GaInAsN能与GaAs、Ge等重要衬底晶格匹配，并同时满足三结或四结太阳能电池的带隙要求，因而备受瞩目。但目前制备高质量的GaInAsN材料仍十分困难，主要原因在于N在GaInAs中的固溶度特别低，难以实现均匀并入，由此产生的N缺陷很大程度上降低了该材料体系的光电性能。总结了近年来GaInAsN薄膜材料应用于太阳能电池的研究进展，介绍了GaInAsN材料体系的研究历程和基本物理特性，分析了GaInAsN材料体系存在的关键问题，讨论了目前优化GaInAsN薄膜质量和太阳能电池性能的方法。在此基础之上，对GaInAsN光伏材料的研究发展趋势做了展望。
GaInAsN has attracted much attention because the lattice matching can be achieved between GaIn-AsN and several importemt substrates (GaAs,Ge,etc)and the energy-gap requirement of three or four-junction solar cells can be fulfilled as well.Nevertheless the preparation of high-quality GaInAsN material is still a big challenge at present.It is mainly because the low solid solubility of N in GaInAs can leads to the inhomogeneous incorporation,and the resulting N defects can greatly reduce the photoelectric properties of GaInAsN.In this review,recent research progresses of GaInAsN material used in solar cells are summarized,and the basic physical properties of GaInAsN are introduced.Furthermore,the key issues in the GaInAsN material system are analyzed in detail,and the methods of optimizing the quality of GaInAsN material and the performance of related solar cells are discussed as well.Finally, the developing trends of GaInAsN photovoltaic material are prospected.
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