对SrTiO3材料体系的电致电阻效应及其机理进行了系统的介绍;并对目前公认的3种调制机理:氧空位电迁移模型、共振隧穿路径开闭模型、位错网络模型进行了详细讨论;指出几种机理可能共存于电致电阻调制过程的不同阶段,找到其中的主导机制将是未来研究的关键.
参考文献
[1] | Brewer J E,Zhimov V V,Hutchby J A,et al .Emerging research logic devices[J].IEEE Circuits Devices Mag,2005,5 |
[2] | Ramesh R,Aggarwal S,Auciello O .Science and technology of ferroelectric films and heterostructures for non-volatile ferroelectric memories[J].Mater Sci Eng R:Reports,2001,32 |
[3] | Parkin S S P,Roche K P,Samant M G,et al .Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory[J].J Appl Phys,1999,85(8):5828,1999. |
[4] | Raoux S,Burr G W,Breitwisch M J,et al .Phase-change random access memory:A scalable technology[J].IBM J Res Dev,2008,52:465,2008. |
[5] | Hickmott T W .Low-frequency negative resistance in thin anodic oxide films[J].J Appl Phys,1962,33(9):2669,1962. |
[6] | Liu S Q,Wu N J,Ignatiev A .Electric-pulse-induced reversible resistance change effect in magnetoresistive films[J].Appl Phys Lett,2000,76 |
[7] | Waser R,Aono M .Nanoionics-based resistive switching memory[J].Nature,2007,6 |
[8] | Sowa A .Resistive switching in transition metal oxides[J].Mater Today,2008,11(6):28,2008. |
[9] | 季振国,陈伟峰,毛启楠.电阻开关式非挥发性随机存储器的机理及其材料[J].功能材料与器件学报,2011(02):195-204. |
[10] | Simmons J G,Verderber R R .New conduction and reversible memory phenomena in thin insulating films[J].Proceed Royal Soc A,1967,301 |
[11] | Yun J B,Kim S J,Seo S .Random and localized resistive switching observation in Pt/NiO/Pt[J].Phys Stat Sol,2007,1(6):280,2007. |
[12] | Kwon D H,Kim K M,Jang J H,et al .Atomic structure of conducting nano-filaments in TiO2 resistive switching memory[J].Nat Nanotechn,2010,5(2):148,2010. |
[13] | Liao Z M,Hou C,Zhang H Z,et al .Evolution of resistive switching over bias duration of single Ag2 S nanowires[J].Appl Phys Lett,2010,96 |
[14] | Baikalov A,Wang Y Q,Shen B,et al .Field-driven hysteretic and reversible resistive switch at the Ag-Pr0.7 Ca0.3-MnO3 interface[J].App Phys Lett,2003,83(5):957,2003. |
[15] | Tsui S,Baikalov A,Cmaidalka J,et al .Field-induced resistive switching in metal-oxide interfaces[J].Appl Phys Lett,2004,85(2):317,2004. |
[16] | Guan W H,Long S B,Jia R,et al .Nonvolatile resistive switching memory utilizing gold nanocrystals embedded in zirconium oxide[J].Appl Phys Lett,2007,91 |
[17] | Fujii T,Kawasaki M,Sawa A,et al .Hysteretic currentvoltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3/SrTi0.99 Nb0.01 O3[J].Appl Phys Lett,2005,86 |
[18] | Choi D H,Lee D S,Sim H,et al .Reversible resistive switching of SrTiOx thin films for nonvolatile memory applications[J].Appl Phys Lett,2006,88 |
[19] | Oyamada T,Tanaka H,Matsushige K,et al .Switching effect in Cu:TCNQ charge transfer-complex thin films by vacuum codeposition[J].Appl Phys Lett,2003,83(6):1252,2003. |
[20] | Zou X,Ong H G,You L,et al .Charge trapping-detrapping induced resistive switching in Ba0.7 Sr0.3 TiO3[J].AIP Advances,2012,2 |
