基于光伏行业对低成本晶体硅材料的巨大需求，晶体硅低温生长技术逐渐受到人们的青睐。该技术是在低温下将硅与低熔点金属进行共熔化处理，结合液相外延、合金定向凝固等技术生长、制备晶体硅。首先阐述了晶体硅低温制备原理，并对其生长行为、受控因素和应用现状进行综述，指出了目前各自存在的问题与难点，最后对下一阶段晶体硅生长技术的研究重点和发展前景进行了展望。
With the increasing demand of low-cost crystalline silicon material for photovoltaic industry,people gradually pay close attention to silicon growth technology at low-temperature.This technique is that crystalline silicon can be produced in the low temperature process,in which silicon is firstly alloyed with low-melting-point metals and then recrystallized,i.e.liquid phase epitaxy and directional solidification refining techniques.In this review,based on the basic principle of silicon growth techniques,the current situations of research and applications of liquid phase epitaxy and directional solidification are reviewed in this work.In addition,the current problems and the research direction of silicon growth technology are presented.
参考文献
| [1] | 黄庆举;林继平;魏长河;姚若河.硅太阳能电池的应用研究与进展[J].材料开发与应用,2009(6):93-96. |
| [2] | Nishida S.;Iwane M.;Iwasaki Y.;Ukiyo N.;Mizutani M. Shoji T.;Nakagawa K..Si-film growth using liquid phase epitaxy method and its application to thin-film crystalline Si solar cell[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,20011/4(1/4):525-532. |
| [3] | Martin E. Sivestre;Matthias Franzreb;Peter G. Weidler;Osama Shekhah;Christof Woell.Magnetic Cores with Porous Coatings: Growth of Metal-Organic Frameworks on Particles Using Liquid Phase Epitaxy[J].Advanced functional materials,20139(9):1210-1213. |
| [4] | Masahiro Matsue;Yuhsuke Yasutake;Susumu Fukatsu;Takuji Hosoi;Takayoshi Shimura;Heiji Watanabe.Strain-induced direct band gap shrinkage in local Ge-on-insulator structures fabricated by lateral liquid-phase epitaxy[J].Applied physics letters,20143(3):031106-1-031106-4. |
| [5] | 龙桂花;吴彬;韩松;丘克强.太阳能级多晶硅生产技术发展现状及展望[J].中国有色金属学报,2008(z1):386-392. |
| [6] | 介万奇.凝固原理的前沿进展及其应用[J].中国材料进展,2014(6):321-326. |
| [7] | TAKESHI YOSHIKAWA;KENTARO ARIMURA;KAZUKI MORITA.Boron Removal by Titanium Addition in Solidification Refining of Silicon with Si-Al Melt[J].Metallurgical and Materials Transactions, B. Process metallurgy and materials processing science,20056(6):837-842. |
| [8] | Kyoichi Kinoshita;Osamu Nakatsuka;Shinichi Yoda;Shigeaki Zaima.Homogeneous Si_(0.5)Ge_(0.5) bulk crystal growth as substrates for strained Ge thin films by the traveling liquidus-zone method[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,20128(8):3279-3282. |
| [9] | Y.T. Wong;C. Hsu;C.W. Lan.Development of grain structures of multi-crystalline silicon from randomly orientated seeds in directional solidification[J].Journal of Crystal Growth,2014Feb.1(Feb.1):10-15. |
| [10] | Tan, Y.;Ren, S.;Shi, S.;Wen, S.;Jiang, D.;Dong, W.;Ji, M.;Sun, S..Removal of aluminum and calcium in multicrystalline silicon by vacuum induction melting and directional solidification[J].Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology,2014:272-276. |
| [11] | 刘立新;罗平;李春;林海;张学建;张莹.单晶硅生长原理及工艺[J].长春理工大学学报（自然科学版）,2009(4):569-573. |
| [12] | 魏奎先;郑达敏;马文会;杨斌;戴永年.定向凝固技术在冶金法多晶硅制备过程中的应用[J].真空科学与技术学报,2014(12):1358-1365. |
| [13] | 刘智;李传波;薛春来;成步文.Si基Ge异质结构发光器件的研究进展[J].中国光学,2013(4):449-456. |
| [14] | Berger S.;Fave A.;Ouldabbes A.;Kaminski A.;Perichon S. Chabane-Sari NE.;Barbier D.;Laugier A.;Quoizola S..Liquid phase epitaxial growth of silicon on porous silicon for photovoltaic applications[J].Crystal Research and Technology: Journal of Experimental and Industrial Crystallography,20018/10(8/10):1005-1010. |
| [15] | 钱永彪;史伟民;陈培峰.Si薄膜低温液相外延[J].半导体光电,1998(02):128. |
| [16] | Refining of silicon during its solidification from a Si-Al melt[J].Journal of Crystal Growth,20093(3):776. |
| [17] | 李亚琼;李佳艳;谭毅;武深瑞;刘瑶.铝硅合金精炼提纯多晶硅的研究进展[J].材料导报,2012(9):6-10,20. |
| [18] | Yuki Nishi;Youngjo Fang;Kazuki Morita.Control of Si Crystal Growth during Solidification of Si-Al Melt[J].Materials transactions,20107(7):1227-1230. |
| [19] | Aleksandar M. Mitrasinovic;Torstein A. Utigard.Refining Silicon for Solar Cell Application by Copper Alloying[J].Silicon,20094(4):239–248. |
| [20] | Xiaodong Ma;Takeshi Yoshikawa;Kazuki Morita.Si growth by directional solidification of Si-Sn alloys to produce solar-grade Si[J].Journal of Crystal Growth,2013Aug.15(Aug.15):192-196. |
| [21] | K. Kinoshita;Y. Arai;Y. Inatomi;T. Tsukada;S. Adachi;H. Miyata;R. Tanaka;J. Yoshikawa;T. Kihara;H. Tomioka;H. Shibayama;Y. Kubota;Y. Warashina;Y. Sasaki;Y. Ishizuka;Y. Harada;S. Wada;C. Harada;T. Ito;M. Takayanagi;S. Yoda.Growth of a Si_(0.50)Ge_(0.50) crystal by the traveling liquidus-zone (TLZ) method in microgravity[J].Journal of Crystal Growth,2014Feb.15(Feb.15):12-16. |
| [22] | K. Kinoshita;H. Miyata;R. Tanaka;T. Ueda;Y. Arai;S. Yoda.Si_(0.5)Ge_(0.5) bulk single crystals with uniform composition[J].Journal of Crystal Growth,20121(1):50-54. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%