半导体学报（英文版）, 2015, 36(7): 83-89. doi: 10.1088/1674-4926/36/7/074006

基金项目: Project supported by the National Natural Science Foundation of China (No.61204086).

Optimized power simulation of AlGaN/GaN HEMT for continuous wave and pulse applications

Keywords： AlGaN/GaN HEMT

参考文献

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[6]	Angelov I.;Zirath H..A new empirical nonlinear model for HEMT and MESFET devices[J].IEEE Transactions on Microwave Theory and Techniques,199212(12):2258-2266.
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