This study investigated the resistive switching characteristics of the Ni/HfO2/Pt structure for nonvolatile memory application.The Ni/HfO2/Pt device showed bipolar resistive switching (RS) without a forming process,and the formation and rupture of conducting filaments are responsible for the resistive switching phenomenon,In addition,the device showed some excellent memory performances,including a large on/offratio (＞ 3 × 105),very good data retention (＞ 103 s @ 200 ℃) and uniformity of switching parameters.Considering these results,the Ni/HfO2/Pt device has the potential for nonvolatile memory applications.
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