{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"为了考察不同晶粒取向与45钢配副时摩擦磨损性能,采用于滑动磨损方式,研究了表面具有水平/垂直晶粒取向销配副45钢圆盘摩擦学行为,表征了配副材料磨损表面形貌和组成.结果表明:晶粒水平取向销与45钢圆盘干滑动磨损时,摩擦系数较小且稳定,氧化磨损占主导地位;晶粒垂直取向销与45钢圆盘干滑动磨损时,摩擦系数较大且波动剧烈,磨粒磨损及黏着磨损占主导地位.","authors":[{"authorName":"商剑","id":"39ddf505-4f90-462a-9da0-955e0454b592","originalAuthorName":"商剑"},{"authorName":"张越","id":"599346af-e218-490f-b13c-b2bc9194c8cd","originalAuthorName":"张越"},{"authorName":"刘亮","id":"42e186e6-1932-47bd-971e-db3888207cad","originalAuthorName":"刘亮"}],"doi":"","fpage":"1","id":"57a315c8-aae8-4d3e-893a-7309bac0d3ac","issue":"11","journal":{"abbrevTitle":"CLBH","coverImgSrc":"journal/img/cover/CLBH.jpg","id":"7","issnPpub":"1001-1560","publisherId":"CLBH","title":"材料保护"},"keywords":[{"id":"59502682-3f1e-4aa9-bbac-15464cdb7e03","keyword":"摩擦磨损","originalKeyword":"摩擦磨损"},{"id":"3b73ea09-69ee-4b9f-829b-41d8c66e146d","keyword":"纯与45钢","originalKeyword":"纯铜与45钢"},{"id":"03230574-3a4e-458b-b590-d152ccc6fe83","keyword":"晶粒取向","originalKeyword":"铜的晶粒取向"},{"id":"9d21a6ce-d69c-492f-83bc-90dca7b23ead","keyword":"磨损机制","originalKeyword":"磨损机制"}],"language":"zh","publisherId":"clbh201511001","title":"不同晶粒取向与45钢配副时摩擦磨损机制","volume":"48","year":"2015"},{"abstractinfo":"基于电子背散射分析(EBSD)技术对纯铜柱状晶标定获得初始晶粒形貌和平均取向,利用晶体塑性理论,建立了基于晶粒真实取向和形貌多晶塑性有限元模型,模拟了纯铜柱状晶单轴压缩过程中取向和形貌变化。通过实施相应单轴压缩实验获得了取向和形貌变化实验数据。系统地比较了多晶样品中每一个晶粒取向和形貌模拟结果和实验结果,得到晶粒取向和微观结构变化统计性结果。","authors":[{"authorName":"曹鹏","id":"b7a283c2-af8a-4f8c-802b-58d22f9c4f02","originalAuthorName":"曹鹏"},{"authorName":"方刚","id":"64cbcec8-67b0-4c9a-9f56-560ab50aaec6","originalAuthorName":"方刚"},{"authorName":"雷丽萍","id":"f42450ed-3dbf-456a-a557-2fb17c507314","originalAuthorName":"雷丽萍"},{"authorName":"曾攀","id":"ef29aa0d-f84e-476b-a5e7-76e308b87423","originalAuthorName":"曾攀"}],"categoryName":"|","doi":"","fpage":"913","id":"6d583bed-e233-4f4e-a108-dca9306838a9","issue":"9","journal":{"abbrevTitle":"JSXB","coverImgSrc":"journal/img/cover/JSXB.jpg","id":"48","issnPpub":"0412-1961","publisherId":"JSXB","title":"金属学报"},"keywords":[{"id":"66a3e94a-e15f-4e01-bcc2-cabe417ddd48","keyword":"柱状晶","originalKeyword":"柱状晶"},{"id":"a432addd-b266-464a-b545-02655a959093","keyword":"pure copper","originalKeyword":"pure copper"},{"id":"0bcebe54-487c-493a-b4cd-291d3dd83c37","keyword":"grain orientation","originalKeyword":"grain orientation"}],"language":"zh","publisherId":"0412-1961_2007_9_7","title":"多晶压缩过程中晶粒取向演化塑性理论分析","volume":"43","year":"2007"},{"abstractinfo":"基于电子背散射分析(EBSD)技术对纯铜柱状晶标定获得初始晶粒形貌和平均取向,利用晶体塑性理论,建立了基于晶粒真实取向和形貌多晶塑性有限元模型,模拟了纯铜柱状晶单轴压缩过程中取向变化,并对形变带形貌进行初步模拟.