{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"外延<span style=\"color:red\">硅</span>经过碳注入、氢气氛下高温退火和电化学腐蚀相继处理之后,发出位于431 nm左右的蓝色荧光峰.随电化学腐蚀条件的增强,蓝色荧光峰先变强后消失,并出现位于716 nm处的红光峰.样品中随碳注入而注入的杂质C=O复合体<span style=\"color:red\">镶嵌</span>在退火过程所形成的<span style=\"color:red\">纳米</span><span style=\"color:red\">硅</span>颗粒的表面,形成典型的<span style=\"color:red\">纳米</span><span style=\"color:red\">硅</span><span style=\"color:red\">镶嵌</span><span style=\"color:red\">结构</span>.正是这种<span style=\"color:red\">结构</span>导致了蓝光发射.","authors":[{"authorName":"王强","id":"0c3bdf8f-771c-4888-92bb-045a969803e4","originalAuthorName":"王强"},{"authorName":"李玉国","id":"be6fac7a-88b5-4d68-bb85-38bbf25ff046","originalAuthorName":"李玉国"},{"authorName":"石礼伟","id":"406eaf90-2b11-4991-84c5-ff3a5a46ed41","originalAuthorName":"石礼伟"},{"authorName":"薛成山","id":"c02ee86e-e405-459a-8e0d-b827bb3cd719","originalAuthorName":"薛成山"}],"doi":"","fpage":"256","id":"a7531619-48ad-411b-b41b-941f1d907f30","issue":"2","journal":{"abbrevTitle":"XYJSCLYGC","coverImgSrc":"journal/img/cover/XYJSCLYGC.jpg","id":"69","issnPpub":"1002-185X","publisherId":"XYJSCLYGC","title":"稀有金属材料与工程"},"keywords":[{"id":"190de5f3-dbe5-4d18-b6ca-ced46a510872","keyword":"碳注入","originalKeyword":"碳注入"},{"id":"b8cefd7c-a3cc-4f6c-8d6a-57ca8f3422e0","keyword":"氢退火","originalKeyword":"氢退火"},{"id":"718315c5-d66e-466b-9266-72c719fdc179","keyword":"电化学腐蚀","originalKeyword":"电化学腐蚀"},{"id":"8745007a-6587-492b-8c85-00e9ec2c3107","keyword":"<span style=\"color:red\">纳米</span><span style=\"color:red\">硅</span><span style=\"color:red\">镶嵌</span><span style=\"color:red\">结构</span>","originalKeyword":"纳米硅镶嵌结构"}],"language":"zh","publisherId":"xyjsclygc200502020","title":"氢退火注碳外延<span style=\"color:red\">硅</span>发光特性研究","volume":"34","year":"2005"},{"abstractinfo":"采用等离子体化学气相沉积(PECVD)技术在不同N2O流量条件下制备了<span style=\"color:red\">镶嵌</span>有<span style=\"color:red\">纳米</span>晶<span style=\"color:red\">硅</span>(nc-Si)的富<span style=\"color:red\">硅</span>氧化硅(SiOx)薄膜,利用透射电镜(TEM),X射线衍射分析(XRD),傅里叶变换红外(FTIR)和透射光谱技术研究了薄膜中的氢含量和氧含量变化及其对薄膜晶化度、薄膜键合<span style=\"color:red\">结构</span>和光吸收特性的影响.结果表明,薄膜由nc-Si粒子和非晶SiOx组成,为混合相<span style=\"color:red\">结构</span>.nc-Si的生长与氧化反应的竞争决定了薄膜微观<span style=\"color:red\">结构</span>、键合特性以及光吸收特性.随着N2O流量的增加,薄膜的晶粒尺寸逐渐减小.晶界区过渡晶<span style=\"color:red\">硅</span>的比例减少,晶粒界面随之消失,带隙呈持续增加趋势.