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目的：探究TiO2薄膜结晶性与工艺参数之间的规律。方法采用直流反应磁控溅射法,改变工艺条件(样品位置、溅射功率、氧气分压、是否开转架、沉积温度以及是否退火),在普通载玻片基底上制备TiO2薄膜,并利用XRD和SEM对不同工艺参数下获得的TiO2薄膜进行分析。结果在靶基距固定的情况下,仅改变样品悬挂的上下位置时,薄膜的结晶性差别不大。随着溅射功率在一定范围内增大,薄膜的结晶性越来越好(趋于锐钛矿晶型)。与氧气分压为5%时相比,10%时的薄膜结晶性更优；与开转架时相比,不开转架时薄膜的结晶性更优。沉积温度在300,350℃两者之间变化时,对薄膜的结晶性影响不大。退火后薄膜的结晶性优于未退火薄膜。结论样品位置、沉积温度对于TiO2薄膜的结晶性影响不大；氧气分压、是否开转架对TiO2薄膜的结晶性有一定影响；溅射功率、退火与否对TiO2薄膜的结晶性影响较大,并且退火后出现金红石相。

ABSTRACT:Objective To explore the pattern between the crystallization of TiO2 thin films and the process parameters. Methods The process conditions ( the position of the sample, sputtering power, oxygen partial pressure, the bogie, deposition temperature and annealing) were modified by the DC reactive magnetron sputtering method to prepare TiO2 thin films on the common slide glass substrate. TiO2 thin films under different process parameters were analyzed by XRD and SEM. Results In the case of fixed target-substrate distance, simply changing the sample suspension position had little influence on thin-film crystalline. As the sputtering power increased within a certain range, the film crystalline became better and better ( tending to anatase crystal) . Crystalline of the thin film whose oxygen partial pressure was 10% was better than that whose pressure was 5%. The thin film crystalline was superi-or when the turntable was not opened, compared to when the turntable was opened. Deposition temperature ( shifting between 300℃ and 350 ℃) made no difference to thin film crystalline. Crystalline of thin film annealed was superior to that not annealed. Conclusion Sample suspension position and deposition temperature have little effect on the crystalline property of TiO2 films. Oxy-gen partial pressure and opening of turntable have some impacts on the crystalline property of TiO2 films. Sputtering power and an-nealing have a greater influence on the crystallization of TiO2 thin film, the rutile crystal diffraction peaks appear after being an-nealed.