We have investigated a SiO2/SiNx/SiO2 composite insulation layer structured gate dielectric for an organic thin film transistor (OTFT) with the purpose of improving the performance of the SiO2 gate insulator.The SiO2/SiNx/SiO2 composite insulation layer was prepared by magnetron sputtering.Compared with the same thickness of a SiO2 insulation layer device,the SiO2/SiNx/SiO2 composite insulation layer is an effective method of fabricating OTFT with improved electric characteristics and decreased leakage current.Electrical parameters such as carrier mobility by field effect measurement have been calculated.The performances of different insulating layer devices have been studied,and the results demonstrate that when the insulation layer thickness increases,the off-state current decreases.
参考文献
| [1] | Drury C J,Mutsaers C M J,Hart C M,et al.Low-cost all-polymer integrated circuits.Appl Phys Lett,1998,73:108 |
| [2] | Sheraw C D,Zhou L,Huang J R,et al.Organic thin-film transistor-driven polymer-dispersed liquid crystal displays on flexible polymeric substrates.Appl Phys Lett,2002,80:1088 |
| [3] | Dimitrakopoulos C D,Purushothaman S,Kymissis J,et al.Lowvoltage organic transistors on plastic comprising high-dielectric constant gate insulators.Science,1999,183:822 |
| [4] | Yuan J,Zhang J,Wang J,et al.Bottom-contact organic fieldeffect transistors having low-dielectric layer under source and drain electrodes.Appl Phys Lett,2003,82:3967 |
| [5] | Horowitz G,Lang P,Mottaghi M,et al.Extracting parameters from the current-voltage characteristics of organic field-effect transistors.Adv Funct Mater,2004,14:1069 |
| [6] | Tang Weizhong.Fabrication,technology and applications of thin film materials.1st ed.Beijing:China Metallurgical Industry Press,1998:41 |
| [7] | Jin Ziying two,ed.Tian Jianmin,translated.Liquid crystal displays.Beijing:Publishing House of Electronics Industry,1991:247 |
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