该实验结果为nc-Si/SiOx薄膜在新型太阳电池中的应用提供了基础数据.","authors":[{"authorName":"梅艳","id":"f97e5715-dba7-48d4-8121-1aa26d40bf55","originalAuthorName":"梅艳"},{"authorName":"贾曦","id":"aa71acfd-d835-4a6e-b5c7-5b10173bf0b5","originalAuthorName":"贾曦"},{"authorName":"安彩虹","id":"4b4243a5-5476-494c-8abc-725599bde60a","originalAuthorName":"安彩虹"},{"authorName":"完继光","id":"a121d5ff-734b-41d8-8af1-58aafd6e312e","originalAuthorName":"完继光"},{"authorName":"徐艳梅","id":"cae05be3-8068-4ee7-af58-944561cca2d4","originalAuthorName":"徐艳梅"}],"doi":"10.14136/j.cnki.issn 1673-2812.2016.05.019","fpage":"776","id":"95efd4d7-cb0e-4802-bf7f-00a82dd31465","issue":"5","journal":{"abbrevTitle":"CLKXYGCXB","coverImgSrc":"journal/img/cover/CLKXYGCXB.jpg","id":"13","issnPpub":"1673-2812","publisherId":"CLKXYGCXB","title":"材料科学与工程学报"},"keywords":[{"id":"4a3890bc-7e74-4484-8b80-f373cef10d5c","keyword":"红外光谱","originalKeyword":"红外光谱"},{"id":"884d31e9-c94d-48a8-a561-cbbaabb98ff6","keyword":"<span style=\"color:red\">纳米</span>晶<span style=\"color:red\">硅</span>","originalKeyword":"纳米晶硅"},{"id":"12962213-5489-4632-b19d-3c8fc891ea3c","keyword":"氧化硅","originalKeyword":"氧化硅"},{"id":"116a8c21-4724-4bee-80ea-52dca6ba47a8","keyword":"键合<span style=\"color:red\">结构</span>","originalKeyword":"键合结构"}],"language":"zh","publisherId":"clkxygc201605019","title":"<span style=\"color:red\">镶嵌</span><span style=\"color:red\">纳米</span>晶<span style=\"color:red\">硅</span>的氧化硅薄膜微观<span style=\"color:red\">结构</span>调整及其光吸收特性","volume":"34","year":"2016"},{"abstractinfo":"<span style=\"color:red\">硅</span><span style=\"color:red\">纳米</span>晶材料显示出许多集成器件所需的性能,已倍受人们的关注,成为国内外研究的热点.本文对利用不同方法制备的<span style=\"color:red\">硅</span><span style=\"color:red\">纳米</span>晶的微观<span style=\"color:red\">结构</span>进行了综述,并对两种不同的发光机制进行了概述.人们在<span style=\"color:red\">硅</span><span style=\"color:red\">纳米</span>晶的制备和表征方面取得了较大的进展,但对<span style=\"color:red\">硅</span><span style=\"color:red\">纳米</span>晶的发光机制还未完全了解,有待进一步的研究.","authors":[{"authorName":"丁艳华","id":"e4d6d5a6-cd6b-477d-999d-7e726e2b10fb","originalAuthorName":"丁艳华"},{"authorName":"杜庆田","id":"df315d70-b263-4b08-8545-63362959a10e","originalAuthorName":"杜庆田"},{"authorName":"王乙潜","id":"a5df7ec6-d9f9-4af1-b11a-66807da1d083","originalAuthorName":"王乙潜"},{"authorName":"","id":"ba41accd-0d1f-496b-9fcc-46c91bfbf9c2","originalAuthorName":""}],"doi":"","fpage":"155","id":"9db4d844-64b6-4efc-af36-2613b5e31a93","issue":"1","journal":{"abbrevTitle":"CLKXYGCXB","coverImgSrc":"journal/img/cover/CLKXYGCXB.jpg","id":"13","issnPpub":"1673-2812","publisherId":"CLKXYGCXB","title":"材料科学与工程学报"},"keywords":[{"id":"190a164e-c5a4-427c-85f6-5953a1caf1ec","keyword":"<span style=\"color:red\">硅</span><span