材料期刊网

Electronic and optical properties are obtained with the increase in indium alloy content (x) in a Ga1-xInxN/Al0.2Ga0.8N quantum dot.The barrier height with the different In alloy contents is applied to acquire the confinement potentials.The results are obtained taking into consideration geometrical confinement effect.The optical absorption coefficient with the photon energy is observed in a Ga1-xInxN/Al0.2Ga0.sN quantum dot.The optical output with the injection current density and the threshold optical pump intensity for various In alloy contents are studied.The differential gain as functions of indium alloy content,charge density and the dot radii in the Ga1-xInxN/Al0.2Ga0.8N quantum dot are investigated.The exciton binding energy is calculated in order to obtain the exciton density,the optical gain and the threshold current density in the Ga1-xInxN/Al0.2In0.8N quantum dot.The results show that the red shift energy with an increase in In alloy content is found and the differential gain increases with the charge carrier density.