利用等离子体增强化学气相淀积(PECVD)方法在室温下制备出非晶氮氧化硅(a-SiNx Oy)薄膜.通过调节薄膜中的Si/N比例,可使其光致发光峰位在450～600nm的较宽波长范围内连续可调.对比a-SiNx薄膜和a-SiNxOy薄膜的发光特性,发现此薄膜发光来源于由氧引入的新发光缺陷态.由光吸收谱的测量结果可以推断出此发光缺陷态在光吸收边之下约0.65 eV处的禁带中.并且,通过傅里叶变换红外光谱(FTIR)和X射线光电子能谱(XPS)测量,证实了这种新发光缺陷态与薄膜中存在的O-Si-N键合结构有关.
参考文献
| [1] | Lockwood D J .Light emission in silicon nanostructures[J].J Mater Sci:Mater Electron,2009,20(01):S235. |
| [2] | Pavesi L;Negro L D;Mazzoleni C et al.Optical gain in silicon nanocrystals[J].NATURE,2000,408(6811):440. |
| [3] | L. Dal Negro;J. H. Yi;L. C. Kimerling;S. Hamel;A. Williamson;G. Galli .Light emission from silicon-rich nitride nanostructures[J].Applied physics letters,2006(18):183103-1-183103-3-0. |
| [4] | Hao HL;Shen WZ .Identification and control of the origin of photoluminescence from silicon quantum dots[J].Nanotechnology,2008(45):455704-1-455704-5-0. |
| [5] | Rosa Ruggeri;Fortunato Neri;Antonella Sciuto;Vittorio Privitera;Corrado Spinella;Giovanni Mannino .Luminescence properties of SiO_(x)N_(y) irradiated by IR laser 808 nm: The role of Si quantum dots and Si chemical environment[J].Applied physics letters,2012(4):042104-1-042104-3. |
| [6] | P. D. Nguyen;D. M. Kepaptsoglou;Q. M. Ramasse;M. F. Sunding;L. O. Vestland;T. G. Finstad;A. Olsen .Impact of oxygen bonding on the atomic structure and photoluminescence properties of Si-rich silicon nitride thin films[J].Journal of Applied Physics,2012(7):073514-1-073514-10. |
| [7] | Jou, S.;Liaw, I.-C.;Cheng, Y.-C.;Li, C.-H..Light emission of silicon oxynitride films prepared by reactive sputtering of silicon[J].Journal of Luminescence: An Interdisciplinary Journal of Research on Excited State Processes in Condensed Matter,2013:853-857. |
| [8] | Huang R;Lin Z;Guo Y et al.Bright red,orange-yellow and white switching photoluminescence from silicon oxynitride films with fast decay dynamics[J].Opt Mater Express,2014,4(02):205. |
| [9] | Zhongyuan Ma;Minyi Yan;Xiaofan Jiang;Huafeng Yang;Guoyin Xia;Xiaodong Ni;Tao Ling;Wei Li;Ling Xu;Kunji Chen;Xinfan Huang;Duan Feng .Strong blue light emission from a-SiN_(x):O films via localized surface plasmon enhancement[J].Applied physics letters,2012(1):013106-1-013106-4. |
| [10] | C. K. Wong;H. Wong;J. Liu .Properties of Silicon Oxynitride Films Annealed under Enhanced Hydrostatic Pressure[J].Journal of the Electrochemical Society,2011(3):H322-H327. |
| [11] | Hiromitsu Kato;Norihide Kashio;Yoshimichi Ohki;Kwang Soo Seol;Takashi Noma .Band-tail photoluminescence in hydrogenated amorphous silicon oxynitride and silicon nitride films[J].Journal of Applied Physics,2003(1):239-244. |
| [12] | Rui Huang;Kunji Chen;Bo Qian;San Chen;Wei Li;Jun Xu;Zhongyuan Ma;Xinfan Huang .Oxygen induced strong green light emission from low-temperature grown amorphous silicon nitride films[J].Applied physics letters,2006(22):221120-1-221120-3-0. |
| [13] | Huang R;Chen KJ;Han PG;Dong HP;Wang X;Chen DY;Li W;Xu J;Ma ZY;Huang XF .Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices[J].Applied physics letters,2007(9):93515-1-93515-3-0. |
| [14] | X. Tan;J. Wojcik;P. Mascher .Study of the optical properties of SiO_(x)N_(y) thin films by effective medium theories[J].Journal of Vacuum Science & Technology, A. Vacuum, Surfaces, and Films,2004(4):1115-1119. |
| [15] | J. R. Shallenberger;D. A. Cole;S. W. Novak .Characterization of silicon oxynitride thin films by x-ray photoelectron spectroscopy[J].Journal of Vacuum Science & Technology, A. Vacuum, Surfaces, and Films,1999(4):1086-1090. |
| [16] | Naskar S;Wolter SD;Bower CA;Stoner BR;Glass JT .Verification of the O-Si-N complex in plasma-enhanced chemical vapor deposition silicon oxynitride films[J].Applied physics letters,2005(26):61907-1-61907-3-0. |
| [17] | Krcher R;Ley L;Johnson R L .Electronic structure of hydrogenated and unhydrogenated amorphous SiNx (0 ≤ x ≤ 1.6):A photoemission study[J].Physical Review B:Condensed Matter,1984,30(04):1896. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%