style=\"color:red\">纳米</span>晶","originalKeyword":"硅纳米晶"},{"id":"2a3493cc-f54d-413c-8af2-3f2990e53b03","keyword":"微观<span style=\"color:red\">结构</span>","originalKeyword":"微观结构"},{"id":"2494a45f-df09-4d7e-b8a5-5f81c5934113","keyword":"发光机理","originalKeyword":"发光机理"}],"language":"zh","publisherId":"clkxygc201101034","title":"<span style=\"color:red\">镶嵌</span>于基质中<span style=\"color:red\">硅</span><span style=\"color:red\">纳米</span>晶的微观<span style=\"color:red\">结构</span>及其发光机制研究进展","volume":"29","year":"2011"},{"abstractinfo":"采用射频磁控反应溅射法结合热退火处理技术制备<span style=\"color:red\">纳米</span><span style=\"color:red\">硅</span><span style=\"color:red\">镶嵌</span>氮化硅(nc-Si/SiNx)复合薄膜.通过X射线能谱(EDS)、红外光谱(IR)、X射线衍射(XRD)及紫外-可见吸收光谱(UV-vis)的测定,对薄膜进行了组分、键合状态、<span style=\"color:red\">结构</span>及光学带隙的表征.采用皮秒激光运用单光束Z扫描技术开展了对该复合薄膜的非线性光学性质的研究,测得其三阶非线性折射率系数和非线性光吸收系数分别为10-8esu和10-8m/W量级,并将薄膜这种三阶光学非线性增强的原因归因于量子限域效应.","authors":[{"authorName":"吕蓬","id":"f4a4c95a-bfda-4fd5-bc6a-60b2cb46711c","originalAuthorName":"吕蓬"},{"authorName":"郭亨群","id":"c3e79edd-d566-49ab-98f2-5d49ac1a87b3","originalAuthorName":"郭亨群"},{"authorName":"申继伟","id":"583e0622-ca3d-4a1d-9cdc-e419a272fba6","originalAuthorName":"申继伟"},{"authorName":"王启明","id":"10a7aa42-7c15-4489-90f0-7832a1f5cf52","originalAuthorName":"王启明"}],"doi":"","fpage":"44","id":"47e01e44-5d0f-4364-86bb-b9ad61f121e7","issue":"1","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"8c130ab9-a535-4882-bd27-bbdff712257b","keyword":"nc-Si/SiNx薄膜","originalKeyword":"nc-Si/SiNx薄膜"},{"id":"77042613-1561-4ae1-8efe-d9d4c2bd2ce1","keyword":"射频磁控反应溅射","originalKeyword":"射频磁控反应溅射"},{"id":"c81fb154-8d5a-4dd5-bf8d-8487a1df1e24","keyword":"光学非线性","originalKeyword":"光学非线性"},{"id":"e80e73f7-200f-49a4-9e1a-4b75b9f80103","keyword":"量子限域效应","originalKeyword":"量子限域效应"},{"id":"e0f55dec-01aa-4ba6-81ed-d610b3ca7f2e","keyword":"Z扫描","originalKeyword":"Z扫描"}],"language":"zh","publisherId":"gncl200801014","title":"<span style=\"color:red\">纳米</span><span style=\"color:red\">硅</span><span style=\"color:red\">镶嵌</span>氮化硅薄膜的制备及非线性光学性质研究","volume":"39","year":"2008"},{"abstractinfo":"自支撑<span style=\"color:red\">硅</span>氧碳<span style=\"color:red\">纳米</span><span style=\"color:red\">镶嵌</span>复合薄膜具有细小等轴β-SiC<span style=\"color:red\">纳米</span>晶弥散分布在非晶态相SiOxCy和游离碳基体的复合<span style=\"color:red\">结构</span>.利用电子顺磁共振谱(EPR)仪对900~1 200 ℃终烧薄膜复合<span style=\"color:red\">结构</span>中的氧空位形成进行分析;采用丝网印刷法在薄膜表面获得两条平行高温银浆电路层,并以其为散热基板进行LED器件板上芯片封装(COB).通过扫描电镜(SEM)与光学显微镜对薄膜微观形貌及封装<span style=\"color:red\">结构</span>进行观察,并通过LED热光参数测试仪对其结温进行探究.结果表明,终烧温度升高,薄膜氧空位浓度增大,g因子接近自由电子值2.0023.