{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"介绍了在硅基片上用<span style=\"color:red\">钽</span><span style=\"color:red\">溅射靶</span><span style=\"color:red\">溅射</span>沉积和用<span style=\"color:red\">钽</span>的化合物气相化学沉积<span style=\"color:red\">钽</span>基膜(金属<span style=\"color:red\">钽</span>、碳化<span style=\"color:red\">钽</span>、氮化<span style=\"color:red\">钽</span>、硅化<span style=\"color:red\">钽</span>、氮化硅化<span style=\"color:red\">钽</span>、氮化碳化<span style=\"color:red\">钽</span>)作为集成电路中防止铜向基片硅中扩散的阻挡层, 介绍了<span style=\"color:red\">钽</span><span style=\"color:red\">溅射靶</span>的技术要求, 加工方法以及化学气相沉积<span style=\"color:red\">钽</span>基薄膜的方法. ","authors":[{"authorName":"潘伦桃","id":"0a0e0690-3176-4c0e-a1d6-cb4286be92b8","originalAuthorName":"潘伦桃"},{"authorName":"李彬","id":"7a688aa4-bba1-4baa-9fc8-4978444993a4","originalAuthorName":"李彬"},{"authorName":"郑爱国","id":"b8b6c545-9e8b-4cbc-a85f-68e326c51647","originalAuthorName":"郑爱国"},{"authorName":"吕建波","id":"b5118ae1-96d0-4cb1-b5cd-e34662c54677","originalAuthorName":"吕建波"},{"authorName":"李海军","id":"0d115877-4674-49c9-b4f4-58f984678dfc","originalAuthorName":"李海军"},{"authorName":"王秋迎","id":"68f99d56-e44f-44be-aa5f-c7cd8661832f","originalAuthorName":"王秋迎"}],"doi":"10.3969/j.issn.0258-7076.2003.01.005","fpage":"28","id":"b518af4f-1105-47cc-b951-ce60693780da","issue":"1","journal":{"abbrevTitle":"XYJS","coverImgSrc":"journal/img/cover/XYJS.jpg","id":"67","issnPpub":"0258-7076","publisherId":"XYJS","title":"稀有金属"},"keywords":[{"id":"d0cc3488-e249-426b-98c3-aaaa5954af2c","keyword":"<span style=\"color:red\">钽</span>","originalKeyword":"钽"},{"id":"8c915fa0-d9e8-4642-98bf-8c4ced90ad2e","keyword":"阻挡层","originalKeyword":"阻挡层"},{"id":"66de0e6e-8402-4f2d-ad40-fdb312f3278a","keyword":"<span style=\"color:red\">钽</span><span style=\"color:red\">溅射靶</span>","originalKeyword":"钽溅射靶"},{"id":"713dc967-3ee7-4388-bd0a-39100ab90fda","keyword":"化学气相沉积","originalKeyword":"化学气相沉积"}],"language":"zh","publisherId":"xyjs200301005","title":"<span style=\"color:red\">钽</span>在集成电路中的应用","volume":"27","year":"2003"},{"abstractinfo":"金属<span style=\"color:red\">钽</span>可作为集成电路中铜与硅基板的阻隔层材料,以防止铜与硅扩散生成铜硅合金影响电路性能.采用<span style=\"color:red\">钽</span>靶材通过物理气相沉积技术<span style=\"color:red\">溅射</span><span style=\"color:red\">钽</span>到硅片上.靶材晶粒尺寸与织构取向影响<span style=\"color:red\">溅射</span>速率及<span style=\"color:red\">溅射</span>薄膜均匀性,要求<span style=\"color:red\">钽</span>靶材晶粒尺寸应小于100 μm,在靶材整个厚度范围内应主要是(111)型织构.同时,为了避免薄膜存在杂质颗粒,要求<span style=\"color:red\">钽</span>靶材纯度不小于99.99％.