采用混合氧化物工艺经850℃、4h烧结制备了铈镧复合氧化物掺杂的ZnVCrO基压敏陶瓷,综合应用XRD、SEM、EDS和伏安电学特性测试等方法研究了铈镧复合氧化物掺杂在0％～0.6％(质量分数)范围内对显微结构和压敏性能的影响.结果显示,所有样品以ZnO为主晶相,以Zn3 (VO4)2、ZnCr2O4为第二相,含掺杂样品中还形成Ce(La) VO4固溶体,其含量随掺杂量增加而升高.铈镧复合氧化物对烧结影响不大,但其含量大于等于0.4％(质量分数)时可大幅提高ZnVO基压敏陶瓷显微组织的均匀性.0.4％(质量分数)铈镧复合氧化物掺杂样品压敏性能最优:非线性系数为24.7,压敏电压为1029 V/mm,漏电流为92 μA/cm2.
ZnVCrO based ceramics with 0％-0.6％ Ce-La oxide composite were synthesized by traditional mixing oxide procedure,sintering at 850 ℃ for 4 hours.XRD,SEM,EDS and V-Ⅰ test were used to investigate the dopant effect on the microstructure and varistor properties of the obtained ceramics.The results showed Zn3 (VO4)2,ZnCr2O4 were the secondary crystalline phases within the ceramics in addition to ZnO primary phase.Ce(La)VO4 solid solution was an additional secondary crystalline phase in the ceramics with Ce-La oxide composite and the amount of additional secondary phase increased with the further addition of the dopant.Composite dopant of more than 0.4wt％ could greatly improve the microstructural homogeneity of ZnVCrO based ceramics,and the variation of its content showed no major influenceon sintering.The ceramic with 0.4wt％ Ce-La composite has the optimum varistor properties:nonlinear coefficient was 24.7,breakdown field was 1 029 V/mm,leak current density was 92 μA/cm2.
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