高温银浆导电层均匀致密保证良好电导效果.1 200 ℃终烧薄膜作为散热基板具有较好热传导与绝缘特性,其封装LED结温约为33.7 ℃,低于120 ℃限制,有望规模应用于大功率LED器件领域.","authors":[{"authorName":"杨敏","id":"d1e6fc2c-8a42-4327-a6ec-d2cf77c4414c","originalAuthorName":"杨敏"},{"authorName":"毛宇","id":"1ab0f516-da66-4ff7-82c8-4d762a80bc67","originalAuthorName":"毛宇"},{"authorName":"陈奋","id":"38007d6a-a5c5-43e8-b352-8f5b78f39f52","originalAuthorName":"陈奋"},{"authorName":"周瑞","id":"bf3f786f-b711-42f6-a07b-e760a3f86462","originalAuthorName":"周瑞"},{"authorName":"廖亮","id":"65a9dcd8-dde3-4392-b28b-75e2b9a8ad00","originalAuthorName":"廖亮"},{"authorName":"陈增","id":"04e33564-aae5-4723-9d0d-65fc6083a919","originalAuthorName":"陈增"},{"authorName":"刘乐雨","id":"8544d6ae-ea68-4d26-af7b-4f08eebbd596","originalAuthorName":"刘乐雨"},{"authorName":"姚荣迁","id":"52639e01-2eba-43c4-b3a0-49d93bcff6f8","originalAuthorName":"姚荣迁"}],"doi":"10.3969/j.issn.1001-9731.2017.06.036","fpage":"6199","id":"6d6cacf8-31c1-4bc6-abf0-5b9c09084bbc","issue":"6","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"b206f15f-7de0-4245-8e43-797a7d068794","keyword":"<span style=\"color:red\">硅</span>氧碳复合薄膜","originalKeyword":"硅氧碳复合薄膜"},{"id":"44dc5f1a-cad7-4525-9395-a96ed08d9bdc","keyword":"氧空位","originalKeyword":"氧空位"},{"id":"50a25703-7672-4717-9e38-2291d7f037a8","keyword":"基板","originalKeyword":"基板"},{"id":"da4dd6e8-3822-4378-8e4e-5ace60e072ed","keyword":"结温","originalKeyword":"结温"}],"language":"zh","publisherId":"gncl201706036","title":"<span style=\"color:red\">硅</span>氧碳<span style=\"color:red\">纳米</span><span style=\"color:red\">镶嵌</span>复合薄膜的氧空位形成与散热基板封装","volume":"48","year":"2017"},{"abstractinfo":"采用二氧化硅/碳化硅复合靶,用射频磁控共溅射技术和后高温退火的方法在Si(111)衬底上制备了碳化硅<span style=\"color:red\">纳米</span>颗粒/二氧化硅基质(nc-SiC/SiO2)<span style=\"color:red\">镶嵌</span><span style=\"color:red\">结构</span>薄膜材料,用X射线衍射(XRD),傅里叶红外吸收(FTIR),扫描电子显微镜(SEM)和光致发光(PL)实验分析了薄膜的微<span style=\"color:red\">结构</span>以及光致发光特性.结果表明:样品薄膜经高温退火后,部分无定形SiC发生晶化,形成β-SiC<span style=\"color:red\">纳米</span>颗粒而较均匀地<span style=\"color:red\">镶嵌</span>在SiO2基质中.以280nm波长光激发薄膜表面,有较强的365 nm的紫外光发射以及458 nm和490 nm处的蓝光发射,其发光强度随退火温度的升高显著增强,发光归结为薄膜中与Si-O相关的缺陷形成的发光中心.","authors":[{"authorName":"石礼伟","id":"e065fbc0-a5d8-4f8c-a51a-4f54e7c18560","originalAuthorName":"石礼伟"},{"authorName":"李玉国","id":"ed732f06-af01-47dd-a4fc-6752ebc29c79","originalAuthorName":"李玉国"},{"authorName":"王强","id":"555fc0d4-87af-431e-9afc-785e1f7131a6","originalAuthorName":"王强"},{"authorName":"薛成山","id":"989358d9-e519-4835-9418-f95a11783258","originalAuthorName":"薛成山"},{"authorName":"庄惠照","id":"d8badd09-d406