Effects of oxygen pressure on La3GasSiO14 thin films grown by pulsed laser deposition

稀土学报(英文版), 2010, 28(3): 420-423. doi: 10.1016/S1002-0721(09)60125-3

^1, , ^2, , ^3, , ^4, , ^5, , ^6,

1.State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China

2.State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China

3.Institute of Electronic Information,Hangzhou Dianzi University,Hangzhou 310018,China

4.The MOE Key Laboratory of the Mechanical Manufacture and Automation,Zhejiang University of Technology,Hangzhou 310014,China

5.Institute of Electronic Information,Hangzhou Dianzi University,Hangzhou 310018,China

6.State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China

基金项目: the opening project of the MOE Key Laboratory of Mechanical Manufacture and Automation of Zhejiang University of Technology(AMT200506-005)

Effects of oxygen pressure on La3GasSiO14 thin films grown by pulsed laser deposition

ZHANG Wen ^1, , WANG Jiyang ^2, , JI Zhenguo ^3, , LI Hongxia ^4, , LOU Yao ^5, , YAO Shuhua ^6,

1.State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China

2.State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China

3.Institute of Electronic Information,Hangzhou Dianzi University,Hangzhou 310018,China

4.The MOE Key Laboratory of the Mechanical Manufacture and Automation,Zhejiang University of Technology,Hangzhou 310014,China

5.Institute of Electronic Information,Hangzhou Dianzi University,Hangzhou 310018,China

6.State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China

Keywords： thin films

La3GasSiO14 thin films were grown on Si(100)substrates by pulsed laser deposition at several oxygen pressures(5,10,and 20 Pa).The effects of oxygen pressure on the structural and morphological characteristics of the films were investigated using X-ray diffraction,atomic force microscopy,and scanning electron microscopy.X-ray diffraction results showed the intensity of lines from crystallites oriented along the(300)and(220)planes increased as the oxygen pressure was increased to 20 Pa.The deposited films exhibited smooth surface as observed by atomic force microscopy and scanning electron microscopy.Photoluminescence measurements with 260 nm excitation showed that the films had emission in the ultraviolet and blue regions,and the luminescence intensity of the films increased with increasing oxygen pressured.We propose that these emissions originated from self-activated luminescence centers in the tetrahedral and octahedral Ga-O groups.

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Effects of oxygen pressure on La3GasSiO14 thin films grown by pulsed laser deposition

参考文献