综述了近几年氮氧化硅复合材料、氮氧化硅薄膜材料和介孔氮氧化硅材料的研究与发展现状。着重介绍了氮氧化硅薄膜材料的发光特性和折射率可调特性，及其不同的制备方法。同时介绍了介孔氮氧化硅材料和Si3 N4／Si2 N2 O、SiC／Si2 N2 O及BN／SiNOf 三种应用较多的氮氧化硅复合材料的研究现状。并对氮氧化硅材料的研究与应用进行了展望。
Recent research and development of silicon oxynitride composites,silicon oxynitride film materials and mesoporous silicon oxynitride materials are reviewed in this paper.It focuses on the light-emitting properties and adjustable refractive index of silicon oxynitride film materials,as well as different preparation methods.This article al-so introduces the research status of mesoporous silicon oxynitride materials and three common silicon oxynitride com-posites (Si3 N4/Si2 N2 O,SiC/Si2 N2 O and BN/SiNOf ).Moreover,the research and application of silicon oxynitride materials are anticipated.
参考文献
| [1] | Lin, Shaojie;Ye, Feng;Dong, Shangli;Ma, Jie;Zhang, Biao;Ding, Junjie.Mechanical, dielectric properties and thermal shock resistance of porous silicon oxynitride ceramics by gas pressure sintering[J].Materials Science & Engineering, A. Structural Materials: Properties, Misrostructure and Processing,2015:1-5. |
| [2] | Li ShuQin;Pei YuChen;Yu ChangQing.Mechanical and dielectric properties of porous Si_2N_2O-Si_3N_4 in situ composites[J].CERAMICS INTERNATIONAL,20095(5):1851-1854. |
| [3] | S. S. Nekrashevich;V. A. Gritsenko.Electronic structure of silicon oxynitride: Ab-initio and experimental study, comparison with silicon nitride[J].Journal of Applied Physics,201111(11):114103-1-114103-6. |
| [4] | Jian Dong;Ping Du;Xin Zhang.Characterization of the Young's modulus and residual stresses for a sputtered silicon oxynitride film using micro-structures[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2013Oct.31(Oct.31):414-418. |
| [5] | B. Rangarajan;A. Y. Kovalgin;K. Worhoff;J. Schmitz.Low-temperature deposition of high-quality silicon oxynitride films for CMOS-integrated optics[J].Optics Letters,20136(6):941-943. |
| [6] | Satinder K. Sharma;Sumit Barthwal;Vikram Singh;Anuj Kumar;Prabhat K. Dwivedi;B. Prasad;Dinesh Kumar.PECVD based silicon oxynitride thin films for nano photonic on chip interconnects applications[J].Micron: The international research and review journal for microscopy,2013:339-346. |
| [7] | Yin, L.;Lu, M.;Wielunski, L.;Song, W.;Tan, J.;Lu, Y;Jiang, W.Fabrication and characterization of compact silicon oxynitride waveguides on silicon chips[J].Journal of optics, A. Pure and applied optics: journal of the European Optical Society,20128(8):085501-1-085501-6. |
| [8] | Rangarajan, B.;Kovalgin, A.Y.;Schmitz, J..Deposition and properties of silicon oxynitride films with low propagation losses by inductively coupled PECVD at 150°C[J].Surface & Coatings Technology,2013:46-50. |
| [9] | Aradhana Dutta;Bidyut Deka;Partha Pratim Sahu.Modeling and fabrication of evanescent waveguide-based optical sensor for sensitivity enhancement using silicon oxynitride technology[J].Optical Engineering,20137(7):077101-1-077101-6. |
| [10] | Sungwook Jung;Kyungsoo Jang;Youn-Jung Lee.High charge storage of poly-Si thin film nonvolatile memory devices with oxide-silicon-oxynitride stack structures[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,20103(3):167-170. |
| [11] | 骆俊廷;张凯锋;王国峰;陈国清.原位制备细晶Si3N4-Si2N2O复相陶瓷[J].粉末冶金技术,2005(3):172-175. |
| [12] | 裴雨辰;李嘉禄;于长清;李淑琴.原位无压烧结制备Si2 N2O-Si3 N4复相陶瓷[J].材料工程,2008(5):4-6,12. |
| [13] | 黄正宇;李淑琴;于长清;裴雨辰.原位生成Si2N2O与β-Si3N4晶种协同增韧Si3N4复相陶瓷研究[J].宇航材料工艺,2009(2):57-61. |
| [14] | 简秀梅;吴基球.高岭土除铁增白技术的发展动态[J].中国陶瓷,2004(1):48-50. |
| [15] | 刘春侠;赵俊国;张治平;王文武.氮化物结合碳化硅窑具材料抗氧化性能研究[J].陶瓷,2005(5):18-21. |
