参考文献
| [1] | Bertness K A,Kurtz S R,Friedman D J,et al.29.5％-efficient GaInP/GaAs tandem solar cells.Appl Phys Lett,1994,65:989 |
| [2] | Takamoto T,Ikeda E,Kurita H,et al.Over 30％ efficient InGaP/GaAs tandem solar cells.Appl Phys Lett,1997,70:331 |
| [3] | Garcia I,Rey-Stolle I,Galiana B,et al.A 32.6％ efficient latticematched dual-junction solar cell working at 1000 suns.Appl Phys Lett,2009,94:053509 |
| [4] | King R R,Law D C,Edmondson K M,et al.40％ efficient metamorphic GaInP/InGaAs/Ge multijunction solar cells.Appl Phys Lett,2007,90:183516 |
| [5] | Kurtz S R,Olson J M,Kibbler A.Modeling of tow-junction,series-connected tandem solar cells using top cell thickness as an adjustable parameter.J Appl Phys,1990,68:1890 |
| [6] | Ragay F W,Leys M R,Nouwens P A M,et al.A MBE-grown high-efficiency GaAs solar cell with a directly deposited aluminum front contact.IEEE Electron Device Lett,1992,13:618 |
| [7] | Chuang H L,Klausmeier-Brown M E,Melloch M R,et al.Effective minority-carrier hole confinement of Si-doped,n+-n GaAs homojunction barriers.J Appl Phys,1989,66:273 |
| [8] | Tobin S P,Vernon C B,Wojtczuk S J,et al.Assessment of MOCVD-and MBE-grown GaAs for high-efficiency solar cell applications.IEEE Trans Electron Devices,1990,37:469 |
| [9] | Leinonan P,Pessa M,Haapamaa J,et al.Advances in production MBE grown GaInP/GaAs cascade solar cells.IEEE Xplore-Photovoltaic Specialists Conference,2000,DOI 10.1109/PVSC.2000.916098 |
| [10] | Wicks G W,Koch M W,Varriano J A,et al.Use of a valved,solid phosphorus source for the growth of Ga0.5In0.5P and Alo.5Ino.5P by molecular beam epitaxy.Appl Phys Lett,1991,59:342 |
| [11] | Yoon S F,Mah K W,Zheng H Q.Effects of Ⅷ ratio on the properties of InGaP grown by a valved phosphorous cracker cell in solid source MBE.Jpn J Appl Phys,1999,38:5740 |
| [12] | Lu S L,Ji L,He W,et al.High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy.Nanoscale Res Lett,2011,6:576 |
| [13] | He W,Lu S L,Dong J R,et al.Structural and optical properties of GaInP grown on germanium by metal-organic chemical vapour deposition.Appl Phys Lett,2010,97:121909 |
| [14] | Bauhuis G J,Mulder P,Haverkamp E J,et al.26.1％ thin-film GaAs solar cell using epitaxial lift-off.Solar Energy Materials and Solar Cells,2009,93:1488 |
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