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在高浓度砷溶液中采用电沉积法制备As-Sb合金,考察电解液中电流密度、Sb3+浓度、反应温度和盐酸浓度对电沉积过程中电解液成分、槽电压和电流效率的影响,并采用扫描电镜(SEM)、电感藕合等离子体质谱(ICP-MS)和X射线衍射(XRD)分别对沉积物的表面形貌、成分和结构进行分析.结果表明:在所研究的工艺条件下制备的As-Sb合金沉积层均为非晶结构.最优工艺如下:As3+浓度为10 g/L,Sb3+浓度为2g/L,盐酸浓度为4 mol/L,电流密度为4 mA/cm2,温度为20℃,在此条件下电流效率达到94.74%,沉积层含70.26% As和29.74%Sb(质量分数),砷的去除效率较高.

参考文献

[1] 易宇;石靖;田庆华;郭学益.高砷烟尘氢氧化钠-硫化钠碱性浸出脱砷[J].中国有色金属学报,2015(3):806-814.
[2] Giles, D. E.;Mamata Mohapatra;Issa, T. B.;Shashi Anand;Pritam Singh.Iron and aluminium based adsorption strategies for removing arsenic from water.[J].Journal of Environmental Management,201112(12):3011-3022.
[3] Wenjing Shao;Xiaomin Li;Qilin Cao.Adsorption of arsenate and arsenite anions from aqueous medium by using metal(III)-loaded amberlite resins[J].Hydrometallurgy,20081/4(1/4):138-143.
[4] Cuong Manh Nguyen;Sunbaek Bang;Jaeweon Cho.Performance and mechanism of arsenic removal from water by a nanofiltration membrane[J].Desalination: The International Journal on the Science and Technology of Desalting and Water Purification,20091/3(1/3):82-94.
[5] Su, S.;Zeng, X.;Bai, L.;Li, L.;Duan, R..Arsenic biotransformation by arsenic-resistant fungi Trichoderma asperellum SM-12F1, Penicillium janthinellum SM-12F4, and Fusarium oxysporum CZ-8F1[J].Science of the Total Environment,201123(23):5057-5062.
[6] N. Balasubramanian;Toshinori Kojima;C. Srinivasakannan.Arsenic removal through electrocoagulation: Kinetic and statistical modeling[J].Chemical engineering journal,20091/2(1/2):76-82.
[7] Bejan D.;Bunce NJ..Electrochemical reduction of As(III) and As(V) in acidic and basic solutions[J].Journal of Applied Electrochemistry,20036(6):483-489.
[8] He, J.;Reyner, C.J.;Liang, B.L.;Nunna, K.;Huffaker, D.L.;Pavarelli, N.;Gradkowski, K.;Ochalski, T.J.;Huyet, G.;Dorogan, V.G.;Mazur, Y.I.;Salamo, G.J..Band alignment tailoring of InAs_(1- x)Sb_x/GaAs quantum dots: Control of type i to type II transition[J].Nano letters,20108(8):3052-3056.
[9] Bouarissa N.;Charifi Z.;Bachiri R..Electronic properties of AlxGa1-xAsySb1-y alloys lattice-matched to InAs[J].Physica status solidi, B. Basic research,20012(2):293-304.
[10] 曹华珍;万强波;单海鹏;阮慧敏;郑国渠.盐酸体系中电沉积制备砷锑合金[J].中国有色金属学报,2012(12):3548-3554.
[11] Cao, H.;Shan, H.;Ruan, H.;Zheng, G..A study on the evolution of arsine during arsenic electrodeposition: The influence of ammonium citrate[J].Electrochemistry communications,2012:44-47.
[12] CAO Hua-zhen;CHEN Jin-zhong;YUAN Hai-jun;ZHENG Guo-qu.Preparation of pure SbCl3 from lead anode slime bearing high antimony and low silver[J].中国有色金属学报(英文版),2010(12):2397-2403.
[13] CHEN Jin-zhong;CAO Hua-zhen;LI Bo;YUAN Hai-jun;ZHENG Guo-qu;YANG Tian-zu.Thermodynamic analysis of separating lead and antimony in chloride system[J].中国有色金属学报(英文版),2009(03):730-734.
[14] Valentin M. Kozlov;Benedetto Bozzini;Luisa Peraldo Bicelli.Preparation of InAs by annealing of two-layer In-As electrodeposits[J].Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics,20041/2(1/2):152-160.
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