采用固态硫化法硫化铜锡锌(CZT)预制膜制备铜锌锡硫(Cu2 ZnSnS4,CZTS)薄膜,研究硫化时间对CZTS薄膜性能的影响.利用X射线衍射仪(XRD)和紫外拉曼光谱仪(Raman)分析薄膜的物相结构,通过X射线能谱仪(EDS)分析薄膜的化学组分,采用扫描电镜(SEM)观察薄膜的表面形貌,利用UV-Vis研究薄膜的光学特性.结果表明:随着硫化时间延长,Cu含量增加,Zn含量明显减少.硫化40min以上制备的薄膜出现导致禁带宽度减小的杂相SnS,Sn2S3和Cu2 SnS3.当硫化时间为20min时,样品为单相的CZTS薄膜,薄膜表面均匀平整,化学组分贫Cu富Sn,吸收系数达104 cm-1,禁带宽度Eg约为1.56eV.
参考文献
| [1] | 范勇;秦宏磊;密保秀;高志强;黄维.太阳能电池材料-铜锌锡硫化合物薄膜制备及器件应用研究进展[J].化学学报,2014(6):643-652. |
| [2] | Teodor K. Todorov;Jiang Tang;Santanu Bag;Oki Gunawan;Tayfun Gokmen;Yu Zhu;David B. Mitzi.Beyond 11% Efficiency: Characteristics of State-of-the-Art Cu_2ZnSn(S,Se)_4 Solar Cells[J].Advanced energy materials,20131(1):34-38. |
| [3] | Wang, Wei;Winkler, Mark T.;Gunawan, Oki;Gokmen, Tayfun;Todorov, Teodor K.;Zhu, Yu;Mitzi, David B..Device Characteristics of CZTSSe Thin-Film Solar Cells with 12.6% Efficiency[J].Advanced energy materials,20147(7):1. |
| [4] | Byungha Shin;Oki Gunawan;Yu Zhu.Thin film solar cell with 8.4% power conversion efficiency using an earth-abundant Cu_2ZnSnS_4 absorber[J].Progress in photovoltaics,20131(1):72-76. |
| [5] | Lian Guo;Yu Zhu;Oki Gunawan.Electrodeposited Cu_2ZnSnSe_4 thin film solar cell with 7% power conversion efficiency[J].Progress in photovoltaics,20141(1):58-68. |
| [6] | 贺显聪;郝菀;皮锦红;张传香;沈鸿烈.合成Cu2ZnSnS4薄膜四元共电沉积机理与退火相转变[J].材料工程,2015(4):66-72. |
| [7] | Mali, S.S.;Shinde, P.S.;Betty, C.A.;Bhosale, P.N.;Oh, Y.W.;Patil, P.S..Synthesis and characterization of Cu _2ZnSnS _4 thin films by SILAR method[J].The journal of physics and chemistry of solids,20126(6):735-740. |
| [8] | Hideaki Araki;Aya Mikaduki;Yuki Kubo;Tatsuhiro Sato;Kazuo Jimbo;Win Shwe Maw;Hironori Katagiri;Makoto Yamazaki;Koichiro Oishi;Akiko Takeuchi.Preparation of Cu_2ZnSnS_4 thin films by sulfurization of stacked metallic layers[J].Thin Solid Films,20084(4):1457-1460. |
| [9] | FENG JIANG;HONGLIE SHEN;WEI WANG.Optical and Electrical Properties of Cu_(2)ZnSnS_(4) Film Prepared by Sulfurization Method[J].Journal of Electronic Materials,20128(8):2204-2209. |
| [10] | 曹中明;杨元政;许佳雄;谢致薇.金属成分对固态硫化CZTS薄膜性能的影响[J].微纳电子技术,2015(6):366-370,389. |
| [11] | M. Dimitrievska;A. Fairbrother;X. Fontane;T. Jawhari;V. Izquierdo-Roca;E. Saucedo;A. Perez-Rodriguez.Multiwavelength excitation Raman scattering study of polycrystalline kesterite Cu_2ZnSnS_4 thin films[J].Applied physics letters,20142(2):021901-1-021901-5. |
| [12] | Vigil-Galán, O.;Espíndola-Rodríguez, M.;Courel, M.;Fontané, X.;Sylla, D.;Izquierdo-Roca, V.;Fairbrother, A.;Saucedo, E.;Pérez-Rodríguez, A..Secondary phases dependence on composition ratio in sprayed Cu _2ZnSnS_4 thin films and its impact on the high power conversion efficiency[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2013:246-250. |
| [13] | P.A. Fernandes;P.M.P. Salome;A.F. da Cunha.Study of polycrystalline Cu_2ZnSnS_4 films by Raman scattering[J].Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics,201128(28):7600-7606. |
| [14] | Tanaka, T;Nagatomo, T;Kawasaki, D;Nishio, M;Guo, QX;Wakahara, A;Yoshida, A;Ogawa, H.Preparation of Cu2ZnSnS4 thin films by hybrid sputtering[J].The journal of physics and chemistry of solids,200511(11):1978-1981. |
| [15] | F. Hergert;R. Hock.Predicted formation reactions for the solid-state syntheses of the semiconductor materials Cu2SnX3 and Cu2ZnSnX4 (X = S, Se) starting from binary chalcogenides[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,200715(15):5953-5956. |
| [16] | Jonathan J. Scragg;Tove Ericson;Tomas Kubart.Chemical Insights into the Instability of Cu2ZnSnS4 Films during Annealing[J].Chemistry of Materials: A Publication of the American Chemistry Society,201120(20):4625-4633. |
| [17] | S. M. Pawar;B. S. Pawar;A. V. Moholkar;D. S. Choi;J. H. Yun;J. H. Moon;S. S. Kolekar;J. H. Kim.Single step electrosynthesis of Cu_2ZnSnS_4 (CZTS) thin films for solar cell application[J].Electrochimica Acta,201012(12):4057-4061. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%