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室温下利用磁控溅射制备了ZnO/Cu/ZnO透明导电薄膜,采用X射线衍射(XRD)、原子力显微镜(AFM)、扫描电子显微镜(SEM)、霍尔效应测量仪和紫外-可见分光光度计研究了薄膜的结构、形貌、电学及光学等性能与退火温度之间的关系.结果表明:退火前后薄膜均具有ZnO(002)择优取向,随着退火温度的升高,薄膜的晶化程度、晶粒粒径及粗糙度增加,薄膜电阻率先降低后升高,光学透过率和禁带宽度先升高后降低.150℃下真空退火的ZnO/Cu/ZnO薄膜的性能最佳,最高可见光透光率为90.5%,电阻率为1.28×10-4Ω·cm,载流子浓度为4.10×1021 cm-3.

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