本文对<span style=\"color:red\">钽</span>靶材电子束熔炼、锻造、轧制、热处理等关键工艺进行了系统研究,找到了一种有别于常规<span style=\"color:red\">钽</span>靶材生产工艺的新方法,所生产产品化学纯度、晶粒尺寸、织构等性能优良,产品成品率高,适于批量化生产.","authors":[{"authorName":"宜楠","id":"cb819af8-ca26-4898-b1ff-02341e66ec04","originalAuthorName":"宜楠"},{"authorName":"权振兴","id":"91d87f89-a211-418c-96fc-85d521df77ee","originalAuthorName":"权振兴"},{"authorName":"赵鸿磊","id":"5630b70e-8dbd-4625-8b70-dc67a595f624","originalAuthorName":"赵鸿磊"},{"authorName":"武宇","id":"2739b640-54d3-46e4-b16a-f04419374847","originalAuthorName":"武宇"}],"doi":"","fpage":"71","id":"f9dce71b-4d10-4ac2-95ef-a3c52f48b0b8","issue":"3","journal":{"abbrevTitle":"CLKFYYY","coverImgSrc":"journal/img/cover/CLKFYYY.jpg","id":"10","issnPpub":"1003-1545","publisherId":"CLKFYYY","title":"材料开发与应用"},"keywords":[{"id":"1b532923-7a9a-43ce-9b15-729fbb8f74c3","keyword":"<span style=\"color:red\">钽</span>","originalKeyword":"钽"},{"id":"d7322e05-cb70-41b2-8543-732b3244ed53","keyword":"<span style=\"color:red\">溅射靶</span>材","originalKeyword":"溅射靶材"},{"id":"d55b61ac-002f-431c-a60e-64e2307b4ba8","keyword":"晶粒尺寸","originalKeyword":"晶粒尺寸"},{"id":"848b6b7b-69c1-4f59-881f-36c0b5ba328c","keyword":"织构","originalKeyword":"织构"},{"id":"7815b6ad-f6d0-4370-b652-875c12b68e7e","keyword":"电子束熔炼","originalKeyword":"电子束熔炼"},{"id":"aeab7230-2e09-4621-aca4-379932eefaff","keyword":"锻造","originalKeyword":"锻造"},{"id":"791c866d-50c2-4c8c-be11-13a06c946b35","keyword":"轧制","originalKeyword":"轧制"},{"id":"260ea2f7-b948-43f2-b657-b347664efd87","keyword":"热处理","originalKeyword":"热处理"}],"language":"zh","publisherId":"clkfyyy201603014","title":"集成电路用<span style=\"color:red\">钽</span><span style=\"color:red\">溅射靶</span>材制备工艺研究","volume":"31","year":"2016"},{"abstractinfo":"本文综述了ITO靶材的国内外研究、制造技术和国内市场应用状况.详细阐述了ITO<span style=\"color:red\">溅射靶</span>的物理性能、国外制造ITO<span style=\"color:red\">溅射靶</span>的主要方法、国内研究状况.系统分析了ITO<span style=\"color:red\">溅射靶</span>制造技术方面的专利.","authors":[{"authorName":"张智强","id":"1b1c8543-454f-4eed-8e2a-7cbf50cc605b","originalAuthorName":"张智强"}],"doi":"10.3969/j.issn.1003-1545.2010.01.018","fpage":"66","id":"bacfdfd6-0250-44e9-8a55-ce05f90e28ac","issue":"1","journal":{"abbrevTitle":"CLKFYYY","coverImgSrc":"journal/img/cover/CLKFYYY.jpg","id":"10","issnPpub":"1003-1545","publisherId":"CLKFYYY","title":"材料开发与应用"},"keywords":[{"id":"7f255ba3-f306-4bf8-b058-088c44192ca6","keyword":"ITO靶材","originalKeyword":"ITO靶材"},{"id":"5b94fed7-0da3-4917-b16f-81092a06cbe2","keyword":"研究","originalKeyword":"研究"},{"id":"4533eaef-392b-4d85-b275-3b746ec22ddf","keyword":"制造","originalKeyword":"制造"}],"language":"zh","publisherId":"clkfyyy201001018","title":"ITO<span style=\"color:red\">溅射靶</span>材国内外研究状况","volume":"25","year":"2010"},{"abstractinfo":"<span style=\"color:red\">溅射靶</span>材常用于半导体产业、记录媒体产业和先进显示器产业. 