参考文献
| [1] | Coe D J.High voltage semiconductor device.USA Patent,No.4754310,1988 |
| [2] | Chen X B.Semiconductor power devices with alternating conductivity type high voltage breakdown regions.USA Patent,No.5216275,1993 |
| [3] | Chen X B.Theory of a novel voltage-sustaining composite buffer (CB) layer for power devices.Chinese Journal of Electronics,1998,7(3):211 |
| [4] | Lorenz L,Deboy G,Knapp A,et al.COOLMOSTM-a new milestone in high voltage power MOS.Proc ISPSD,1999:3 |
| [5] | Saito W,Omura I,Aida S,et al.600 V semi-superjunction MOSFET.Proc ISPSD,2003:45 |
| [6] | Saito W,Omura I,Aida S,et al.Semisuperjunction MOSFETs:new design concept for lower on-resistance and softer reverserecovery body diode.IEEE Trans Electron Devices,2003,50(8):1801 |
| [7] | Ono S,Saito W,Takashita M,et al.Design concept of n-buffer layer (n-bottom assist layer) for 600 V-class semi-super junction MOSFET.Proc ISPSD,2007:25 |
| [8] | Napoli E,Wang H,Udrea F.The effect of charge imbalance on superjunction power devices:an exact analytical solution.IEEE Electron Device Lett,2008,29(3):249 |
| [9] | Wang H,Napoli E,Udrea F.Breakdown voltage for superjunction power devices with charge imbalance:an analytical model valid for both punch through and non punch through devices.IEEE Trans Electron Devices,2009,56(12):3175 |
| [10] | Synopsys,Taurus Medici User Guide,2010 |
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