简要介绍了金刚石膜的物理化学特性及应用领域.对比分析了主要化学气相沉积方法的优缺点,并指出MPCVD所面临的技术瓶颈.总结了反应腔体内压强、基片温度、基体材料及增强形核技术对金刚石膜形核过程的影响.较低腔体内压力、基片温度,高碳源浓度及等离子体预处理能有效提高形核密度.阐述了各过程参数对金刚石膜生长的影响和微米、纳米、超纳米金刚石膜的技术特点及应用.指出各类金刚石膜制备所面临的技术难题,并综述了解决该技术瓶颈的最新研究工作.
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