中国科学院近代物理研究所材料研究中心开展了对静态随机存储器(Static Random Access Memory， SRAM)单粒子效应(Single Event Effects， SEEs)的深入研究。材料中心目前拥有的两套SRAM单粒子检测系统各自具有一定的局限性，所以又提出了一种改进的SRAM SEE检测方法，并研制了相关电路。该检测系统在兰州重离子研究装置(HIRFL)提供的束流辐射终端上进行了多次实验，获得了一批实验数据。其中包括129 Xe束流辐照条件下，对65 nm SRAM单粒子翻转的研究；12 C束流辐照条件下，对65，130和150 nm商用错误纠正编码加固SRAM SEE的研究；129Xe束流辐照条件下，对普通商用SRAM单粒子锁定的研究等。实验验证了该检测系统的有效性和可靠性，为开展SRAM SEE的研究提供了重要的检测平台，并为以后开展更复杂器件SEE的研究提供了实验经验和技术基础。
The material research center in Institute of Modern Physics, Chinese Academy of Sciences (IMP,CAS) have made a fruitful achievements in the research of single event effects(SEEs) occurring in static random access memory (SRAM). However, there are some drawbacks exist in the two systems of detecting SEE owning by the material research center. Therefore, an improved method of detecting SEE is proposed, and the method functionality is implemented in a circuit. Further, a sequence of experiments are carried out in the beam radiation terminal of the Heavy Ion Facility in Lanzhou (HIRFL), and a bunch of experimental data are collected. The irradiation tests were carried out using 129 Xe for the SEE research of 65 nm SRAMs;Using 12 C for the SEE research of the 65, 130 and 150 nm SRAMs with ECC module;Using 129Xe for the SEL research of the common commercial SRAMs and so on. These experiments provide a statistical evidence of the effectiveness and robustness of the improved system. It is believed that the proposed system will be beneficial for detecting SEE in diverse settings, and it could be taken advantage of as a platform for future research on SEE tests in more intricate devices.
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