在不同产业中, 半导体集成电路制造业对<span style=\"color:red\">溅射靶</span>材的质量要求最高. 对用于集成电路制造的<span style=\"color:red\">溅射靶</span>材的材质类型、纯度要求、外形发展进行了阐述, 并讨论了<span style=\"color:red\">溅射靶</span>材微观组织对<span style=\"color:red\">溅射</span>薄膜性质的影响, 以及靶材中夹杂物、晶粒尺寸、晶粒取向的控制方法.","authors":[{"authorName":"尚再艳","id":"e1afd132-13b0-45ea-8f07-d259d3cd67dd","originalAuthorName":"尚再艳"},{"authorName":"江轩","id":"dd4eefac-2ef1-4f80-944b-fea803460373","originalAuthorName":"江轩"},{"authorName":"李勇军","id":"0e8f34eb-f740-459c-910c-d6e31b49915a","originalAuthorName":"李勇军"},{"authorName":"杨永刚","id":"d354b7ef-f862-483f-a296-028c7f7ecbad","originalAuthorName":"杨永刚"}],"doi":"10.3969/j.issn.0258-7076.2005.04.022","fpage":"475","id":"7636e988-0e0a-4ef3-8975-70960dc79fdc","issue":"4","journal":{"abbrevTitle":"XYJS","coverImgSrc":"journal/img/cover/XYJS.jpg","id":"67","issnPpub":"0258-7076","publisherId":"XYJS","title":"稀有金属"},"keywords":[{"id":"0ed296a9-62cb-459b-996b-97fa0cf775fa","keyword":"集成电路","originalKeyword":"集成电路"},{"id":"66ae37d0-1f59-4196-bf02-3af046d5eab6","keyword":"<span style=\"color:red\">溅射</span>","originalKeyword":"溅射"},{"id":"35d719a7-0c30-449b-bad9-78eff5a90a6a","keyword":"靶材","originalKeyword":"靶材"},{"id":"e2832166-b385-4b85-bc0a-25c1ce4a31eb","keyword":"半导体","originalKeyword":"半导体"}],"language":"zh","publisherId":"xyjs200504022","title":"集成电路制造用<span style=\"color:red\">溅射靶</span>材","volume":"29","year":"2005"},{"abstractinfo":"非平衡磁控<span style=\"color:red\">溅射</span>技术的关键就是设计非平衡磁控<span style=\"color:red\">溅射靶</span>的靶面磁场分布.改善靶面横向磁场分布的均匀性是提高靶材利用率的有效途径.通过磁场的有限元分析,得到了圆型平面非平衡磁控<span style=\"color:red\">溅射靶</span>结构参数对靶面磁场均匀性和强度的影响,给出了非平衡磁控<span style=\"color:red\">溅射靶</span>的优化设计结构,并与实验结果进行了对比分析,靶面磁场强度和分布均匀性得以明显改善.","authors":[{"authorName":"马剑平","id":"45fb416d-0fd3-4ad5-bba8-398652d902c3","originalAuthorName":"马剑平"},{"authorName":"刘艳涛","id":"1986a925-4ac5-46b0-ac31-0624d45c973c","originalAuthorName":"刘艳涛"}],"doi":"","fpage":"759","id":"2dd7d7e3-aaaa-48cf-973f-815e762d6fef","issue":"3","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"df43efc6-5a89-4494-9a9a-32f93eb9ab01","keyword":"磁控<span style=\"color:red\">溅射</span>","originalKeyword":"磁控溅射"},{"id":"840c9388-3da2-4e13-ade3-09e41f721974","keyword":"有限元","originalKeyword":"有限元"},{"id":"c3ec9dd3-2e6f-4a49-8c86-d69a49bf4c85","keyword":"横向分量","originalKeyword":"横向分量"}],"language":"zh","publisherId":"rgjtxb98200803052","title":"圆型平面非平衡磁控<span