参考文献
| [1] | Dennard R H,Gaensslen F H,Yu H N,et al.Design of ionimplanted MOSFET's with very small physical dimensions.IEEE J Solid-State Circuits,1974,SC-9:256 |
| [2] | Cappy A,Carres B,Fanquembergues R,et al.Comparative potential performance of Si,GaAs,GaInAs,InAs submicrometergate FET's.IEEE Trans Electron Devices,1980,ED-27:2158 |
| [3] | Long W,Ou H,Kuo J M,et al.Dual material gate (DMG) fieldeffect transistor.IEEE Trans Electron Devices,1999,46:865 |
| [4] | Saxena M,Haldar S,Gupta M,et al.Physics-based analytical modeling of potential and electrical field distribution in dual material gate (DMG)-MOSFET for improved hot electron effect and carrier transport efficiency.IEEE Trans Electron Devices,2002,49:1928 |
| [5] | Kumar M J,Chaudhry A.Two-dimensional analytical modeling of fully depleted DMG SOI MOSFET and evidence for diminished SCEs.IEEE Trans Electron Devices,2004,51:569 |
| [6] | Chiang T K.A new two-dimensional analytical subthreshold behavior model for short-channel tri-material gate-stack SOI MOSFET's.Microelectron Reliab,2009,49:113 |
| [7] | Saxena R S,Kumar M J.Dual-material-gate technique for enhanced transconductance and breakdown voltage of trench power MOSFETs.IEEE Trans Electron Devices,2009,56:517 |
| [8] | Chiang T K.A new compact subthreshold behavior model for dual-material surrounding gate (DMSG) MOSFETs.Solid-State Electron,2009,53:490 |
| [9] | Sharma R K,Gupta R,Gupta M,et al.Dual-material doublegate SOI n-MOSFET:gate misalignment analysis.IEEE Trans Electron Devices,2009,56:1284 |
| [10] | Saurabh S,Kumar M J.Novel attributes of a dual material gate nanoscale tunnel field-effect transistor.IEEE Trans Electron Devices,2011,58:404 |
| [11] | Li Zunchao,Jiang Yaolin,Wu Jianmin.Dual material gate SOI MOSFET with a single halo.Chinese Journal of Semiconductors,2007,28:327 |
| [12] | Luan Suzhen,Liu Hongxia,Jia Renxu,et al.A two-dimensional subthreshold current model for dual material gate SOI nMOS-FETs with asymmetric halo.Journal of Semiconductors,2008,29:746 |
| [13] | Li Jin,Liu Hongxia,Li Bin,et al.Two-dimensional threshold voltage analytical model of DMG strained-silicon-on-insulator MOSFETs.Journal of Semiconductors,2010,31:084008 |
| [14] | Li Jin,Liu Hongxia,Yuan Bo,et al.A two-dimensional analytical model of fully depleted asymmetrical dual material gate doublegate strained-Si MOSFETs.Journal of Semiconductors,2011,32:044005 |
| [15] | Cao Lei,Liu Hongxia,Wang Guanyu.Study of modeling for hetero-material gate fully depleted SSDOI MOSFET.Acta Phys Sin,2012,61:017105 |
| [16] | Polihchuk I,Ranade P,King T J,et al.Dual work function metal gate CMOS technology using metal inter-diffusion.IEEE Electron Device Lett,2001,22:444 |
| [17] | Young K K.Short-channel effect in fully depleted SOI MOS-FETs.IEEE Trans Electron Devices,1989,36:399 |
| [18] | Suzuki K.Short-channel MOSFET using a universal channel depletion width parameter.IEEE Trans Electron Devices,2000,47:1202 |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%