通过相应单轴压缩实验获得了取向变化和形变带形貌实验数据.系统地比较了多晶样品中各晶粒取向演化和形变带形貌模拟结果和实验结果,得到晶粒取向和微观结构变化统计性结果.","authors":[{"authorName":"曹鹏","id":"abf876cb-d886-4bff-9835-7557ca5a07d0","originalAuthorName":"曹鹏"},{"authorName":"方刚","id":"9d63950b-8077-46df-92a2-c6c4eeca133d","originalAuthorName":"方刚"},{"authorName":"雷丽萍","id":"5065ae8e-89e5-4229-883c-d7155d763e8b","originalAuthorName":"雷丽萍"},{"authorName":"曾攀","id":"88835f18-8df7-4bc6-b324-14d41791f6b3","originalAuthorName":"曾攀"}],"doi":"10.3321/j.issn:0412-1961.2007.09.004","fpage":"913","id":"0e0b53dc-067c-4576-a5e4-89ed2dfb4fb7","issue":"9","journal":{"abbrevTitle":"JSXB","coverImgSrc":"journal/img/cover/JSXB.jpg","id":"48","issnPpub":"0412-1961","publisherId":"JSXB","title":"金属学报"},"keywords":[{"id":"06486d17-71fa-48eb-8430-deb6c254a233","keyword":"柱状晶","originalKeyword":"柱状晶"},{"id":"ced3a014-3fa4-4a30-beaa-25977394baa3","keyword":"纯","originalKeyword":"纯铜"},{"id":"51f17e71-5b0e-498c-b37a-0d423c180efc","keyword":"晶粒取向","originalKeyword":"晶粒取向"},{"id":"788621f9-2fdc-4977-8b83-514b70948efd","keyword":"有限元","originalKeyword":"有限元"},{"id":"d3f3afaa-6abb-4e23-be6b-5e8bd7e60ea5","keyword":"电子背散射图","originalKeyword":"电子背散射图"}],"language":"zh","publisherId":"jsxb200709004","title":"多晶压缩过程中晶粒取向演化塑性理论分析","volume":"43","year":"2007"},{"abstractinfo":"将以MnS为主要抑制剂普通取向电工钢作为实验材料, 检测并分析脱碳样品宏观织构及脱碳和随后加热至925℃时样品微观织构, 统计分析了Goss与周围晶粒取向差分布。根据取向差原理计算了脱碳样品主要织构组分内各取向晶粒取向差环境。结果表明, 取向电工钢脱碳退火后Goss晶粒与周围晶粒取向差分布呈现大角度特征, 主要取向差分布范围为30o--45o, 而非Goss晶粒与周围晶粒取向差分布则呈现更多小角度特征。二次再结晶后, Goss晶粒与周围晶粒取向差分布仍然以大角度特征为主。","authors":[{"authorName":"李阳毛卫民","id":"2d155bac-c872-42b5-be38-8e1a644612e6","originalAuthorName":"李阳毛卫民"}],"categoryName":"|","doi":"","fpage":"33","id":"ae860c95-bf5b-4a29-8720-f2c7bbd60658","issue":"1","journal":{"abbrevTitle":"CLYJXB","coverImgSrc":"journal/img/cover/CLYJXB.jpg","id":"16","issnPpub":"1005-3093","publisherId":"CLYJXB","title":"材料研究学报"},"keywords":[{"id":"2c946907-17a1-4a89-a3b4-375bfb098165","keyword":"金属材料 ","originalKeyword":"金属材料 "},{"id":"c96a0b2c-dae0-46ba-bc58-6eb42b16d5b3","keyword":"  grain oriented electrical steel ","originalKeyword":"  grain oriented electrical steel "},{"id":"07970b67-0865-4644-b922-54b84f86ca5f","keyword":" misorientation distribution ","originalKeyword":" misorientation distribution "},{"id":"2836a29d-ac7e-48e5-b7b8-08de81001b49","keyword":" Goss grain","originalKeyword":" Goss grain"}],"language":"zh","publisherId":"1005-3093_2010_1_7","title":"取向电工钢中Goss晶粒生长取向环境","volume":"24","year":"2010"},{"abstractinfo":"将以MnS为主要抑制剂普通取向电工钢作为实验材料,检测并分析脱碳样品宏观织构及脱碳和随后加热至925℃时样品微观织构,统计分析了Goss与周围晶粒取向差分布.