石墨烯自从2004年问世之后,由于独特的结构和优异的性能很快便成为了碳素家族的明星而引起了各界的关注.石墨烯独特的电学性能使其有望替代硅成为下一代半导体工业的主角.然而要实现石墨烯电子器件的构建,必须先解决在绝缘或半导体衬底上直接制备石墨烯的难题.综述了近几年不同绝缘衬底对化学气相沉积法制备石墨烯所产生的影响,分析比较了不同绝缘衬底的优缺点,并展望了石墨烯的发展及应用前景.
参考文献
[1] | Novoselov K S;Geim A K;Morozov S V et al.Electric field effect in atomically thin carbon films[J].SCIENCE,2004,306(5696):666. |
[2] | Changgu Lee;Xiaoding Wei;Jeffrey W. Kysar;James Hone .Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene[J].Science,2008(5887):385-388. |
[3] | Chen JH;Jang C;Xiao SD;Ishigami M;Fuhrer MS .Intrinsic and extrinsic performance limits of graphene devices on SiO2[J].Nature nanotechnology,2008(4):206-209. |
[4] | Meyer J .Carbon sheets an atom thick give rise to graphene dreams[J].SCIENCE,2009,324(5929):875. |
[5] | Balandin AA;Ghosh S;Bao WZ;Calizo I;Teweldebrhan D;Miao F;Lau CN .Superior thermal conductivity of single-layer graphene[J].Nano letters,2008(3):902-907. |
[6] | Novoselov KS;Jiang Z;Zhang Y;Morozov SV;Stormer HL;Zeitler U;Maan JC;Boebinger GS;Kim P;Geim AK .Room-temperature quantum Hall effect in graphene.[J].Science,2007(5817):1379-0. |
[7] | Wang Y;Huang Y;Song Y;Zhang XY;Ma YF;Liang JJ;Chen YS .Room-Temperature Ferromagnetism of Graphene[J].Nano letters,2009(1):220-224. |
[8] | 李兴鳌,王博琳,刘忠儒.石墨烯的制备、表征与特性研究进展[J].材料导报,2012(01):61-65. |
[9] | K. S. Novoselov;D. Jiang;F. Schedin;T. J. Booth;V. V. Khotkevich;S. V. Morozov;A. K. Geim .Two-dimensional atomic crystals[J].Proceedings of the National Academy of Sciences of the United States of America,2005(30):10451-10453. |
[10] | Chan H A;Moody M V;Paik H J .Superconducting gravity gradiometer for sensitive gravity measurements.Ⅱ.Experiment[J].Physical Review D:Particles and Fields,1987,35(12):3572. |
[11] | 陈瑞灿,王海燕,韩永刚,王新星,王星雨,刘伟,叶方德,姚宁.氧化还原法制备石墨烯及其表征[J].材料导报,2012(12):114-117. |
[12] | Sutter PW;Flege JI;Sutter EA .Epitaxial graphene on ruthenium[J].Nature materials,2008(5):406-411. |
[13] | Hannon, JB;Tromp, RM .Pit formation during graphene synthesis on SiC(0001): In situ electron microscopy[J].Physical review. B, Condensed Matter And Materials Physics,2008(24):241404-1-241404-4-0. |
[14] | Graphene on metal surfaces[J].Surface Science: A Journal Devoted to the Physics and Chemistry of Interfaces,2009(10/12):1841-1852. |
[15] | Bae, S.;Kim, H.;Lee, Y.;Xu, X.;Park, J.-S.;Zheng, Y.;Balakrishnan, J.;Lei, T.;Ri Kim, H.;Song, Y.I.;Kim, Y.-J.;Kim, K.S.;?zyilmaz, B.;Ahn, J.-H.;Hong, B.H.;Iijima, S. .Roll-to-roll production of 30-inch graphene films for transparent electrodes[J].Nature nanotechnology,2010(8):574-578. |
[16] | Li, X.;Magnuson, C.W.;Venugopal, A.;An, J.;Suk, J.W.;Han, B.;Borysiak, M.;Cai, W.;Velamakanni, A.;Zhu, Y.;Fu, L.;Vogel, E.M.;Voelkl, E.;Colombo, L.;Ruoff, R.S. .Graphene films with large domain size by a two-step chemical vapor deposition process[J].Nano letters,2010(11):4328-4334. |
[17] | Li, X.;Magnuson, C.W.;Venugopal, A.;Tromp, R.M.;Hannon, J.B.;Vogel, E.M.;Colombo, L.;Ruoff, R.S. .Large-area graphene single crystals grown by low-pressure chemical vapor deposition of methane on copper[J].Journal of the American Chemical Society,2011(9):2816-2819. |
