采用磁控溅射法在SiO2/Si基底上沉积Cu/Ta/Ta-N及Cu/Ti/Ta-N薄膜,在高纯的Ar/H2气氛保护下对样品进行快速热退火处理,用XRD、SEM、EDS及四探针电阻测试仪(FPP)等分析测试方法对Ta/Ta-N和Ti/Ta-N双层薄膜的热稳定性及互扩散阻挡性能进行了比较分析.结果表明,当退火温度低于700℃时,Cu/Ta/Ta-N/SiO2/Si和Cu/Ti/Ta-N/SiO2/Si多层膜结构表面平整,方阻值均比较小(Cu/Ta/Ta-N/SiO2/Si约为0.175 Ω/口,Cu/Ti/Ta-N/SiO2/Si约为0.154 Ω/口);当退火温度到达700℃时,Cu/Ta/Ta-N/SiO2/Si试样开始出现Ta2O5和Cu3Si,由于Cu向基底扩散打破Si-Si和Si-O键,Si、O经扩散通道分别与Cu、Ta反应生成了Cu3Si和Ta2O5,表明Ta/Ta-N阻挡层开始失效;而Cu/Ti/Ta-N/SiO2/Si试样的Cu/Ti相界面形成了很薄的扩散溶解层——Cu4Ti、Cu4Ti3与Cu3Ti2,有力地阻断Cu向基底扩散的通道,从而提高了Ti/Ta-N双层膜的阻挡性能,使Ti/Ta-N双层膜对Cu的有效阻挡温度高达700℃.因此,Ti/Ta-N双层膜是一种良好的扩散阻挡层.
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