利用频域有限差分法计算获得的金属背反镜吸收损耗谱及其光电流密度谱,分析了c-Si、a-Si和GaAs三种材料电池的银背反镜的吸收损耗情况.分析过程中,电池结构采用两种形式,即平板型和织构型,且两种形式的电池结构具有相同的有源层厚度、减反膜结构、缓冲层结构、银背反镜厚度.分析表明:直接带隙a-Si和GaAs材料的银背反镜损耗小于间接带隙c-Si材料;平板型电池银背反镜的TE模损耗随入射角增加而减小,TM模损耗随入射角增加而增加;织构型电池银背反镜吸收谱的吸收峰较平板型电池多,相应的银背反镜的损耗也较平板型电池大;TM模激励的等离子体振荡吸收效应在织构型电池中表现明显.
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