Molecular beam epitaxy growth of an In<,x>Ga<,1-x>As/GaAs quantum well (QW) structure (x equals to 0.17 or 0.3) on offcut (100) Ge substrate has been investigated. The samples were characterized by atomic force microscopy, photoluminescence (PL), and high resolution transmission electron microscopy. High temperature annealing of the Ge substrate is necessary to grow GaAs buffer layer without anti-phase domains. During the subsequent growth of the GaAs buffer layer and an ln<,x>Ga<,1-x>As/GaAs QW structure, temperature plays a key role. The mechanism by which temperature influences the material quality is discussed. High quality ln<,x>Ga<1-x>As/GaAs QW structure samples on Ge substrate with high PL intensity, narrow PL linewidth and fiat surface morphology have been achieved by optimizing growth temperatures. Our results show promising device applications for Ⅲ-Ⅴ compound semiconductor materials grown on Ge substrates.
参考文献
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