Effects of Nitridation Temperature on Characteristics of Gallium Nitride Thin Films Prepared Via Two-Step Method

1.Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang,Malaysia

2.Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang,Malaysia

3.Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang,Malaysia

4.Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang,Malaysia

5.Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang,Malaysia

基金项目: The authors are grateful for the financial support from the FRGS Grant (Account No:203/PFIZIK/6711282).

Keywords： Sputtering

[1]	L.S. Chuah;Z. Hassan;S.S. Ng .High carrier concentrations of n- and p-doped GaN on Si(lll) by nitrogen plasma-assisted molecular-beam epitaxy[J].Journal of Materials Research,2007(9):2623-2630.

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