分别在880℃/10min和880℃/60min规范下,采用Ag Cu Ti活性钎料实现了SiO2f/SiO2复合陶瓷与C/C复合材料的真空钎焊连接,通过电子探针(EPMA)、能谱仪(XEDS)和X射线衍射仪(XRD)分析了接头微观组织,室温下测试了接头的抗剪强度.结果表明:两种规范下所得接头界面结合良好,接头中靠近两侧母材均形成了一层扩散反应层,钎缝基体主要由均匀的共晶组织组成.880℃/10min规范下钎焊接头界面产物依次为:SiO2f/SiO2 →Ti4 O7 →Ti5 Si4+ Cu(s,s)+Ag Cu共晶合金→TiC→C/C;对于880℃/60min规范下的接头,界面组织结构与保温10min的接头基本类似,但是不存在Cu(s,s),并且接头反应层明显增厚.880℃/60min条件下所得钎焊接头剪切强度平均值为16.6MPa.
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