Low-frequency and high-frequency capacitance-voltage curves of Metal-Oxide-Semiconductor Capacitors are presented to illustrate giant electron and hole trapping capacitances at many simultaneously present two-charge-state and one-trapped-carrier,or one-energy-level impurity species.Models described include a donor electron trap and an acceptor hole trap,both donors,both acceptors,both shallow energy levels,both deep,one shallow and one deep,and the identical donor and acceptor.Device and material parameters are selected to simulate chemically and physically realizable capacitors for fundamental trapping parameter characterizations and for electrical and optical signal processing applications.
参考文献
| [1] | Jie Binbin and Sah Chihtang,“MOS Capacitance-Voltage Characteristics from Electron-Trapping at Dopant Donor Impurity,”Journal of Semiconductors,32(4),041001,1-9,April 2011.This will be referred to as Paper I or Part I of this series of articles on trapping capacitances,published or to be published in this journal. |
| [2] | Jie Binbin and Sah Chihtang,“MOS Capacitance-Voltage Characteristics Ⅱ.Sensitivity of Electronic Trappings at Dopant Impurity from Parameter Variations,” Journal of Semiconductors,32(12),121001,1-11.December 2011.Preceding article.This will be referred to as Paper Ⅱ or Part Ⅱ of this series of articles on trapping capacitances,published or to be published in this journal. |
| [3] | William Shockley,Electrons and Holes in Semiconductors,558pp.D.Van Nostrand Company,Inc.New York.1950.Third edition,reprinted January 1953.See his prophetic Nomogram given in Appendix D on the inside back cover,titled Energy Conversion Chart. |
| [4] | Sah Chihtang,Fundamentals of Semiconductor Materials Physics,(FSMP),to be published by the World Scientific Publishing Company in 2012 or 2013.Advanced version of the lecture notes were handed out to the attendees,graduate students,post-doctorates,and visiting and local professors,at the graduate semiconductor physics and electrical engineering course taught by the senior author for 50 years at two American universities,during 1961 to 1988 at the University of Illinois in Urbana-Champaign,and during 1988 to 2010 at the University of Florida,which were attended by about 1000 graduate students registered for credit in physics,electrical and computer engineering,chemistry,chemical engineering,materials science and computer science and engineering. |
| [5] | Chih-Tang Sah,Fundamentals of Solid-State Electronics,1001pp.World Scientific Publishing Company,Singapore.1991.Values of the numerical constants and additional numerical solutions are given in Refs.[6]and[7].More accurate recent values of the fundamental constants,q,h,kB,and mo in the computation presented in this report are taken from Peter J.Mohr,Barry N.Taylor and David B.Newell,“CODATA Recommended Values of the Fundamental Physical Constants:2006,” Reviews of Modern Physics,80(2),633-730,April-June,2008,and also from David R.Lide,Editor-in-Chief,Handbook of Chemistry and Physics,92th Edition,2011-2012,CRC Press,Taylor & Francis Group,Boca Raton,Florida. |
| [6] | Chih-Tang Sah,Fundamentals of Solid-State Electronics,1001pp.World Scientific Publishing Company,Singapore.1991.Values of the numerical constants and additional numerical solutions are given in Refs.[6]and[7].More accurate recent values of the fundamental constants,q,h,kB,and mo in the computation presented in this report are taken from Peter J.Mohr,Barry N.Taylor and David B.Newell,“CODATA Recommended Values of the Fundamental Physical Constants:2006,” Reviews of Modern Physics,80(2),633-730,April-June,2008,and also from David R.Lide,Editor-in-Chief,Handbook of Chemistry and Physics,92th Edition,2011-2012,CRC Press,Taylor & Francis Group,Boca Raton,Florida. |
| [7] | Chih-Tang Sah,Fundamentals of Solid-State Electronics,1001pp.World Scientific Publishing Company,Singapore.1991.Values of the numerical constants and additional numerical solutions are given in Refs.[6]and[7].More accurate recent values of the fundamental constants,q,h,kB,and mo in the computation presented in this report are taken from Peter J.Mohr,Barry N.Taylor and David B.Newell,“CODATA Recommended Values of the Fundamental Physical Constants:2006,” Reviews of Modern Physics,80(2),633-730,April-June,2008,and also from David R.Lide,Editor-in-Chief,Handbook of Chemistry and Physics,92th Edition,2011-2012,CRC Press,Taylor & Francis Group,Boca Raton,Florida. |
| [8] | Chih-Tang Sah,Fundamentals of Solid-State Electronics-Study Guide,423pp.World Scientific Publishing Company,Singapore.1993. |
| [9] | Chih-Tang Sah,Fundamentals of Solid-State Electronics-Solution Manual,200pp.World Scientific Publishing Company,Singapore.1996. |
| [10] | Jie Binbin and Sah Chihtang,“MOS Capacitance-Voltage Characteristics IV.Trapping Capacitance from 3-Charge-State Impurities,” Journal of Semiconductors,33(1),011001,January 2012,next issue.This will be referred to as Paper Ⅳ or Part Ⅳ of this series of articles on trapping capacitances,published or to be published in this journal. |
| [11] | Jie Binbin and Sah Chihtang,“MOS Capacitance-Voltage Characteristics V.Methods to Enhance the Trapping Capacitance,”Journal of Semiconductors,33(1),011002,January 2012,next issue.This will be referred to as Paper Ⅴ or Part Ⅴ of this series of articles on trapping capacitances,published or to be published in this journal. |
| [12] | Jie Binbin and Sah Chihtang,“MOS Capacitance-Voltage Characteristics Ⅵ.Applications of the Trapping Capacitance,” Journal of Semiconductors,33(2),021001,February 2012.This will be referred to as Paper Ⅵ or Part Ⅵ of this series of articles on trapping capacitances,published or to be published in this journal. |
| [13] | The readers can greatly enlarge the figures,by 200％ to 500％,to see the 1016 cm-3 CV curve and the rather small labels on each curve,still in sharp focus,via displaying in the PDF format of the digital copy of this article,online,or downloaded from the Journal of Semiconductor website.[www.jos.ac.cn] |
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