图形化衬底对高In组分InGaN材料分子束外延(MBE)生长的影响

材料导报, 2016, 30(16): 31-54. doi: 10.11896/j.issn.1005-023X.2016.16.007

图形化衬底对高In组分InGaN材料分子束外延(MBE)生长的影响

李宝吉 ^1, , 吴渊渊 ^2, , 陆书龙 ^3, , 张继军 ^4,

1.上海大学材料科学与工程学院,上海200444;中国科学院苏州纳米技术与纳米仿生研究所,纳米器件及先进材料研究部,苏州215123

2.中国科学院苏州纳米技术与纳米仿生研究所,纳米器件及先进材料研究部,苏州215123

3.中国科学院苏州纳米技术与纳米仿生研究所,纳米器件及先进材料研究部,苏州215123

4.上海大学材料科学与工程学院,上海,200444

基金项目: 国家自然科学基金(61574161,61574130) 江苏自然科学基金(BK20151455)

关键词： InGaN , 图形化衬底 , 分子束外延 , 晶体质量

Effects of Patterned Substrate on Quality of High Indium Content InGaN Grown by Molecular Beam Epitaxy (MBE)

Keywords： InGaN , patterned substrate , molecular beam epitaxy (MBE) , crystal quality

研究了不同衬底上MBE技术生长的InGaN的光学和结构特征.结果表明,在相同生长条件下,用图形化衬底生长的InGaN材料比用普通衬底生长的材料有较低的表面粗糙度和背景载流子浓度及较强的发光强度.通过透射电子显微镜(TEM)观察,发现普通衬底生长的InGaN内部原子错排现象严重,而采用图形化衬底生长的InGaN原子排列清晰规则.这主要是因为图形化衬底材料外延初期为横向生长模式,这种生长模式可有效地抑制穿透位错在GaN材料体系中的纵向延伸,降低GaN缓冲层中的位错密度,进而抑制外延InGaN材料中穿透位错和V型缺陷的产生.

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