-41bf-bcad-10f17f868efd","originalAuthorName":"庄惠照"}],"doi":"","fpage":"1073","id":"076de338-ff58-4297-8bc1-1cdd6b63c9bc","issue":"7","journal":{"abbrevTitle":"XYJSCLYGC","coverImgSrc":"journal/img/cover/XYJSCLYGC.jpg","id":"69","issnPpub":"1002-185X","publisherId":"XYJSCLYGC","title":"稀有金属材料与工程"},"keywords":[{"id":"474e240e-863e-44ff-9b7e-894ae23b9fb4","keyword":"磁控共溅射","originalKeyword":"磁控共溅射"},{"id":"68cc233c-ef20-4d43-9bd6-b82ba0df8280","keyword":"SiC<span style=\"color:red\">纳米</span>颗粒","originalKeyword":"SiC纳米颗粒"},{"id":"6f76d704-3d59-4b30-a923-4bedffd590a8","keyword":"微观<span style=\"color:red\">结构</span>","originalKeyword":"微观结构"},{"id":"6c5c8b3b-7053-4358-9d63-1f9fc2335b71","keyword":"光致发光","originalKeyword":"光致发光"}],"language":"zh","publisherId":"xyjsclygc200507018","title":"磁控共溅射SiC<span style=\"color:red\">纳米</span>颗粒/SiO2基质<span style=\"color:red\">镶嵌</span><span style=\"color:red\">结构</span>薄膜材料的微<span style=\"color:red\">结构</span>和光致发光特性","volume":"34","year":"2005"},{"abstractinfo":"采用射频磁控共溅射法制备了<span style=\"color:red\">纳米</span>GaAs-SiO2<span style=\"color:red\">镶嵌</span>复合薄膜.通过X射线衍射、透射电镜和X射线光电子能谱等手段研究了薄膜的<span style=\"color:red\">结构</span>及其与沉积时基片温度间的关系.结果表明:薄膜由晶态的GaAs及非晶SiO2组成,GaAs在沉积过程中未明显氧化,且以<span style=\"color:red\">纳米</span>颗位形式均匀地弥散在SiO2中;GaAs的平均粒径依赖于沉积时的基片温度获得了GaAs的平均位径为3～10nm的GaAs-SiO2<span style=\"color:red\">镶嵌</span>复合薄膜","authors":[{"authorName":"石旺舟","id":"454b90bb-ad71-405e-9ee6-0e425dec87ab","originalAuthorName":"石旺舟"},{"authorName":"林揆训","id":"11f77949-4703-4390-be59-c62e458e26df","originalAuthorName":"林揆训"},{"authorName":"林璇英","id":"420a96e0-bc0f-4b61-9dec-dc3eea336f87","originalAuthorName":"林璇英"}],"categoryName":"|","doi":"","fpage":"555","id":"8dedffb2-835b-40c1-b97b-2cf149b2846c","issue":"5","journal":{"abbrevTitle":"CLYJXB","coverImgSrc":"journal/img/cover/CLYJXB.jpg","id":"16","issnPpub":"1005-3093","publisherId":"CLYJXB","title":"材料研究学报"},"keywords":[{"id":"a44e6e6c-cbb4-49e4-9585-e1963dc78ffd","keyword":"薄膜制备","originalKeyword":"薄膜制备"},{"id":"dd969213-8919-4eb1-b2a6-76dfc59b84a8","keyword":" composite thin film","originalKeyword":" composite thin film"},{"id":"f65c106c-cb12-49a6-803e-0b16341998a2","keyword":" preparation","originalKeyword":" preparation"}],"language":"zh","publisherId":"1005-3093_1998_5_12","title":"<span style=\"color:red\">纳米</span>GaAs-SiO_2<span style=\"color:red\">镶嵌</span>复合薄膜的制备","volume":"12","year":"1998"},{"abstractinfo":"采用射频磁控溅射技术,在Ge<span style=\"color:red\">纳米</span><span style=\"color:red\">镶嵌</span>薄膜的基础上制备出电致发光器件.