[18] | Yan, K.;Peng, H.;Zhou, Y.;Li, H.;Liu, Z. .Formation of bilayer bernal graphene: Layer-by-layer epitaxy via chemical vapor deposition[J].Nano letters,2011(3):1106-1110. |
[19] | Lee, S.;Lee, K.;Zhong, Z. .Wafer scale homogeneous bilayer graphene films by chemical vapor deposition[J].Nano letters,2010(11):4702-4707. |
[20] | Li X;Cai W;An J et al.Large-area synthesis of high-quality and uniform graphene films on copper foils[J].SCIENCE,2009,324(5932):1312. |
[21] | 任文才,高力波,马来鹏,成会明.石墨烯的化学气相沉积法制备[J].新型炭材料,2011(01):71-80. |
[22] | Li, XS;Zhu, YW;Cai, WW;Borysiak, M;Han, BY;Chen, D;Piner, RD;Colombo, L;Ruoff, RS .Transfer of Large-Area Graphene Films for High-Performance Transparent Conductive Electrodes[J].Nano letters,2009(12):4359-4363. |
[23] | Qingkai Yu;Jie Lian;Sujitra Siriponglert;Hao Li;Yong P. Chen;Shin-Shem Pei .Graphene segregated on Ni surfaces and transferred to insulators[J].Applied physics letters,2008(11):113103-1-113103-3-0. |
[24] | Peter Sutter;Jerzy T. Sadowski;Eli Sutter .Graphene on Pt(111): Growth and substrate interaction[J].Physical review, B. Condensed matter and materials physics,2009(24):245411:1-245411:10. |
[25] | Reina A;Jia XT;Ho J;Nezich D;Son HB;Bulovic V;Dresselhaus MS;Kong J .Large Area, Few-Layer Graphene Films on Arbitrary Substrates by Chemical Vapor Deposition[J].Nano letters,2009(1):30-35. |
[26] | Keun Soo Kim;Yue Zhao;Houk Jang;Sang Yoon Lee;Jong Min Kim;Kwang S. Kim;Jong-Hyun Ann;Philip Kim;Jae-Young Choi;Byung Hee Hong .Large-scale Pattern Growth Of Graphene Films For Stretchable Transparent Electrodes[J].Nature,2009(7230):706-710. |
[27] | Ismach, A.;Druzgalski, C.;Penwell, S.;Schwartzberg, A.;Zheng, M.;Javey, A.;Bokor, J.;Zhang, Y. .Direct chemical vapor deposition of graphene on dielectric surfaces[J].Nano letters,2010(5):1542-1548. |
[28] | Yan, Z.;Peng, Z.;Sun, Z.;Yao, J.;Zhu, Y.;Liu, Z.;Ajayan, P.M.;Tour, J.M. .Growth of Bilayer graphene on insulating substrates[J].ACS nano,2011(10):8187-8192. |
[29] | Peng, Z.;Yan, Z.;Sun, Z.;Tour, J.M. .Direct growth of Bilayer graphene on SiO_2 substrates by carbon diffusion through nickel[J].ACS nano,2011(10):8241-8247. |
[30] | Chen, J.;Wen, Y.;Guo, Y.;Wu, B.;Huang, L.;Xue, Y.;Geng, D.;Wang, D.;Yu, G.;Liu, Y. .Oxygen-aided synthesis of polycrystalline graphene on silicon dioxide substrates[J].Journal of the American Chemical Society,2011(44):17548-17551. |
[31] | Lin Cheng;Andrew J. Steckl;James D. Scofield .Effect of Trimethylsilane Flow Rate on the Growth of SiC Thin-Films for Fiber-Optic Temperature Sensors[J].Journal of Microelectromechanical Systems: A Joint IEEE and ASME Publication on Microstructures, Microactuators, Microsensors, and Microsystems,2003(6):797-803. |
[32] | Kongara M. Reddy;Andrew D. Gledhill;Chun-Hu Chen;Julie M. Drexler;Nitin P. Padture .High quality, transferrable graphene grown on single crystal Cu(111) thin films on basal-plane sapphire[J].Applied physics letters,2011(11):113117-1-113117-3. |
[33] | Miyasaka Y;Nakamura A;Temmyo J .Graphite thin films consisting of nanograins of multilayer graphene on sapphire substrates directly grown by alcohol chemical vapor deposition[J].Japanese Journal of Applied Physics,2011,50:04DH12. |