根据取向差原理计算了脱碳样品主要织构组分内各取向晶粒取向差环境.结果表明,取向电工钢脱碳退火后Goss晶粒与周围晶粒取向差分布呈现大角度特征,主要取向差分布范围为30°-45°,而非Goss晶粒与周围晶粒取向差分布则呈现更多小角度特征.二次再结晶后,Goss晶粒与周围晶粒取向差分布仍然以大角度特征为主.","authors":[{"authorName":"李阳","id":"d928fd43-b4b9-435d-83b2-6ba989eb3062","originalAuthorName":"李阳"},{"authorName":"毛卫民","id":"b0f0c392-7cee-498d-b15c-fe6c2f182786","originalAuthorName":"毛卫民"}],"doi":"","fpage":"33","id":"c8245a7e-630a-4da5-9619-aad8f75ce7f3","issue":"1","journal":{"abbrevTitle":"CLYJXB","coverImgSrc":"journal/img/cover/CLYJXB.jpg","id":"16","issnPpub":"1005-3093","publisherId":"CLYJXB","title":"材料研究学报"},"keywords":[{"id":"6c39dfd7-0453-4aeb-9d78-fbaf50452a96","keyword":"金属材料","originalKeyword":"金属材料"},{"id":"222a6738-5e4a-42e7-a667-ec7311021eec","keyword":"取向电工钢","originalKeyword":"取向电工钢"},{"id":"0bd410ce-4733-4716-8532-e55eb62c4cf1","keyword":"取向差分布","originalKeyword":"取向差分布"},{"id":"f2e05a67-040c-40d5-a925-05200cfa66a4","keyword":"Goss晶粒","originalKeyword":"Goss晶粒"}],"language":"zh","publisherId":"clyjxb201001005","title":"取向电工钢中Goss晶粒生长取向环境","volume":"24","year":"2010"},{"abstractinfo":"通过对板坯加热、细化磁畴及减薄带钢等方面专利技术论述,展示了世界取向硅钢研究开发状态和趋势.","authors":[{"authorName":"张译中","id":"62dc2216-eb0c-480a-8e54-63943d411e1b","originalAuthorName":"张译中"}],"doi":"10.3969/j.issn.1001-7208.2002.03.007","fpage":"31","id":"def0e375-68fb-464e-8498-1745841bbbe8","issue":"3","journal":{"abbrevTitle":"SHJS","coverImgSrc":"journal/img/cover/SHJS.jpg","id":"59","issnPpub":"1001-7208","publisherId":"SHJS","title":"上海金属"},"keywords":[{"id":"ba88a4e0-e901-442c-b205-1f21a438c326","keyword":"取向硅钢","originalKeyword":"取向硅钢"},{"id":"47e8dafd-7c58-4570-a6a9-966e1dfe7039","keyword":"专利技术","originalKeyword":"专利技术"},{"id":"99142a83-cef2-408c-987e-46933c244c7a","keyword":"进展","originalKeyword":"进展"}],"language":"zh","publisherId":"shjs200203007","title":"国外晶粒取向硅钢技术进展","volume":"24","year":"2002"},{"abstractinfo":"利用SEM、EBSD技术对低温热轧技术热轧板和常化板进行了织构研究,并对不同取向晶粒粒子进行了对比分析.结果表明:常化处理对热轧织构中旋转立方{100} <011>织构强度有一定减弱;常化后4种不同取向晶粒粒子面密度及粒子尺寸存在明显差异,其粒子面密度分布规律表现为黄铜取向晶粒> Goss取向晶粒取向晶粒>{100} <011>取向晶粒,且黄铜取向晶粒粒子平均尺寸最小,40 ~ 60 nm范围内粒子也明显多于其他取向晶粒.","authors":[{"authorName":"何承绪","id":"8381baf3-6761-41cb-99c7-0cb8c79aa689","originalAuthorName":"何承绪"},{"authorName":"孟利","id":"d9867136-0d1a-406d-ae21-b611bb093fad","originalAuthorName":"孟利"},{"authorName":"马光","id":"b464f233-7f1a-4859-8d1b-5f93e90af4d1","originalAuthorName":"马光"},{"authorName":"陈新","id":"1ab1194f-549d-4038-bbc7-d5402391955b","originalAuthorName":"陈新"},{"authorName":"毛卫民","id":"d60bcfb9-253d-4e86-9303-c8a02ca6b030","originalAuthorName":"毛卫民"}],"doi":"","fpage":"115","id":"ef3d86bd-b140-474d-b19d-7044816e49da","issue":"6","journal":{"abbrevTitle":"CLRCLXB","coverImgSrc":"journal/img/cover/CLRCLXB.jpg","id":"15","issnPpub":"1009-6264","publisherId":"CLRCLXB","title":"材料热处理学报"},"keywords":[{"id":"211e482e-5449-4c83-97c0-0e36dfb01266","keyword":"Hi-B钢","originalKeyword":"Hi-B钢"},{"id":"bd4a50cf-45ea-4904-8bef-82c5b7368cc7","keyword":"热轧","originalKeyword":"热轧"},{"id":"32fc5814-04c3-4559-8781-ba6ea6d11683","keyword":"常化","originalKeyword":"常化"},{"id":"0d4c5502-ae68-4ad6-9067-2f3e07be18e7","keyword":"晶粒取向","originalKeyword":"晶粒取向"},{"id":"ee506dd6-f2a7-4ce1-8ab4-c4c1fc11299e","keyword":"析出相粒子","originalKeyword":"析出相粒子"}],"language":"zh","publisherId":"jsrclxb201506022","title":"取向硅钢常化板织构及不同取向晶粒中析出相粒子分布","volume":"36","year":"2015"},{"abstractinfo":"采用EBSD分析技术对冷轧无取向电工硅钢和冷轧取向电工硅钢晶粒取向特征进行了研究.结果表明,无取向电工硅钢轧制表面OIM图呈多种颜色分布,晶界取向差在18.9°~37.4°之间,晶粒度6.0~10.0级,在反极图上,(001)、(101)和(111)晶面有漫散织构存在.取向电工硅钢轧制表面OIM图色彩单调,晶粒粗大,晶界取向差在7.9°~16.0°之间,在反极图上,仅(101)晶面有锋锐织构,(001)和(111)晶面没有织构存在.根据OIM图和反极图分析,可以鉴别电工硅钢晶粒取向.","authors":[{"authorName":"李岩","id":"83365d2e-974d-4900-93d1-265a1ed3bbba","originalAuthorName":"李岩"},{"authorName":"董秀文","id":"6bd71877-6517-44de-8443-4a6e9e535db1","originalAuthorName":"董秀文"},{"authorName":"孔平","id":"db313532-4604-4165-8b38-4b2d32e81c72","originalAuthorName":"孔平"},{"authorName":"杜大帆","id":"1bafcc42-3bdc-4e23-899f-284fd4fb1af4","originalAuthorName":"杜大帆"},{"authorName":"雷运涛","id":"9164759a-9a28-47eb-a9b2-42e4981e0302","originalAuthorName":"雷运涛"}],"doi":"","fpage":"70","id":"d24086ac-0142-435d-9975-561ac2978ffb","issue":"3","journal":{"abbrevTitle":"CLRCLXB","coverImgSrc":"journal/img/cover/CLRCLXB.jpg","id":"15","issnPpub":"1009-6264","publisherId":"CLRCLXB","title":"材料热处理学报"},"keywords":[{"id":"0eec8ea6-caf2-4110-b09f-157ac1b052a9","keyword":"冷轧电工硅钢","originalKeyword":"冷轧电工硅钢"},{"id":"c030c7fb-c5c2-49ea-ace8-5b9d4619bc68","keyword":"OIM图","originalKeyword":"OIM图"},{"id":"14336dba-ffab-4ab9-8ab7-d4edf7787ea5","keyword":"反极图","originalKeyword":"反极图"},{"id":"b4e6bf6b-350d-4ea1-b96b-30d73c68a15a","keyword":"晶粒取向鉴别","originalKeyword":"晶粒取向鉴别"}],"language":"zh","publisherId":"jsrclxb201603013","title":"EBSD表征冷轧电工硅钢晶粒取向研究","volume":"37","year":"2016"},{"abstractinfo":"由于取向生长技术可以显著地提高压电陶瓷性能, 并且不会降低材料居里温度, 故压电陶瓷晶粒取向生长技术已成为研究热点. 