An electroless deposition (ELD) method is introduced to fabricate a metal nanoplug for its advantages of simplicity, low cost and auto-selectivity. It was demonstrated that nanoplugs of less than 50 nm in diametercan be fabricated by ELD nickel on various substrates, such as silicon, tungsten and titanium nitride. The main composition of the ELD nanoplug was characterized as nickel by an energy dispersive X-ray microanalyzer. A functional vertical phase-change random access memory (PCRAM) device with a heater diameter of around 9/μm was fabricated by using the ELD method. The I-V characteristics demonstrated that the threshold current is only 90.8 μA. This showed that the ELD process can satisfy the demands of PCRAM device application, as well as device performance improvement. The ELD process provides a promising method for the simple and low-cost fabrication of metal nanoplugs.
参考文献
| [1] | Sander M S,Prieto A L,Gronsky R,et al.Fabrication of highdensity,high aspect ratio,large-area bismuth telluride nanowire arrays by electrodeposition into porous anodic alumina templates.Adv Mater,2002,14(9):665 |
| [2] | Sander M S,Tan L S.Nanoparticle arrays on surfaces fabricated using anodic alumina film as templates.Adv Func Mater,2003,13(5):393 |
| [3] | Zhang Z,Liu L,Shimizu T,et al.Synthesis of silicon nanotubes with cobalt silicide ends using anodized aluminum oxide template.Nanotechnology,2010,21:055603 |
| [4] | Chang S W,Oh J,Boles S T,et al.Fabricated of silicon nanopillar-based nanocapacitor arrays.Appl Phys Lett,2010,96:153108 |
| [5] | Zhang Y,Kim S B,McVittie J P,et al.An integrated phase change memory cell with Ge nanowire diode for cross-point memory.Symposium on VLSI Tech Dig of Tech,2007,6B-2:98 |
| [6] | Song Y J,Ryoo K C,Hwang Y N,et al.Highly reliable 256Mb PRAM with advanced ring contact technology and novel encapsulating technology.Symposium on VLSI Tech Dig of Tech,2006:118 |
| [7] | Nirschl T,Philipp J B,Happ T D,et al.Write strategies for 2 and 4-bit multi-level phase-change memory,lnt Electron Devices Meet,2008:461 |
| [8] | Chien W C,Chen Y C,Lai E K,et al.Unipolar switching behaviors of RTO WOx RRAM.Electron Device Lett,2010,31(2):126 |
| [9] | Kong Y C,Yu D P,Zhang B,et al.Ultraviolet-emitting ZnO nanowires synthesized by a physical vapor deposition approach.Appl Phys Lett,2011,78(4):407 |
| [10] | Gao X,Liu L,Birajdar B,et al.High-density periodically ordered magnetic cobalt ferrite nanodots arrays by template-assisted pulsed laser deposition.Adv Func Mater,2009,19:1 |
| [11] | Chiou W T,Wu W Y,Ting J M.Growth of single crystal ZnO nanowires using sputter deposition.Diamond and Related Materials,2003,12:1841 |
| [12] | Liu K,Nogues J,Leighton C,et al.Fabrication and thermal stability of arrays of Fe nanodots.Appl Phys Lett,2002,81(23):4434 |
| [13] | Yuan X Y,Xie T,Wu G S,et al.Fabrication of Ni-W-P nanowires arrays by electroless deposition and magnetic studies.Physica E;2004,23:75 |
| [14] | Almog R O,Sverdlov Y,Goldfarb I,et al.CoWBP capping barrier layer for sub 90 um Cu interconnects.Microelectron Eng,2007,84(11):2450 |
| [15] | Shingnbara S,Wang Z,Yaegashi O,et al.Bottom-up fill copper in high aspect ratio via holes by electroless plating.Tech Dig Int Electron Devices Meet,2003,6.3.1-6.3.4:147 |
| [16] | Li Ning.Electroless deposition technology.Beijing:Chemical Industry,2004 |
| [17] | Dulin A,Sverdlov Y,Torchinsky I,et al.NiSi contact metallization using electroless Ni deposition on Pd-activated selfassembled monolayer (SAM) on p-type Si(100).Microelectron Eng,2007,84(11):2506 |
| [18] | Haag S,Burgard M,Ernst B.Pure nickel coating on a mesoporous alumina membrane:preparation by electroless plating and characterization.Surface and Coatings Technology,2006,201:2166 |
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%