器件的<span style=\"color:red\">结构</span>为半透明Au膜/Ge<span style=\"color:red\">纳米</span><span style=\"color:red\">镶嵌</span>薄膜/P-Si基片.当正向偏压大于6V时,用内眼可以观察到可见的电致发光,但在反向偏压下探测不到光发射.所测电致发光谱中只有一个发光峰,峰位在510nm(2.4eV,绿光),并且随着正向偏压的升高,峰位不发生移动;对于不同温度退火的样品,峰位也保持不变.根据分析结果讨论了可能的电致发光机制.","authors":[{"authorName":"董业民","id":"68542637-0b89-448c-adc8-886654bc3ab7","originalAuthorName":"董业民"},{"authorName":"叶春暖","id":"38c19dc2-4a19-4457-838f-026b83d7158f","originalAuthorName":"叶春暖"},{"authorName":"汤乃云","id":"13c8428f-3706-4933-88f0-0a256b7425ae","originalAuthorName":"汤乃云"},{"authorName":"陈静","id":"636ebdc9-d3c3-42ef-bdf1-0736ee7dcf8d","originalAuthorName":"陈静"},{"authorName":"吴雪梅","id":"fea5c812-c333-4995-b8d7-19faf249ca96","originalAuthorName":"吴雪梅"},{"authorName":"诸葛兰剑","id":"9178ec9f-420d-4847-9248-32bd559a72b7","originalAuthorName":"诸葛兰剑"},{"authorName":"王曦","id":"5b43b102-227e-4c28-a937-83293cc0c5c6","originalAuthorName":"王曦"},{"authorName":"姚伟国","id":"7a05bfa5-68d3-4ff0-acf2-3d88a30127f0","originalAuthorName":"姚伟国"}],"doi":"","fpage":"670","id":"b25d7c02-eaea-42e1-bf3f-b6b9cbd20978","issue":"6","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"044ff258-af3e-4c6d-807c-7db389383608","keyword":"锗<span style=\"color:red\">纳米</span><span style=\"color:red\">镶嵌</span>薄膜","originalKeyword":"锗纳米镶嵌薄膜"},{"id":"88fb52e7-9655-4a03-9d2a-966432090ffb","keyword":"电致发光","originalKeyword":"电致发光"},{"id":"35ea5161-3e88-4abc-9f39-bf688b6e3de4","keyword":"发光机制","originalKeyword":"发光机制"}],"language":"zh","publisherId":"gncl200106038","title":"锗<span style=\"color:red\">纳米</span><span style=\"color:red\">镶嵌</span>薄膜的电致发光及其机制","volume":"32","year":"2001"},{"abstractinfo":"利用有限元法分析了在板平面内的剪切载荷作用时,<span style=\"color:red\">镶嵌</span>件及其周边区域各个部分的应力分布情况,得出蜂窝夹层<span style=\"color:red\">结构</span><span style=\"color:red\">镶嵌</span>件主要有两种剪切失效模式,分别为<span style=\"color:red\">镶嵌</span>件周围面板的压缩破坏和面板皱褶失稳.对于胶接质量好的蜂窝夹层板,面板中应力小于其压缩强度时,面板不会发生皱褶失稳,<span style=\"color:red\">镶嵌</span>件系统的失效模式是面板首先发生压缩破坏,可以通过局部增大<span style=\"color:red\">镶嵌</span>件周围的面板厚度与增大<span style=\"color:red\">镶嵌</span>件直径来降低面板中的应力.蜂窝夹层板有粘接缺陷时,则面板没有达到其压缩强度时就可能发生皱褶失稳.","authors":[{"authorName":"梁月华","id":"78c42fba-db59-4688-aac8-b83205370f43","originalAuthorName":"梁月华"},{"authorName":"韦娟芳","id":"ecc2b12f-1aa0-4830-9927-c8834bb69edb","originalAuthorName":"韦娟芳"}],"doi":"10.3969/j.issn.1003-0999.2011.04.005","fpage":"20","id":"e5c76ec7-e2e4-4021-9c35-00809839e3a8","issue":"4","journal":{"abbrevTitle":"BLGFHCL","coverImgSrc":"journal/img/cover/BLGFHCL.jpg","id":"6","issnPpub":"1003-0999","publisherId":"BLGFHCL","title":"玻璃钢/复合材料"},"keywords":[{"id":"98384a7a-389d-43c8-8092-3708e5c6abc7","keyword":"<span