用射频磁控溅射Ga2O3陶瓷靶材和直流磁控溅射ITO靶材在石英玻璃衬底制备Ga2 O3 /ITO周期多层膜.样品在300～800℃真空退火1小时,研究退火温度对薄膜光学和电学性能的影响.400℃退火的Ga2O3/ITO周期多层膜面电阻和电阻率低至68.76Ω/□和3.47×10-3Ω·cm,载流子浓度和霍尔迁移率高达1.30×1020 cm-3和14.02cm2 V-1 s-1.退火温度超过500℃后,Ga2O3膜层和ITO膜层之间开始相互扩散,薄膜结晶质量和导电性变差.所有退火薄膜在紫外-可见光范围的平均光学透过率高于83％,光学带边吸收随退火温度增加发生蓝移,光学带隙从4.59eV增加到4.78eV.
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