固相烧结SiC(SSiC)陶瓷大多数用于结构陶瓷材料,用于电子和电阻元器件的研究很少.实验以添加不同C含量的致密SSiC陶瓷材料为研究对象,研究了添加不同C含量SSiC陶瓷的伏安特性、电阻率与电流密度的变化关系及电阻率与温度的变化关系.研究结果表明:SSiC陶瓷表现出明显的非线性电学特性,其电阻率随着电流的增大而降低;对于添加3wt％C含量的SSiC陶瓷,当电场强度超过15.8 V/mm时,晶界势垒被击穿;对于添加6wt％C含量的SSiC陶瓷,当电场强度超过70.7 V/mm时,晶界势垒被击穿,它们的电阻率将为晶粒所控制,电阻率较小;同时在电场强度1 V/mm条件下,SSiC陶瓷电阻率随着温度的升高而降低,表现出很好热敏特性,从常温的106 Ω·cm变化为400℃的5 Ω·cm左右.
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