硒镉汞（Hg1－xCdxSe）作为碲镉汞（Hg1－xCdxTe）的红外替代材料受到广泛关注，它具有位错密度低、热膨胀系数小、晶格失配小等优势，可望获得高质量、大面积、廉价长波红外（Long-wavelength infrared，LWIR）焦平面阵列（Focal plane arrays，FPAs）。综述了Hg1－xCdxSe材料的最新研究进展，讨论了Hg1－xCdxSe薄膜材料在不同衬底和不同生长条件下对薄膜质量的影响及最新研究结果；同时，对Hg1－xCdxSe材料的研究进行了展望。
As one alternative infrared (IR)material of mercury cadmium telluride (Hg1-x CdxTe),mercury cadmium selenide (Hg1-xCdxSe)has attracted extensive attention in the field of third generation IR materials.For some advantages of low dislocation density,low thermal expansion coefficient,low lattice mismatch and so on,Hg1-x-CdxSe material could be used to prepare high quality,large-area,and low-cost long-wavelength infrared (LWIR)focal plane arrays (FPAs).In this paper,the research progress of Hg1-xCdxSe IR materials is summarized,the influences of the different substrates and various growth conditions on the qualities of Hg1-xCdxSe films are discussed in details, and its future development is put in prospect as well.
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