Current spin polarization and spin injection efficiency in ZnO-based ferromagnetic semiconductor junctions

金属学报(英文版), 2009, 22(2): 153-160. doi: 10.1016/S1006-7191(08)60083-6

^1, , ^2, , ^3, , ^4, , ^5, , ^6,

1.Institute of Microstructure and Properties of Advanced Materials,Beijing University of Technology,Beijing 100124,China;Institute of Biophysics,Chinese Academy of Sciences,Beijing 100101,China;School of Physics and National Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China

2.Institute of Microstructure and Properties of Advanced Materials,Beijing University of Technology,Beijing 100124,China

3.School of Physics and National Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China

4.School of Physics and National Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China

5.School of Physics and National Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China

6.School of Physics and National Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China

基金项目: the State Key Project of Fundamental Research of China(2007CB924903;NSFC 50572053)

Current spin polarization and spin injection efficiency in ZnO-based ferromagnetic semiconductor junctions

Gang JI ^1, , Ze ZHANG ^2, , Yanxue CHEN ^3, , Shishen YAN ^4, , Yihua LIU ^5, , Liangmo MEI ^6,

2.Institute of Microstructure and Properties of Advanced Materials,Beijing University of Technology,Beijing 100124,China

3.School of Physics and National Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China

4.School of Physics and National Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China

5.School of Physics and National Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China

6.School of Physics and National Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China

Keywords： Spin injection

[FeNi(3 nm)/Zn1-xCoxO(3 nm)]2/ZnO(d nm)/[Zn1-xCoxO(3 nm)/Co(3 nm)]2 (d=3 and 10) semiconductor junctions were prepared by magnetron sputtering system and photolithography. The spin valve effect was observed in these junctions because the utility of the ferromagnetic composite layers acted as soft and hard magnetic layers. The electrical detection was performed by measuring the magnetoresistance of these junctions to investigate the current spin polarization α<,sc> in the ZnO layer and the spin injection efficiency η of spin-polarized electrons, α<,sc> was reduced from 11.7% (and 10.5%) at 90 K to 7.31% (and 5.93%) at room temperature for d=3 (and d=10). And η was reduced from 39.5% (and 35.5%) at 90 K to 24.7% (and 20.0%) at room temperature for d=3 (and d=10).

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Current spin polarization and spin injection efficiency in ZnO-based ferromagnetic semiconductor junctions

参考文献