style=\"color:red\">溅射靶</span>的优化设计","volume":"37","year":"2008"},{"abstractinfo":"集成电路制造用<span style=\"color:red\">溅射靶</span>材的绑定技术,又称焊接或粘接技术,是<span style=\"color:red\">溅射</span>机台设计和制造工程师、<span style=\"color:red\">溅射靶</span>材开发生产工程师、以及集成电路制造工艺和设备工程师共同关心的问题,通过对比研究机械连接、钎焊、胶粘结、扩散焊、电子束焊和爆炸焊的应用条件和优缺点,增进<span style=\"color:red\">溅射靶</span>材设计、生产和使用相关工程师对靶材绑定技术的交流和认识.","authors":[{"authorName":"雷继锋","id":"be3e36d6-de2c-4995-896b-801edfe14522","originalAuthorName":"雷继锋"}],"doi":"","fpage":"48","id":"e74165ff-ad26-48ad-93c1-241080ea3974","issue":"1","journal":{"abbrevTitle":"JSGNCL","coverImgSrc":"journal/img/cover/JSGNCL.jpg","id":"46","issnPpub":"1005-8192","publisherId":"JSGNCL","title":"金属功能材料"},"keywords":[{"id":"67e41985-aed0-49cf-b526-1e7d485eba15","keyword":"<span style=\"color:red\">溅射靶</span>材","originalKeyword":"溅射靶材"},{"id":"e4279b4e-e4b9-46a3-a21e-0dc10db428e3","keyword":"钎焊","originalKeyword":"钎焊"},{"id":"b432f56a-1ddb-43a2-a870-45205d138995","keyword":"扩散焊","originalKeyword":"扩散焊"},{"id":"bb000912-ff81-41c0-96cd-c59128949785","keyword":"电子束焊","originalKeyword":"电子束焊"},{"id":"856648a3-7f36-44ed-9529-519477301b4a","keyword":"爆炸焊","originalKeyword":"爆炸焊"}],"language":"zh","publisherId":"jsgncl201301010","title":"集成电路制造用<span style=\"color:red\">溅射靶</span>材绑定技术相关问题研究","volume":"20","year":"2013"},{"abstractinfo":"<span style=\"color:red\">溅射靶</span>材的微观组织均匀性、晶粒尺寸大小及晶粒取向分布对<span style=\"color:red\">溅射</span>性能有着直接的影响。采用电子背散射衍射(EBSD)技术对制备的高纯Au<span style=\"color:red\">溅射靶</span>材不同区域的微观组织、织构组分和晶界取向差进行了研究。结果表明，高纯金靶材整体晶粒尺寸分布均匀，平均尺寸192.5 nm，边沿及中心晶界取向差分布比较相似，组织均匀性良好，对<span style=\"color:red\">溅射</span>高质量薄膜十分有利。","authors":[{"authorName":"阳岸恒","id":"d291ba7c-84ca-4aaa-9993-a08a0ee98888","originalAuthorName":"阳岸恒"},{"authorName":"朱勇","id":"6c3206d2-1cf2-4550-86e7-a6205de52275","originalAuthorName":"朱勇"},{"authorName":"邓志明","id":"1595d89d-6636-4718-af0e-af72e9bb4905","originalAuthorName":"邓志明"},{"authorName":"谢宏潮","id":"b91d1e32-4a05-4949-b032-e734e6a62556","originalAuthorName":"谢宏潮"},{"authorName":"张国全","id":"1ec85eee-26b0-4b74-8500-c6e0c0eb1395","originalAuthorName":"张国全"},{"authorName":"吴霏","id":"d928120c-be18-4ff0-95e1-58e8e12a8e29","originalAuthorName":"吴霏"}],"doi":"","fpage":"45","id":"b007e6d2-ec7b-4ec2-99b6-867a35b4e009","issue":"3","journal":{"abbrevTitle":"GJS","coverImgSrc":"journal/img/cover/GJS.jpg","id":"38","issnPpub":"1004-0676","publisherId":"GJS","title":"贵金属"},"keywords":[{"id":"5d4110a1-a2f7-46b4-8099-ea73dbebabbf","keyword":"金属材料","originalKeyword":"金属材料"},{"id":"e39390ac-5476-40b5-b196-b54869f38ea3","keyword":"高纯金","originalKeyword":"高纯金"},{"id":"0b84e361-6b38-4e2a-8757-872dd7573fc8","keyword":"<span