[34] | Fanton, M.A.;Robinson, J.A.;Puls, C.;Liu, Y.;Hollander, M.J.;Weiland, B.E.;Labella, M.;Trumbull, K.;Kasarda, R.;Howsare, C.;Stitt, J.;Snyder, D.W. .Characterization of graphene films and transistors grown on sapphire by metal-free chemical vapor deposition[J].ACS nano,2011(10):8062-8069. |
[35] | Dean, C.R.;Young, A.F.;Meric, I.;Lee, C.;Wang, L.;Sorgenfrei, S.;Watanabe, K.;Taniguchi, T.;Kim, P.;Shepard, K.L.;Hone, J. .Boron nitride substrates for high-quality graphene electronics[J].Nature nanotechnology,2010(10):722-726. |
[36] | Wang M;Jang S K;Jang W J et al.A ptform for largescale graphene electronics-CVD growth of single-layer graphene on CVD-grown hexagonal boron nitride[J].Advanced Materials,2013,25(19):2746. |
[37] | Wei Yang;Guorui Chen;Zhiwen Shi .Epitaxial growth of single-domain graphene on hexagonal boron nitride[J].Nature materials,2013(9):792-797. |
[38] | Yu, J.;Liu, G.;Sumant, A.V.;Goyal, V.;Balandin, A.A. .Graphene-on-diamond devices with increased current-carrying capacity: Carbon sp ~2-on-sp ~3 technology[J].Nano letters,2012(3):1603-1608. |
[39] | Wu Y;Lin Y;Bol A A et al.High-frequency,scaled graphene transistors on diamond-like carbon[J].NATURE,2011,472(7341):74. |
[40] | Ogawa S;Yamada T;Ishizduka S et al.Vacuum annealing formation of graphene on diamond C (111) surfaces studied by real-time photoelectron spectroscopy[J].Japanese Journal of Applied Physics,2012,51(11S):11PF02. |
[41] | A L Ivanovskii .Graphene-based and graphene-like materials[J].Russian Chemical Reviews: Reviews on Current Topics in Chemistry,2012(7):571-605. |
[42] | Deepak Varshney;Chitturi Venkateswara Rao;Maxime J.-F. Guinel;Yasuyuki Ishikawa;Brad R. Weiner;Gerardo Morell .Free standing graphene-diamond hybrid films and their electron emission properties[J].Journal of Applied Physics,2011(4):044324-1-044324-6. |
[43] | Takuma Shiga;Satoru Konabe;Junichiro Shiomi;Takahiro Yamamoto;Shigeo Maruyama;Susumu Okada .Graphene-diamond hybrid structure as spin-polarized conducting wire with thermally efficient heat sinks[J].Applied physics letters,2012(23):233101-1-233101-4. |
[44] | Jorge M. Garcia;Rui He;Mason P. Jiang .Multilayer graphene grown by precipitation upon cooling of nickel on diamond[J].Carbon: An International Journal Sponsored by the American Carbon Society,2011(3):1006-1012. |
[45] | Tokuda N;Fukui M;Makino T et al.Formation of graphene-on-diamond structure by graphitization of atomically flat diamond (111) surface[J].Japanese Journal of Applied Physics,2013,52(11R):110121. |
[46] | Yang H;Heo J;Park S et al.Graphene barristor,a triode device with a gate-controlled Schottky barrier[J].SCIENCE,2012,336(6085):1140. |
[47] | Li, XS;Cai, WW;Colombo, L;Ruoff, RS .Evolution of Graphene Growth on Ni and Cu by Carbon Isotope Labeling[J].Nano letters,2009(12):4268-4272. |
[48] | Zhang Y;Zhang L;Zhou C .Review of chemical vapor deposition of graphene and related applications[J].Accounts of Chemical Research,2013,46(10):2329. |
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