低温过渡液相(TLP)连接是一种在宽禁带半导体互连领域极具应用潜力的高温电子封装技术.本文研究了Ag/Sn体系在不同温度下进行TLP连接时界面金属间化合物(IMCs)的生长机理.结果表明:Ag3Sn晶粒主要呈扇贝状形态,而棱柱状、针状、中空柱状、板状和线状等形态也会产生;然而,随着保温时间的延长波浪状Sn/Ag3Sn界面将变得更加平坦,分析表明这与晶粒粗化及基板Ag原子各向异性的扩散流有关;同时,在Ag3Sn晶粒表面观察到大量纳米Ag3Sn颗粒形成,它们形核长大于液相富Ag区,并在凝固过程中被Ag3Sn晶粒吸附沉淀所致.在动力学方面,Ag3Sn晶粒生长遵循抛物线规律,主要受到体积扩散控制,且250、280和320°C下生长速率常数分别为5.83×10?15、7.83×10?15和2.83×10?14 m2/s,反应活化能为58.89 kJ/mol.
Transient liquid phase (TLP) bonding is a potential high-temperature (HT) electron packaging technology that is used in the interconnection of wide band-gap semiconductors. This study focused on the mechanism of intermetallic compounds (IMCs) evolution in Ag/Sn TLP soldering at different temperatures. Experimental results indicated thatmorphologies of Ag3Sn grains mainly were scallop-type, and some other shapes such as prism, needle, hollow column, sheet and wire of Ag3Sn grains were also observed, which was resulted from their anisotropic growths. However, the scallop-type Ag3Sn layer turned into more planar with prolonging soldering time, due to grain coarsening and anisotropic mass flow of Ag atoms from substrate. Furthermore, a great amount of nano-Ag3Sn particles were found on the surfaces of Ag3Sn grains, which were formed in Ag-rich areas of the molten Sn and adsorbed by the Ag3Sn grains during solidification process. Growth kinetics of the Ag3Sn IMCs in TLP soldering followed a parabolic relationship with soldering time, and the growth rate constants of 250, 280 and 320 °C were calculated as 5.83×10?15 m2/s, 7.83×10?15 m2/s and 2.83×10?14 m2/s, respectively. Accordingly, the activation energy of the reaction was estimated about 58.89 kJ/mol.
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