style=\"color:red\">镶嵌</span>件","originalKeyword":"镶嵌件"},{"id":"7a0aed48-3f7b-48c0-9d61-b49c69ec449a","keyword":"剪切载荷","originalKeyword":"剪切载荷"},{"id":"1d73886f-4a6d-4d19-8438-7d04bd84b76c","keyword":"失效模式","originalKeyword":"失效模式"},{"id":"12f46cb4-ca99-4be1-8f1f-ea2643c16c3a","keyword":"有限元分析","originalKeyword":"有限元分析"}],"language":"zh","publisherId":"blgfhcl201104005","title":"蜂窝夹层<span style=\"color:red\">结构</span><span style=\"color:red\">镶嵌</span>件剪切失效模式分析","volume":"","year":"2011"},{"abstractinfo":"采用磁控溅射及退火的方法制备了含Ge<span style=\"color:red\">纳米</span>晶的SiO2复合膜,应用拉曼散射和X射线衍射技术研究不同退火温度下的Ge<span style=\"color:red\">纳米</span>晶<span style=\"color:red\">结构</span>.结果表明:Ge<span style=\"color:red\">纳米</span>晶的结晶温度约为750 ℃.运用声子限域模型(RWL model)对样品的拉曼散射光谱进行拟合,确定出样品中Ge<span style=\"color:red\">纳米</span>晶的尺寸.通过XRD谱计算复合膜的内部压应力,得出由其引起的拉曼峰位的蓝移量,得出结论:压应力是造成拉曼模拟曲线与实验曲线峰位偏离的主要原因.","authors":[{"authorName":"张佳雯","id":"d66090de-64e3-4b1e-a093-133e443f66e8","originalAuthorName":"张佳雯"},{"authorName":"高斐","id":"e0c96362-6e6c-481e-aa8f-19ac21cbcf68","originalAuthorName":"高斐"},{"authorName":"晏春愉","id":"e21af926-5e8f-473b-92a2-93f7c1971fba","originalAuthorName":"晏春愉"},{"authorName":"孙杰","id":"3eb0c9d4-6e16-46e4-9687-afdc4f0ab4e7","originalAuthorName":"孙杰"},{"authorName":"权乃承","id":"237dcb89-4b42-40f6-895c-748d4978c0a4","originalAuthorName":"权乃承"},{"authorName":"刘伟","id":"8c6fd736-a022-473a-a145-2330c5c76a4f","originalAuthorName":"刘伟"},{"authorName":"方晓玲","id":"e8f0f2b7-1f3c-45d4-b758-c8ce20967f5f","originalAuthorName":"方晓玲"}],"doi":"","fpage":"143","id":"8c36c132-e2a1-41c6-a500-c8e07bf10921","issue":"1","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"58cdcb66-473d-452d-aa1e-c95c2883e35c","keyword":"Ge<span style=\"color:red\">纳米</span>晶","originalKeyword":"Ge纳米晶"},{"id":"770cc055-b824-4526-91c6-3273d8101446","keyword":"磁控溅射","originalKeyword":"磁控溅射"},{"id":"3c593e33-205b-4ab1-94a6-e1ed4cfb3436","keyword":"退火","originalKeyword":"退火"},{"id":"bd2a5324-c0fe-4c42-8a51-85c50983f96d","keyword":"SiO2膜","originalKeyword":"SiO2膜"},{"id":"f82210b6-2f55-4b72-885e-70f412d8144f","keyword":"声子限域模型","originalKeyword":"声子限域模型"}],"language":"zh","publisherId":"rgjtxb98200901028","title":"退火温度对<span style=\"color:red\">镶嵌</span>于SiO2膜中的Ge<span style=\"color:red\">纳米</span>晶<span style=\"color:red\">结构</span>的影响","volume":"38","year":"2009"}],"totalpage":7639,"totalrecord":76386}