style=\"color:red\">溅射靶</span>材","originalKeyword":"溅射靶材"},{"id":"df72a9db-f42d-482a-93a9-e55b00fd70da","keyword":"电子背散射衍射","originalKeyword":"电子背散射衍射"},{"id":"5fce60c0-fa46-4087-a7a0-d22331852c2d","keyword":"取向差","originalKeyword":"取向差"},{"id":"34e4235a-70bc-4aa1-b535-6a8d4902e0b1","keyword":"织构","originalKeyword":"织构"}],"language":"zh","publisherId":"gjs201403012","title":"EBSD研究高纯金<span style=\"color:red\">溅射靶</span>材的微观组织与织构","volume":"","year":"2014"},{"abstractinfo":"采用超重力旋转填料床反应器氧化减压蒸馏装置,从一次钌盐酸吸收液中氧化蒸馏赶锇、提钌.氧化蒸馏出的RuO4经盐酸吸收还原,制得纯的钌盐酸溶液;经氯化铵结晶沉淀,所得的氯钌酸铵沉淀物在氢气氛围下煅烧还原,制得高纯海绵钌;海绵钌经王水与氢氟酸混合酸煮洗,在氢气氛围下干燥后制得纯钌粉.经辉光放电质谱法—GDMS分析,钌粉纯度达到99.999％以上,可直接用于<span style=\"color:red\">溅射靶</span>材.该工艺采用物理与化学、湿法与火法相结合的提纯技术,制得用于<span style=\"color:red\">溅射靶</span>材的高纯钌粉.超重力旋转填料床反应器氧化蒸馏具有可连续化作业、操作时间短、提钌率高、制备高纯含钌盐酸溶液产品质量稳定的特点.","authors":[{"authorName":"章德玉","id":"69464ff1-1609-4ca8-96cf-8ea27a932fbe","originalAuthorName":"章德玉"},{"authorName":"刘伟生","id":"6647bb60-0ffc-4feb-81fe-db021e03f1a4","originalAuthorName":"刘伟生"}],"doi":"","fpage":"1353","id":"6f3b4b5b-818e-4047-ae78-56a8fb436143","issue":"5","journal":{"abbrevTitle":"XYJS","coverImgSrc":"journal/img/cover/XYJS.jpg","id":"67","issnPpub":"0258-7076","publisherId":"XYJS","title":"稀有金属"},"keywords":[{"id":"29b83212-4e4b-4b2d-9f69-c2c158786f08","keyword":"超重力旋转填料床反应器","originalKeyword":"超重力旋转填料床反应器"},{"id":"442a7bc6-c43f-48a6-b010-a11d4c17f1c5","keyword":"钌盐酸溶液","originalKeyword":"钌盐酸溶液"},{"id":"ef86f81b-4b38-4768-be34-f4bd5b23ebb7","keyword":"氧化","originalKeyword":"氧化"},{"id":"a0cc8859-1f8c-4d1d-9300-05efc24189b4","keyword":"蒸馏","originalKeyword":"蒸馏"},{"id":"f9cf688b-f6de-467d-ab7b-39dd48368cfe","keyword":"高纯钌","originalKeyword":"高纯钌"}],"language":"zh","publisherId":"xyjsclygc201605048","title":"用于<span style=\"color:red\">溅射靶</span>材的高纯钌粉的制备工艺研究","volume":"45","year":"2016"},{"abstractinfo":"影响靶材刻蚀特性的主要因素来自平行靶面的磁场分布,为了得到更优的磁控靶结构参数以实现靶面水平磁感应强度的均匀分布,本文利用Comsol软件对双环磁控<span style=\"color:red\">溅射靶</span>的靶面水平磁感应强度分布进行模拟分析,得出了当内磁环高度h=10 mm,外磁环与靶材间距d=7 mm时的靶面水平磁感应强度分布较为理想.除此之外,还探讨了加装导磁片对靶面水平磁感应强度的影响,结果表明采用适当的导磁片长度、厚度以及导磁片与磁环之间的间距,对靶材的水平磁场强度分布具有调节作用.