研究了化学水浴法制备的CdS薄膜微观结构与其带隙宽度的关系.采用台阶仪、X射线衍射仪(XRD)、透射电子显微镜(TEM)、分光光度计、扫描电子显微镜(SEM)、原子力显微镜(AFM)和能谱仪(EDS)等对不同沉积温度下制备的CdS薄膜的生长速率、晶体结构、光学性质、表面形貌和薄膜组分及其相互间关系进行了研究.随着沉积温度升高,薄膜沉积速率变快,H(002)晶而间距相应增加,带隙宽度逐渐下降.同时CdS薄膜的表面变得更为光滑.结合能谱分析发现,随着沉积温度上升,CdS薄膜的中硫的含量相应增加,薄膜中Cd/S原子比例更加接近于1∶1.CdS薄膜品格常数的增加造成了带隙宽度的下降.而品格常数的变化则归因于沉积温度的变化对薄膜中硫的含量的影响.沉积温度上升会促进OH-离子与硫脲的反应,加速S2-离子的释放,从而导致溶液中S2-离子浓度上升.在CdS薄膜的生长过程中会有更多硫进入到薄膜中,使得薄膜中的硫空位减少而硫空位的减少会使薄膜晶体结构更加完整,导致品格常数上升,更加接近于体材料的晶格常数.
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