Study of the dose rate effect of 180 nm nMOSFETs

1.The State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology Shanxi Xi'an 710613, China

2.The State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology Shanxi Xi'an 710613, China

3.The State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology Shanxi Xi'an 710613, China

4.The State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology Shanxi Xi'an 710613, China

5.The State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology Shanxi Xi'an 710613, China

6.The State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology Shanxi Xi'an 710613, China

7.The State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology Shanxi Xi'an 710613, China

基金项目: Supported by National Science Foundation of China (11305126)

[1]	Pease R.L. .Total ionizing dose effects in bipolar devices and circuits[J].IEEE Transactions on Nuclear Science,2003(3):539-551.
[2]	HE Sao-Ping,YAO Zhi-Bin,ZHANG Feng-Qi.A comparison of ionizing radiation damage in CMOS devices from 60Co gamma rays, electrons and protons[J].中国物理C（英文版）,2009(06):436-439.
[3]	MENG Xiang-Ti,HUANG Qiang,MA Yan-Xiu,ZHENG Yong-Nan,FAN Ping,ZHU Sheng-Yun.A study of radiation effects of 9 and 12 MeV protons on Chinese CMOS image sensor degradation[J].中国物理C(英文版),2008(06):442-445.
[4]	McLain M.;Barnaby H. J.;Holbert K. E.;Schrimpf R. D.;Shah H.;Amort A.;Baze M.;Wert J. .Enhanced TID Susceptibility in Sub-100 nm Bulk CMOS I/O Transistors and Circuits[J].IEEE Transactions on Nuclear Science,2007(6):2210-2217.
[5]	Barnaby H. J. .Total-Ionizing-Dose Effects in Modern CMOS Technologies[J].IEEE Transactions on Nuclear Science,2006(6):3103-3121.
[6]	McLain M.;Barnaby H. J.;Holbert K. E.;Schrimpf R. D.;Shah H.;Amort A.;Baze M.;Wert J. .Enhanced TID Susceptibility in Sub-100 nm Bulk CMOS I/O Transistors and Circuits[J].IEEE Transactions on Nuclear Science,2007(6):2210-2217.

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