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[1] Magnelli L,Crupi F,Corsonello P,et al.A 2.6 nW,0.45 V temperature-compensated subthreshold CMOS voltage reference.IEEE J Solid-State Circuits,2011,46(2):465
[2] Su Q,Yin Y,Deng H.Design of a low voltage high precision CMOS bandgap reference.ICEMI'09 9th International Conference on Electronic Measurement & Instruments,2009:2
[3] Liu Z,Cheng Y.A sub-1 V CMOS bandgap reference with highorder curvature compensation.IEEE International Conference on Electron Devices and Solid-State Circuits,2009:441
[4] Ker M D,Chen J S.New curvature compensated technique for CMOS bandgap reference with sub-1-V operation.IEEE Trans Circuits Syst Ⅱ,Analog Digit Signal Process,2006,53(8):667
[5] Li Hua,Lu Jian,Jiang Yadong.A curvature-compensated CMOS bandgap voltage reference for high precision applications.Microelectronics,2009,39(1):38
[6] Jiang Tao,Yang Huazhong.Bandgap reference design by means of multiple point curvature compensation.Chinese Journal of Semiconductors,2007,28(4):490
[7] Wang Hongyi,Lai Xinquan,Li Yushan,et al.A piecewise-linear compensated bandgap reference.Chinese Journal of Semiconductors,2004,25(7):771
[8] Ming Xin,Lu Yang,Zhang Bo,et al.A 2.8 ppm/℃ high PSRR BiCMOS bandgap voltage reference.Journal of Semiconductors,2009,30(9):095014
[9] Banba H,Shiga H,Umezawa A,et al.A CMOS bandgap reference circuit with sub-1-V operation.IEEE J Solid-State Circuits,1999,34(5):670
[10] Razavi B.Design of analog CMOS integrated circuits.Boston:McGraw Hill,2000
[11] Leung K N,Mok P K T.A 2-V 23-μA 5.3-ppm/℃ curvaturecompensated CMOS bandgap voltage reference.IEEE J SolidState Circuits,2003,38(3):561
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