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目的：研究硅片经雾化施液抛光技术加工后存在的位错缺陷。方法应用化学腐蚀法、光学方法分析硅片不同部位的位错腐蚀形貌、位错密度及其分布,通过单因素实验研究雾化参数对位错形貌和位错密度的影响规律。在相同的工艺参数下,和传统抛光进行对比实验。结果雾化抛光硅片的平均位错密度为1.2×104/cm2,边沿处的位错密度小于其他区域。在相同的工艺参数下,雾化施液CMP的抛光液消耗量约为传统CMP的1/10,但硅片的位错腐蚀形貌和位错密度明显好于传统抛光,且蚀坑分布均匀分散,没有出现位错排等严重缺陷。通过增大雾化器的出雾量能有效改善硅片表层的位错缺陷。结论相对于传统抛光,雾化施液抛光技术能更加高效地去除硅片的位错缺陷。

ABSTRACT:Objective To study the dislocation defect of silicon wafer which was polished by ultrasonic atomization chemical me-chanical polishing ( CMP) . Methods The chemical etching method and optics method were used to analyze the morphology, densi-ty, and distribution of the dislocation etch pits. Besides, the influence of atomization quantity on the morphology and density of dis-location was studied by single factor experiment. Then comparative experiments were conducted with traditional CMP under the same conditions. Results The average dislocation density of the polished silicon wafer was about 1. 2×104/cm2 and the dislocation density in edge area was lower than other areas. Besides, the dislocation morphology and dislocation density of silicon wafer pol-ished by ultrasonic atomization CMP were obviously better than those treated by traditional CMP under the same conditions while thepolishing liquid consumption was about one tenth of traditional CMP. The dislocation etch pits distributed evenly and there were no serious flaws such as dislocation piles and so on. In addition to that, the dislocation defect could be effectively improved by increas-ing the quantity of atomization. Conclusion Ultrasonic atomization CMP removed the dislocation defect of silicon wafer more effi-ciently than traditional CMP.