参考文献
| [1] | Lenka T R,Panda A K.Role ofnanoscale AlN and InN for the microwave characteristics of A1GaN/(Al,In)N/GaN-based HEMT.Semiconductors,2011,45(9):1211 |
| [2] | Lenka T R,Panda A K.Characteristics study of 2DEG transport properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT.Semiconductors,2011,45(5):660 |
| [3] | Lenka T R,Panda A K.Self-consistent subband calculations of Alx Ga 1-x N/(AlN)/GaN-based high electron mobility transistor.Adv Mater Research,2011,159:342 |
| [4] | Ibbetson J P,Fini P T,Ness K D,et al.Polarization effects,surface states,and the source of electrons in AlGaN/GaN heterostructure field effect transistors.Appl Phys Lett,2000,77(2):250 |
| [5] | Wang R,Li G,Karbasian G,et al.InGaN channel highelectron mobility transistors with InAlGaN barrier and fT/fmax of 260/220 GHz.Appl Phys Express,2013,6:016503 |
| [6] | Simin G,Hu X,Tarakji A,et al.AlGaN/InGaN/GaN double heterostructure field effect transistor.Jpn J Phys,2001,40:L1142 |
| [7] | Liu J,Zhou Y,Zhu J,et al.AlGaN/GaN/InGaN/GaN DH-HEMTs with an InGaN notch for enhanced carrier confinement.IEEE Electron Device Lett,2006,27(1):10 |
| [8] | Kim B H,Park S H,Lee J H,et al.Effect of In composition on two-dimensional electron gas in wurtzite AlGaN/InGaN heterostructures.Chin Phys Lett,2010,27(11):118501 |
| [9] | Zhang H,Miller E J,Yu E T,et al.Measurement of polarization charge and conduction-band offset at InxGa1-xN/GaN heterojunction interfaces.Appl Phys Lett,2004,84(23):4644 |
| [10] | Song J,Xu F,Huang C,et al.Different temperature dependence of carrier transport properties between AlxGa1-xN/InyGa1-yN/GaN and AlxGa1-xN/GaN heterostructures.Chin Phys B,2011,20(5):057305 |
| [11] | Tang J,Wang X,Chen T,et al.AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD.IEEE 9th International Conference on Solid-State and Integrated-Circuit Technology,2008:1114 |
| [12] | Lan G,Xu Y,Chen Y,et al.High frequency noise pertormance of AlGaN/InGaN/GaN HEMTs with AlN interlayer.IEEE International Conference on Microwave and Millimeter Wave Technology (ICMMT),2012:1 |
| [13] | Chiang C Y,Hsu H T,Chang E Y.Effect of field plate on the RF performance of AlGaN/GaN HEMT devices.Physics Procedia,2012,25:86 |
| [14] | Okamoto N,Hoshino K,Hara N,etal.MOCVD-grown InGaN-channel HEMT structures with electron mobility of over 1000 cm2/(V·s).J Cryst Growth,2004,272(1-4):278 |
| [15] | Liu G G,Wei K.A1GaN/GaN HEMT with 200 GHz fmax on sapphire with InGaN back-barrier.Journal ofInfrared Millim Waves,20l1,30(4):289 |
| [16] | Lanford W,Kumar V,Schwindt R,et a1.AlGaN/InGaN HEMTs for RF current collapse suppression.Electron Lett,2004,40(12):771 |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%