Influence of CH3SiCl3 Consistency on Growth Process of SiC Film by Kinetic Monte Carlo Method

武汉理工大学学报-材料科学版(英文版), 2012, 27(5): 871-875. doi: 10.1007/s11595-012-0565-5

^1, , ^2, , ^3,

1.School of Materials and Chemical Engineering, Xi'an Technological University, Xi'an 710032, China

2.School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China

3.School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China

基金项目: China(KP200906) the Research Fund of State Key Laboratory of Solidification Processing National Natural Science Foundation of China(50871086) the President Research Foundation of Xi'an Technological University(XAGDXJJ1008)

Influence of CH3SiCl3 Consistency on Growth Process of SiC Film by Kinetic Monte Carlo Method

LIU Cuixia ^1, , YANG Yanqing ^2, , LUO Xian ^3,

1.School of Materials and Chemical Engineering, Xi'an Technological University, Xi'an 710032, China

2.School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China

3.School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China

Keywords： SiC film

参考文献

[1]	Tan C.;Wu XL.;Deng SS.;Huang GS.;Liu XN.;Bao XM. .Blue emission from silicon-based beta-SiC films[J].Physics Letters, A,2003(2/3):236-240.
[2]	刘荣军,周新贵,张长瑞,曹英斌.炉温对化学气相沉积SiC涂层组成及显微结构的影响[J].国防科技大学学报,2002(06):23-26.
[3]	Liu CX;Yang YQ;Zhang RJ;Ren XX .Kinetic Monte Carlo simulation of {111}-oriented SiC film with chemical vapor deposition[J].Computational Materials Science,2008(4):1036-1041.
[4]	闫联生,邹武,宋麦丽,王涛,傅立坤.反应气体配比对C/SiC复合材料ICVI工艺沉积性能的影响[J].固体火箭技术,2002(03):59-62.
[5]	Grujicic M. .Atomic simulation of chemical vapor deposition of (111)-oriented diamond film using a kinetic Monte Carlo method[J].Journal of Materials Science,1999(1):7-20.

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