Control of the electronic parameters on a novel metal-oxide-semiconductor (MOS) diode by indium doping incorporation is emphasized and investigated.The electronic parameters,such as ideality factor,barrier height (BH),series resistance,and charge carrier density are extracted from the current-voltage (I-V) and the capacitance-voltage (C-V) characteristics.The properties of the MOS diode based on 4％,6％ and 8％ indium doped tin oxide are largely studied.The Ag/SnO2/nSi/Au MOS diode is fabricated by spray pyrolysis route,at 300 ℃ from the In-doped SnO2 layer.This was grown onto n-type silicon and metallic (Au) contacts which were made by thermal evaporation under a vacuum@10-5 Torr and having a thickness of 120 nm and a diameter of 1 mm.Determined by the Cheung-Cheung approximation method,the series resistance increases (334-534 Ω) with the In doping level while the barrier height (BH) remains constant around 0.57 V.The Norde calculation technique gives a similar BH value of 0.69 V but the series resistance reaches higher values of 5500 Ω.The indium doping level influences on the characteristics of Ag/SnO2 ∶In/Si/Au MOS diode while the 4％ indium level causes the capacitance inversion and the device turns into p-type material.