ac-4275-8b63-e9e6cbaaeb05","keyword":"函数光子晶体","originalKeyword":"函数光子晶体"},{"id":"89d95970-cb06-408c-b225-bff76f30ec9e","keyword":"缺陷模","originalKeyword":"缺陷模"},{"id":"c03dcd95-dddb-4b92-9a19-6e98fcae25ce","keyword":"透射率","originalKeyword":"透射率"},{"id":"3ac009db-380a-4093-955f-1e417dfe3d9d","keyword":"光传输特性","originalKeyword":"光传输特性"}],"language":"zh","publisherId":"gncl201218009","title":"关于的阶梯型函数光子晶体的研究","volume":"43","year":"2012"},{"abstractinfo":"在反铁电晶体由顺电相至反铁电相的结构相变中,对称性所属点群也随之发生相应的改变.通过理论研究和对实验模型的分析,我们认为选择反极化参量P或子晶格的极化矢量PA、PB作为反铁电相的序参量是不合适的.本文提出选用轴矢量R作为序参量来描述反铁电相变中对称性的变化.","authors":[{"authorName":"韩代朝","id":"02ae5ee7-a1c2-4566-86b8-94040e39b0c5","originalAuthorName":"韩代朝"},{"authorName":"蔡玉平","id":"20aaca75-e4a4-4b3f-ab73-5e47b5428f84","originalAuthorName":"蔡玉平"},{"authorName":"马素敏","id":"b1fe0b5c-2d12-4e63-96a4-83cc51cec446","originalAuthorName":"马素敏"}],"doi":"","fpage":"3366","id":"88075c27-697d-4bd5-8993-2f0cbf8ce52f","issue":"z1","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"86a83fc7-18f3-4a9a-9074-bbcabd88122d","keyword":"反铁电相变","originalKeyword":"反铁电相变"},{"id":"6ba482df-9edb-4da6-a57e-e13fc8190290","keyword":"序参量","originalKeyword":"序参量"},{"id":"4be6c996-3547-4eb3-9723-a0fa58390c9d","keyword":"居里原理","originalKeyword":"居里原理"},{"id":"3df9d41f-ed29-4bc8-b77e-31168dc352d5","keyword":"轴矢量","originalKeyword":"轴矢量"}],"language":"zh","publisherId":"gncl2004z1945","title":"反铁电晶体结构相变的研究","volume":"35","year":"2004"},{"abstractinfo":"采用静态高压釜实验研究了NZ2合金在360℃,18.6 MPa含Li水和400℃,10.3 MPa蒸汽中的腐蚀动力学,通过X射线衍射法研究了NZ2合金在两种介质中腐蚀不同时间后氧化膜的晶体结构.结果表明:NZ2合金在360℃含Li水中腐蚀速率较400℃蒸汽中的低;随着腐蚀时间的延长,氧化膜中四方氧化锆含量逐渐降低,单斜氧化锆含量逐渐增高,四方氧化锆向单斜氧化锆转变.腐蚀转折时,氧化膜中出现了立方氧化锆,随后氧化膜中立方相含量明显增多,说明四方相向单斜相转变过程中,立方相是作为过渡相存在.氧化膜中四方相含量越高,腐蚀速率越低.","authors":[{"authorName":"章海霞","id":"a2d74c98-fa43-431b-be8e-19d55b825541","originalAuthorName":"章海霞"},{"authorName":"李中奎","id":"5ecbf16b-e5a8-4007-a207-effec473e74b","originalAuthorName":"李中奎"},{"authorName":"","id":"fc3cce17-d76c-4122-9f31-d541c295d07e","originalAuthorName":""},{"authorName":"张廷杰","id":"e6f75fee-09af-4700-9037-23bb7ed20741","originalAuthorName":"张廷杰"},{"authorName":"张建军","id":"c3636148-93a1-4473-9ef7-5a42d2db9e47","originalAuthorName":"张建军"},{"authorName":"周军","id":"9b4918f4-ee8b-48cf-a96f-14851dbd4cc9","originalAuthorName":"周军"},{"authorName":"周廉","id":"5568262d-20fc-4e57-97d1-5e53202e8ba1","originalAuthorName":"周廉"}],"doi":"","fpage":"1908","id":"edc44c78-a56a-441b-85c4-bc3046c40d77","issue":"12","journal":{"abbrevTitle":"XYJSCLYGC","coverImgSrc":"journal/img/cover/XYJSCLYGC.jpg","id":"69","issnPpub":"1002-185X","publisherId":"XYJSCLYGC","title":"稀有金属材料与工程"},"keywords":[{"id":"b126d618-de4a-4375-82ef-d7762b242840","keyword":"腐蚀","originalKeyword":"腐蚀"},{"id":"1446e4df-86c5-4cc2-b19e-1e93218ca6a0","keyword":"氧化膜","originalKeyword":"氧化膜"},{"id":"3037de93-fdba-4b7f-99e8-f8e5e6a94967","keyword":"晶体结构","originalKeyword":"晶体结构"},{"id":"6ac4d468-4be8-4d99-bfaa-aadff75e4ff3","keyword":"XRD分析","originalKeyword":"XRD分析"}],"language":"zh","publisherId":"xyjsclygc200612014","title":"锆合金氧化膜的晶体结构分析","volume":"35","year":"2006"}],"totalpage":5294,"totalrecord":52935}