| [16] | Zou, C.;Zhang, C.;Xiao, Y.;Li, B.;Wang, S.;Cao, F..Fabrication of high performance silicon oxynitride fibers reinforced boron nitride composites via borazine precursor infiltration and heating[J].Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites,201223(23):3338-3341. |
| [17] | Zou, Chunrong;Zhang, Changrui;Li, Bin;Wang, Siqing;Xie, Zhengfang;Song, Yongcai.Ablation behavior of boron nitride based ceramic composites reinforced by continuous silicon oxynitride fiber[J].CERAMICS INTERNATIONAL,20153 Pt.B(3 Pt.B):4768-4774. |
| [18] | P. D. Nguyen;D. M. Kepaptsoglou;Q. M. Ramasse;M. F. Sunding;L. O. Vestland;T. G. Finstad;A. Olsen.Impact of oxygen bonding on the atomic structure and photoluminescence properties of Si-rich silicon nitride thin films[J].Journal of Applied Physics,20127(7):073514-1-073514-10. |
| [19] | Hiromitsu Kato;Norihide Kashio;Yoshimichi Ohki;Kwang Soo Seol;Takashi Noma.Band-tail photoluminescence in hydrogenated amorphous silicon oxynitride and silicon nitride films[J].Journal of Applied Physics,20031(1):239-244. |
| [20] | C. K. Wong;H. Wong;J. Liu.Properties of Silicon Oxynitride Films Annealed under Enhanced Hydrostatic Pressure[J].Journal of the Electrochemical Society,20113(3):H322-H327. |
| [21] | 周顺;刘卫国;蔡长龙;刘欢.氮氧化硅薄膜红外吸收特性的研究[J].兵工学报,2011(10):1255-1259. |
| [22] | WANG Xiang;HUANG Rui;SONG Chao;SONG Jie;GUO YanQing.Interface effects on the electroluminescence spectra in amorphous-Si/silicon oxynitride multilayer structures[J].中国科学:物理学 力学 天文学（英文版）,2012(7):1194-1197. |
| [23] | Lingbo Xu;Lu Jin;Dongsheng Li;Deren Yang.Effects of excess silicon on the 1540 nm Er~(3+) luminescence in silicon rich oxynitride films[J].Applied physics letters,20137(7):071101-1-071101-4. |
| [24] | 董恒平;陈坤基;李伟;孙正凤;黄敏;段欢;曹燕;王友凤.非晶氮氧化硅薄膜中新发光缺陷态的研究[J].材料导报,2014(22):24-27. |
| [25] | Jou, S.;Liaw, I.-C.;Cheng, Y.-C.;Li, C.-H..Light emission of silicon oxynitride films prepared by reactive sputtering of silicon[J].Journal of Luminescence: An Interdisciplinary Journal of Research on Excited State Processes in Condensed Matter,2013:853-857. |
| [26] | 朱勇;顾培夫;沈伟东;邹桐.射频磁控反应溅射氮氧化硅薄膜的研究[J].光学学报,2005(4):567-571. |
| [27] | 胡九龙;杭凌侠;周顺.PECVD技术制备低折射率光学薄膜[J].表面技术,2013(2):95-97. |
| [28] | 薛俊;杭凌侠;刘昊轩.PECVD制备光学薄膜材料折射率控制技术[J].光学技术,2014(04):353-356,361. |
| [29] | Hallam, B.;Tjahjono, B.;Wenham, S..Effect of PECVD silicon oxynitride film composition on the surface passivation of silicon wafers[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,20121(1):173-179. |
| [30] | Brinkmann, N.;Sommer, D.;Micard, G.;Hahn, G.;Terheiden, B..Electrical, optical and structural investigation of plasma-enhanced chemical-vapor-deposited amorphous silicon oxynitride films for solar cell applications[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2013:180-188. |
| [31] | 赵晓锋;温殿忠;王天琦;丁玉洁.薄膜厚度和退火温度对纳米多晶硅薄膜特性影响[J].功能材料,2010(10):1753-1756. |
| [32] | 李嘉;焦玉娟;周正扬;高肖汉;吕雪川;范志平.多晶硅薄膜材料制备技术研究进展[J].现代化工,2015(5):25-29. |
| [33] | McKerracher, I.R.;Fu, L.;Tan, H.H.;Jagadish, C..Thermal expansion coefficients and composition of sputter-deposited silicon oxynitride thin films[J].Journal of Physics, D. Applied Physics: A Europhysics Journal,201033(33):335104-1-335104-8. |
| [34] | Jamal El Haskouri;Saul Cabrera;Fernando Sapina;Julio Latorre;Carmen Guillem;Aurelio Beltran-Porter;Daniel Beltran-Porter;M. Dolores Marcos;Pedro Amoros.Ordered Mesoporous Silicon Oxynitrides[J].Advanced Materials,20013(3):192-195. |
| [35] | Mahendra P. Kapoor;Shinji Inagaki.Synthesis of Mesoporous Silicon Oxynitrides via Direct Nitridation with Nitrogen[J].Chemistry Letters,20031(1):94-95. |
| [36] | 张存满;徐政;万克树;刘茜.高氮含量的有序氮氧化物介孔材料的研究[J].无机材料学报,2004(3):559-565. |
| [37] | 张存满;刘茜;徐政.具有碱催化活性的有序氮氧化硅MCM-41介孔分子筛的制备与性能研究[J].化学学报,2006(4):313-319. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%