在工程应用中,技术人员可以事先对靶材结构进行模拟优化以节省生产周期和成本,对实际生产具有指导意义.","authors":[{"authorName":"薛莹洁","id":"cf54da82-d781-4489-b379-c06af6be11c8","originalAuthorName":"薛莹洁"},{"authorName":"陈海峰","id":"e0656250-3875-44c8-a117-f69029e9681b","originalAuthorName":"陈海峰"}],"doi":"","fpage":"1696","id":"deadca6a-62d7-4594-af4e-c357e8ab5c7a","issue":"6","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"d848df89-2dee-4a0d-9790-b7329493f9e9","keyword":"双环磁控<span style=\"color:red\">溅射靶</span>","originalKeyword":"双环磁控溅射靶"},{"id":"523d9a96-65be-4b2a-8e9a-1ed0586c6e1b","keyword":"Comsol模拟","originalKeyword":"Comsol模拟"},{"id":"69ac3e72-b3fb-4ac6-82ab-3ccceeeb7350","keyword":"水平磁感应强度","originalKeyword":"水平磁感应强度"},{"id":"c8d3c685-76ea-46c6-ba54-d0a7cbfa9806","keyword":"结构参数","originalKeyword":"结构参数"}],"language":"zh","publisherId":"rgjtxb98201606046","title":"基于Comsol的双环磁控<span style=\"color:red\">溅射靶</span>的磁场模拟分析","volume":"45","year":"2016"},{"abstractinfo":"涂层钛阳极在使用中会因氧化而失效.为了开发新型的涂层钛阳极,进行了磁控<span style=\"color:red\">溅射</span><span style=\"color:red\">钽</span>作钛阳极底层的研究.通过改变<span style=\"color:red\">溅射</span>功率、氩气压力及<span style=\"color:red\">溅射</span>时间,对不同工艺条件下沉积的<span style=\"color:red\">钽</span>膜进行了分析.用XRD分析了<span style=\"color:red\">溅射</span>层的成分及相结构;通过SEM,AFM观察了<span style=\"color:red\">钽</span>膜的微观形貌和颗粒尺寸;用拉开法测定了<span style=\"color:red\">钽</span>膜的附着力.综合分析了影响<span style=\"color:red\">钽</span>膜质量的因素,推荐磁控<span style=\"color:red\">溅射</span>3～4靘<span style=\"color:red\">钽</span>膜的优化工艺为:功率100～130 W,氩气压力0.1～0.3 Pa,<span style=\"color:red\">溅射</span>时间45～50 min.<span style=\"color:red\">钽</span>膜作为底层可提高二氧化铅阳极的使用寿命40倍以上.","authors":[{"authorName":"潘建跃","id":"fc894212-f1c8-4507-8275-89528789cba0","originalAuthorName":"潘建跃"},{"authorName":"孙凤梅","id":"b0dbbaf7-988d-441d-874a-f0d949b45879","originalAuthorName":"孙凤梅"},{"authorName":"罗启富","id":"ab0bfbf1-588c-4b15-a717-4ecc924f2f61","originalAuthorName":"罗启富"}],"doi":"10.3969/j.issn.1001-1560.2004.10.010","fpage":"26","id":"678da202-75c0-43e8-a014-a84da634460c","issue":"10","journal":{"abbrevTitle":"CLBH","coverImgSrc":"journal/img/cover/CLBH.jpg","id":"7","issnPpub":"1001-1560","publisherId":"CLBH","title":"材料保护"},"keywords":[{"id":"5a49e5e1-db80-4ee6-95fc-cd7f2e3306a6","keyword":"磁控<span style=\"color:red\">溅射</span>","originalKeyword":"磁控溅射"},{"id":"2aff1f72-04f8-4be2-9e28-3a9e0f90c96a","keyword":"<span style=\"color:red\">钽</span>膜","originalKeyword":"钽膜"},{"id":"74cbd03b-45bb-476d-8409-d69d870af480","keyword":"涂层钛阳极","originalKeyword":"涂层钛阳极"},{"id":"dc4eaeca-af69-4463-880b-374dde810334","keyword":"工艺","originalKeyword":"工艺"}],"language":"zh","publisherId":"clbh200410010","title":"钛阳极磁控<span style=\"color:red\">溅射</span><span style=\"color:red\">钽</span>的工艺研究","volume":"37","year":"2004"}],"totalpage":340,"totalrecord":3399}