[21] | Liu X H,Ji Z Y,Tu D Y,et al .Organic nonpolar nonvolatile resistive switching in poly (3,4-ethylene-dioxythiophene):Polystyrenesulfonate thin film[J].Org Electron,2009,10:Polystyrenesulfonate thin film[J].Org Electron,2009,10:1191,2009. |
[22] | Guan W H,Long S B,Liu Q,et al .Nonpolar nonvolatile resistive switching in Cu Doped ZrO2[J].IEEE Electron Device Lett,2008,29(5):434,2008. |
[23] | Hirose S,Nishimura H,Niimi H .Resistance switching effect in Nb-doped SrTiO3 (100) bicrystal with(100) 45°twist boundary[J].J Appl Phys,2009,106 |
[24] | Jeon S H,Park B H,Lee J,et al .First-principles modeling of resistance switching in perovskite oxide material[J].Appl Phys Lett,2006,89 |
[25] | Fujii T,Kawasaki M,Sawa A,et al .Electrical properties and colossal electroresistance of heteroepitaxial SrRuO3/SrTi1-xNbxO3 (0.0002≤x≤0.02) Schottky junctions[J].Phys Rev B,2007,75 |
[26] | Kajewski D,Wrzalik R,Wojtyniak M,et al .Local conductivity of epitaxial Fe-doped SrTiO3 thin films[J].Phase Transit,2011,84:483,2011. |
[27] | Szot K,Speier W,Bihlmayer G,et al .Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3[J].Nat Mater,2006,5 |
[28] | Ricci D,Bano G,Pacchioni G .Electronic structure of a neutral oxygen vacancy in SrTiO3[J].Phys Rev B,2003,68 |
[29] | Pacchioni G .Oxygen vacancy:The invisible agent on oxide surfaces[J].Chem Phys Chem,2003,4 |
[30] | Alexandrow V E,Kotomin E A,Maier J,et al .First-principles study of bulk and surface oxygen vacancies in SrTiO3 crystal[J].Enr Phys J B,2009,10 |
[31] | Chen X G,Ma X B,Yang Y B,et al .Comprehensive study of the resistance switching in SrTiO3 and Nb-doped SrTiO3[J].Appl Phys Lett,2011,98 |
[32] | Tian H F,Zhao Y G,Shi J P,et al .Resistance switching effect in LaA1O3/Nb-doped SrTiO3 heterostructure[J].Appl Phys A,2011,102 |
[33] | Zhang P J,Meng Y,Liu Z Y,et al .Impact of interfacial resistance switching on thermoelectric effect of Nb-doped SrTiO3 single crystalline[J].J Appl Phys,2012,111 |
[34] | Xiang W F,Dong R,Lee D,et al .Heteroepitaxial growth of Nb-doped SrTiO3 films on Si substrates by pulsed laser deposition for resistance memory applications[J].Appl Phys Lett,2007,90 |
[35] | Szot K,Speier W,Carius R,et al .Localized metallic conductivity and self-healing during thermal reduction of SrTiO3[J].Phys Rev Lett,2002,88 |
[36] | Muenstermann R,Dittmann R,Szot K,et al .Realization of regular arrays of nanoscale resistive switching blocks in thin films of Nb-doped SrTiO3[J].Appl Phys Lett,2008,93 |
[37] | Muenstermann R,Menke T,Dittmann R,et al .Correlation between growth kinetics and nanoscale resistive switching properties of SrTiO3 thin films[J].J Appl Phys,2010,108 |
[38] | Menke T,Meuffels P,Dittmann R,et al .Separation of bulk and interface contributions to electroforming and resistive switching behavior of epitaxial Fe-doped SrTiO3[J].J Appl Phys,2009,105 |
[39] | Guo X .Roles of Schottky barrier and oxygen vacancies in the electroforming of SrTiO3[J].Appl Phys Lett,2012,101 |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%