本文分别从定向凝固技术、多层晶粒生长技术、模板晶粒生长技术和反应模板晶粒生长技术等四个方面,归纳和分析了近年来压电陶瓷晶粒取向生长技术研究进展,并对压电陶瓷晶粒取向生长技术今后研究和发展提出一些建议.","authors":[{"authorName":"杜红亮","id":"e4065dc5-93bd-43d2-8fd8-2fb57214ff98","originalAuthorName":"杜红亮"},{"authorName":"张孟","id":"18785b6f-9c3c-44b5-8bcc-841fc4ba72f5","originalAuthorName":"张孟"},{"authorName":"苏晓磊","id":"c5990e06-ba51-4215-a42e-ce563b049316","originalAuthorName":"苏晓磊"},{"authorName":"周万城","id":"a2ccd150-c9ee-4e1e-84fe-d0c8197b6cc5","originalAuthorName":"周万城"},{"authorName":"裴志斌","id":"08adf8f3-efc3-4ddb-8ae6-fb24e7260d62","originalAuthorName":"裴志斌"},{"authorName":"屈绍波","id":"54660e31-04d3-4256-8011-408374f290e9","originalAuthorName":"屈绍波"}],"categoryName":"|","doi":"10.3724/SP.J.1077.2008.00001","fpage":"1","id":"e9f827de-a965-447d-9386-bd1257d457f4","issue":"1","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"a6a7e8b5-d2cc-4299-b785-ac4e9409b9a9","keyword":"压电陶瓷","originalKeyword":"压电陶瓷"},{"id":"31156b64-e05d-40bc-8f83-73d1898d94e2","keyword":" oriented growth","originalKeyword":" oriented growth"},{"id":"90be4b0c-189a-4fbd-8bae-6c2412a4b5e8","keyword":" degree of orientation","originalKeyword":" degree of orientation"},{"id":"1eece167-a8b9-41c1-afe9-be2578dd7fb1","keyword":" texured ceramics","originalKeyword":" texured ceramics"}],"language":"zh","publisherId":"1000-324X_2008_1_23","title":"压电陶瓷晶粒取向生长技术研究进展","volume":"23","year":"2008"},{"abstractinfo":"由于取向生长技术可以显著地提高压电陶瓷性能,并且不会降低材料居里温度,故压电陶瓷晶粒取向生长技术已成为研究热点.本文分别从定向凝固技术、多层晶粒生长技术、模板晶粒生长技术和反应模板晶粒生长技术等四个方面,归纳和分析了近年来压电陶瓷晶粒取向生长技术研究进展,并对压电陶瓷晶粒取向生长技术今后研究和发展提出一些建议.","authors":[{"authorName":"杜红亮","id":"56070c23-5d9e-45a4-9573-700a232a59c7","originalAuthorName":"杜红亮"},{"authorName":"张孟","id":"0adf4dc1-9c4d-42db-96e8-859765bc6ec6","originalAuthorName":"张孟"},{"authorName":"苏晓磊","id":"a7ca3f67-2a24-4093-b54f-604d63a51aa4","originalAuthorName":"苏晓磊"},{"authorName":"周万城","id":"43644d45-2dad-40e8-af05-e075bdd7c10f","originalAuthorName":"周万城"},{"authorName":"裴志斌","id":"69dbd14b-dc87-4c84-8a89-9fcb8042fe5c","originalAuthorName":"裴志斌"},{"authorName":"屈绍波","id":"425535f3-2173-433a-83ab-ad7aca134dc3","originalAuthorName":"屈绍波"}],"doi":"10.3321/j.issn:1000-324X.2008.01.001","fpage":"1","id":"e23552d8-bfde-43e7-8bc1-aef94ccd5b13","issue":"1","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"3458e7e7-0e58-4204-b64c-54efd1920258","keyword":"压电陶瓷","originalKeyword":"压电陶瓷"},{"id":"2be49935-bbe5-4f7e-bc48-3e08a4ad15f7","keyword":"取向生长","originalKeyword":"取向生长"},{"id":"1a5e21e6-1e29-408c-a8d5-7b9ab7bf43be","keyword":"取向度","originalKeyword":"取向度"},{"id":"50884ae9-3f0c-4dad-82e6-23f6e8151738","keyword":"织构陶瓷","originalKeyword":"织构陶瓷"}],"language":"zh","publisherId":"wjclxb200801001","title":"压电陶瓷晶粒取向生长技术研究进展","volume":"23","year":"2008"}],"totalpage":21584,"totalrecord":215839}