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We have fabricated and characterized a weak light photodetector in a heterojunction composed of manganite La(0.4)Ca(0.6)MnO(3) and n-type Si. High-sensitivity photoresponse properties were investigated. The responsivities of open-circuit photovoltage and short-circuit photocurrent reach similar to 1000V/mJ and similar to 30A/mJ, respectively, without any amplification bias under irradiation by 20-ps-wide and 355, 532, and 1064-nm-wavelength laser pulses in nanojoule to microjoule order. The present results demonstrate that the manganite-based heterojunction on Si substrate has potential applications in weak light detection from ultraviolet to near-infrared light. (C) 2011 Optical Society of America

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