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对1.55μm波长DFB结构的InGaAsP多量子阱激光二极管开展电子和60Co-γ射线辐照试验。试验结果表明,激光二极管的斜度效率主要受带电粒子沉积的电离总剂量影响,而阈值电流和光功率主要受位移损伤剂量的影响。利用位移损伤剂量方法评价激光二极管的辐射损伤特征,并且预测其在空间辐射环境中的光功率衰退情况。模拟计算结果表明,MEO轨道辐射环境对激光二极管光功率辐射损伤远大于GEO轨道的影响,这主要是由于MEO轨道辐射环境的高能电子通量密度远大于GEO轨道的通量密度。

The 1.55 μm InGaAsP multi-quantum-well laser diodes with distributed feedback structures were irradiated by electrons and 60Co-γ rays. The experimental results show the slope e?ciency of laser diode is mostly affected by the total ionizing dose produced by charging particles, and the threshold current and the optical power mainly by displacement damage dose. The displacement damage dose methodology was employed to evaluate radiation damage of the laser diodes, and to predict the power degradations of these diodes in space. The calculated results indicate that the optical powers of the diodes will have more serious degradation for medium Earth orbit than for geosynchronous Earth orbit, due to higher fluence density of high energy electrons in GEO orbits.

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